RESUMO
Materials displaying the remarkable combination of high electrical conductivity and optical transparency already from the basis of many important technological applications, including flat panel displays, solar energy capture and other opto-electronic devices. Here we present the basic materials physics of these important materials centred on the nature of the doping process to generate n-type conductivity in transparent conducting oxides, the associated transition to the metallic (conducting) state and the detailed properties of the degenerate itinerant electron gas. The aim is to fully understand the origins of the basic performance limits of known materials and to set the scene for new or improved materials which will breach those limits for new-generation transparent conducting materials, either oxides, or beyond oxides.
RESUMO
A comparison is made of the techniques of secondary ion mass spectrometry (SIMS) and resonance ionization mass spectrometry (RIMS) for the detection of the neuro-toxic element aluminium in cortical tissue. Experiments were performed using a reflectron-type time-of-flight mass spectrometer (TOFMS) in conjunction with an Ar+ source for target sputtering and a pulsed tuneable dye laser system for resonance ionization. It is shown how isobaric interference of species such as CNH and C2H3 in the case of aluminium greatly affect the quantitative accuracy and the detection limit of aluminium in biological samples when analysed using SIMS. In contrast the use of RIMS virtually eliminates this problem, so allowing easier quantification and much lower detection limits to be achieved. Detection limits of approximately 3 ppm for aluminium in brain tissue homogenates were achieved using RIMS, with a spatial resolution of less than 100 microns.
