Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering.

In this study we analyzed the structure and light-sensing properties of as-deposited vanadium oxide thin films, prepared by RF sputtering in different Ar:O2 flow rate conditions, at low temperature (e.g., 65 °C). X-ray diffraction (XRD), Scanning Electron Microscopy (SEM-EDX), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to analyze the film microstructure, composition and the oxidation states of vanadium ions. The SEM micrographs evidence VxOy films with smooth surfaces, whereas the XRD patterns show their amorphous structure. Raman spectra indicate an increased structural disorder in the films deposited in Ar:O2 flow comparatively with those deposited solely in Ar flow. The XPS data suggest the modification of the oxidation state from V4+ to V5+, thus proving the formation of the V2O5 phase when increasing the oxygen content, which further affects the films' optical properties. We observed a good stability of the photogenerated current in Si/SiO2/VxOy/TiN heterostructures upon excitation with pulses of UV (360 nm), VIS (white light) and NIR (860 nm) light. The responsivity, detectivity and linear dynamic range parameters increase with the O/V ratio in the VxOy films, reaching comparable values with photodetectors based on crystalline V2O5 or VO2.

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation.

Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1m pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.

Insights into Electron Transport in a Ferroelectric Tunnel Junction.

The success of a ferroelectric tunnel junction (FTJ) depends on the asymmetry of electron tunneling as given by the tunneling electroresistance (TER) effect. This characteristic is mainly assessed considering three transport mechanisms: direct tunneling, thermionic emission, and Fowler-Nordheim tunneling. Here, by analyzing the effect of temperature on TER, we show that taking into account only these mechanisms may not be enough in order to fully characterize the performance of FTJ devices. We approach the electron tunneling in FTJ with the non-equilibrium Green function (NEGF) method, which is able to overcome the limitations affecting the three mechanisms mentioned above. We bring evidence that the performance of FTJs is also affected by temperature-in a non-trivial way-via resonance (Gamow-Siegert) states, which are present in the electron transmission probability and are usually situated above the barrier. Although the NEGF technique does not provide direct access to the wavefunctions, we show that, for single-band transport, one can find the wavefunction at any given energy and in particular at resonant energies in the system.

Iodine Migration and Degradation of Perovskite Solar Cells Enhanced by Metallic Electrodes.

We monitored the evolution in time of pinhole-free structures based on FTO/TiO2/CH3NH3PbI2.6Cl0.4 layers, with and without spiro-OMeTAD and counter electrodes (Ag, Mo/Ag, and Au), aged at 24 °C in a dark nitrogen atmosphere. In the absence of electrodes, no degradation occurs. While devices with Au show only a 10% drop in power conversion efficiency, remaining stable after a further overheating at 70 °C, >90% is lost when using Ag, with the process being slower for Mo/Ag. We demonstrate that iodine is dislocated by the electric field between the electrodes, and this is an intrinsic cause for electromigration of I- from the perovskite until it reaches the anode. The iodine exhaustion in the perovskite layer is produced when using Ag electrodes, and AgI is formed. We hypothesize that in the presence of Au the iodine migration is limited due to the buildup of I- negative space charge accumulated at the perovskite-OMeTAD interface.

Origin of the X-ray magnetic circular dichroism at the L-edges of the rare-earths in RxR(1-x)'Al2 systems.

An X-ray magnetic circular dichroism (XMCD) study performed at the rare-earth L(2,3)-edges in the R(x)R(1-x)'Al(2) compounds is presented. It is shown that both R and R' atoms contribute to the XMCD recorded at the L-edges of the selected rare-earth, either R or R'. The amplitude of the XMCD signal is not directly correlated to the magnetization or to the value of the individual (R, R') magnetic moments, but it is related to the molecular field acting on the rare-earth tuned in the photoabsorption process. This result closes a longstanding study of the origin of the XMCD at the L-edge of the rare-earths in multi-component systems, allowing a full understanding of the exact nature of these signals.