Deterministic and electrically tunable bright single-photon source.

The scalability of a quantum network based on semiconductor quantum dots lies in the possibility of having an electrical control of the quantum dot state as well as controlling its spontaneous emission. The technological challenge is then to define electrical contacts on photonic microstructures optimally coupled to a single quantum emitter. Here we present a novel photonic structure and a technology allowing the deterministic implementation of electrical control for a quantum dot in a microcavity. The device consists of a micropillar connected to a planar cavity through one-dimensional wires; confined optical modes are evidenced with quality factors as high as 33,000. We develop an advanced in-situ lithography technique and demonstrate the deterministic spatial and spectral coupling of a single quantum dot to the connected pillar cavity. Combining this cavity design and technology with a diode structure, we demonstrate a deterministic and electrically tunable single-photon source with an extraction efficiency of around 53 ± 9%.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Planar photonic crystal cavities with far-field optimization for high coupling efficiency and quality factor.

Different types of planar photonic crystal cavities aimed at optimizing the far-field emission pattern are designed and experimentally assessed by resonant scattering measurements. We systematically investigate the interplay between achieving the highest possible quality (Q) factor and maximizing the in- and out-coupling efficiency into a narrow emission cone. Cavities operate at telecommunications wavelengths, i.e. around approximately 1.55 microm, and are realized in silicon membranes. A strong modification of the far-field emission pattern, and therefore a substantial increase of the coupling efficiency in the vertical direction, is obtained by properly modifying the holes around L3, L5 and L7 type PhC cavities, as we predict theoretically and show experimentally. An optimal compromise yielding simultaneously a high Q-factor and a large coupling to the fundamental cavity mode is found for a L7-type cavity with a measured Q congruent with 62000, whose resonant scattering efficiency is improved by about two orders of magnitude with respect to the unmodified structure. These results are especially useful for prospective applications in light emitting devices, such as nano-lasers or single-photon sources, in which vertical in- and out-coupling of the electromagnetic field is necessarily required.