Phase noise of an electro-optic terahertz comb.

Photonic millimeter wave and terahertz frequency generation and detection benefit from a large tunability of several octaves as opposed to electronic frequency generation and multiplication. However, reaching multiple 100 GHz continuous tuning range while simultaneously featuring a 3-dB linewidth in the Hz range and low phase noise is still very challenging. We present an electro-optical comb driving a photomixer with potential usability as an extension module based on side-band generation by an electro-optical phase modulator. This enables a Hz-level 3-dB linewidth from microwaves to terahertz frequencies. We discuss the working principle of the mentioned electro-optical comb, characterize the phase noise of the optical subsystem up to frequencies of 40 GHz where electronic phase noise analyzers are available and draw conclusions on the phase noise at higher frequencies in the THz domain.

Mapping the slow and fast photoresponse of field-effect transistors to terahertz and infrared radiation.

Field-effect transistors are capable of detecting electromagnetic radiation from less than 100 GHz up to very high frequencies reaching well into the infrared spectral range. Here, we report on frequency coverage of up to 30THz, thus reaching the technologically important frequency regime of CO2 lasers, using GaAs/AlGaAs high-electron-mobility transistors. A detailed study of the speed and polarization dependence of the responsivity allows us to identify a cross over of the dominant detection mechanism from ultrafast non-quasistatic rectification at low Terahertz frequencies to slow rectification based on a combination of the Seebeck and bolometric effects at high frequencies, occurring at about the boundary between the Terahertz frequency range and the infrared at 10THz.

Estimating Thoracic Movement with High-Sampling Rate THz Technology.

We use a high-sampling rate terahertz (THz) homodyne spectroscopy system to estimate thoracic movement from healthy subjects performing breathing at different frequencies. The THz system provides both the amplitude and phase of the THz wave. From the raw phase information, a motion signal is estimated. An electrocardiogram (ECG) signal is recorded with a polar chest strap to obtain ECG-derived respiration information. While the ECG showed sub-optimal performance for the purpose and only provided usable information for some subjects, the signal derived from the THz system showed good agreement with the measurement protocol. Over all the subjects, a root mean square estimation error of 1.40 BPM is obtained.

Characterisation of multi-layered structures using a vector-based gradient descent algorithm at terahertz frequencies.

Material characterisation and imaging applications using terahertz radiation have gained interest in the past few years due to their enormous potential for industrial applications. The availability of fast terahertz spectrometers or multi-pixel terahertz cameras has accelerated research in this domain. In this work, we present a novel vector-based implementation of the gradient descent algorithm to fit the measured transmission and reflection coefficients of multilayered objects to a scattering parameter-based model, without requiring any analytical formulation of the error function. We thereby extract thicknesses and refractive indices of the layers within a maximum 2% error margin. Using the precise thickness estimates, we further image a 50 nm-thick Siemens star deposited on a silicon substrate using wavelengths larger than 300 µm. The vector-based algorithm heuristically finds the error minimum where the optimisation problem cannot be analytically formulated, which can be utilised also for applications outside the terahertz domain.

State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz.

We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from 1.9 to 5.56 THz. We used two measurement techniques in order to discriminate the sub-ns-scale (via a 20 GHz oscilloscope) and the ms-scale (using the lock-in technique) responsivity. While the lock-in measurements basically contain all rectification effects, the sub-ns-scale detection with the oscilloscope is not sensitive to slow bolometric effects caused by changes of the IV characteristic due to temperature. The noise equivalent power (NEP) is 10 pW/Hz in the frequency range from 0.2 to 0.6 THz and 17 pW/Hz at 1.2 THz and increases to 0.9 µW/Hz at 5.56 THz, which is at the state of the art for room temperature zero-bias Schottky diode-based THz detectors with non-resonant antennas. The voltage and current responsivity of ∼500 kV/W and ∼100 mA/W, respectively, is demonstrated over a frequency range of 0.2 to 1.2 THz with the table-top system.

Visualizing nanometric structures with sub-millimeter waves.

The resolution along the propagation direction of far field imagers can be much smaller than the wavelength by exploiting coherent interference phenomena. We demonstrate a height profile precision as low as 31 nm using wavelengths between 0.375 mm and 0.5 mm (corresponding to 0.6 THz-0.8 THz) by evaluating the Fabry-Pérot oscillations within surface-structured samples. We prove the extreme precision by visualizing structures with a height of only 49 nm, corresponding to 1:7500 to 1:10000 vacuum wavelengths, a height difference usually only accessible to near field measurement techniques at this wavelength range. At the same time, the approach can determine thicknesses in the centimeter range, surpassing the dynamic range of any near field measurement system by orders of magnitude. The measurement technique combined with a Hilbert-transform approach yields the (optical) thickness extracted from the relative phase without any extraordinary wavelength stabilization.

Wavelength conversion through plasmon-coupled surface states.

Surface states generally degrade semiconductor device performance by raising the charge injection barrier height, introducing localized trap states, inducing surface leakage current, and altering the electric potential. We show that the giant built-in electric field created by the surface states can be harnessed to enable passive wavelength conversion without utilizing any nonlinear optical phenomena. Photo-excited surface plasmons are coupled to the surface states to generate an electron gas, which is routed to a nanoantenna array through the giant electric field created by the surface states. The induced current on the nanoantennas, which contains mixing product of different optical frequency components, generates radiation at the beat frequencies of the incident photons. We utilize the functionalities of plasmon-coupled surface states to demonstrate passive wavelength conversion of nanojoule optical pulses at a 1550 nm center wavelength to terahertz regime with efficiencies that exceed nonlinear optical methods by 4-orders of magnitude.

Pulsed free space two-port photonic vector network analyzer with up to 2 THz bandwidth.

We demonstrate a free space two-port photonic vector network analyzer capable of measuring the scattering parameters of devices and materials in the terahertz range with a frequency coverage of 0.2 - 2 THz in a single system. It is based on photoconductive terahertz sources and detectors driven by a telecom-wavelength femtosecond laser. Being able to cover a bandwidth of one order of magnitude, the system is capable of performing S-parameter measurements deep into the terahertz range, beyond frequencies reachable by their electronic counterparts. We demonstrate high performance at three application examples, namely S-parameter measurements of a split ring resonator array and a distributed Bragg reflector, as well as material parameter extraction of several materials.

ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW.

Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica "TeraFlash pro" system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 µW at a laser power of 42 mW and a bias of 200 V.

An efficient Terahertz rectifier on the graphene/SiC materials platform.

We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.1 A/W. Remarkably, the voltage dependence of the THz responsivity displays no deviations from DC responsivity, which encourages using this transparent device for exploring the high frequency limits of Schottky rectification in the optical regime. The performance of the detector is demonstrated by resolving sharp spectroscopic features of ethanol and acetone in a THz transmission experiment.

Erratum: Mendez Aller, M. et al. Error Sources and Distinctness of Materials Parameters Obtained by THz-Time Domain Spectroscopy Using an Example of Oxidized Engine Oil. Sensors. Sensors 2018, 18, 2087.

The authors wish to correct the affiliation of co-author Ali Mazin Abdul-Munaim, due to name changes of which he was unaware during his leave of absence. [...].

Error Sources and Distinctness of Materials Parameters Obtained by THz-Time Domain Spectroscopy Using an Example of Oxidized Engine Oil.

Gasoline engine oil (SAE 5W-20) was subjected to thermal oxidization (TO) for four periods of time (0 h, 48 h, 96 h and 144 h) and exposed to THz-time domain spectroscopy (TDS) measurement. Error contributions from various error sources, such as repeatability errors, assembly errors of the probe volume and errors caused by the TDS system were evaluated with respect to discernibility and significance of measurement results. The most significant error source was due to modifications of the TDS setup, causing errors in the range of 0.13% of the refractive index for samples with a refractive index around 1.467 and a probe volume length between 5 and 15 mm at 1 THz. The absorption coefficient error was in the range of 8.49% for an absorption around 0.6 cm−1. While the average of measurements taken with different setup configurations did not yield significant differences for different TO times, a single, fixed setup would be able to discern all investigated oil species across the entire frequency range of 0.5⁻2.5 THz. The absorption coefficient measurement showed greater discernibility than the measurement of the refractive index.

Enhancing the performance of THz quasi time-domain spectroscopy systems by low duty cycle laser operation.

We investigate the performance of terahertz (THz) quasi time-domain systems (QTDS) driven by electrically pulsed multi-mode laser diodes operating at 659 nm. We show that at the same average output power, a reduced duty cycle considerably increases the obtained bandwidth. In the presented experiment, the high frequency performance is improved by 50 dB/THz. We identify the broadening of the optical spectrum caused by pulsing the laser source to be responsible for the increased THz bandwidth.

Widely tunable telecom MEMS-VCSEL for terahertz photomixing.

We report frequency-tunable terahertz (THz) generation with a photomixer driven by an ultra-broadband tunable micro-electro-mechanical system vertical-cavity surface-emitting laser (MEMS-VCSEL) and a fixed-wavelength VCSEL, as well as a tunable MEMS-VCSEL mixed with a distributed feedback (DFB) diode. A total frequency span of 3.4 THz is covered in direct detection mode and 3.23 THz in the homodyne mode. The tuning range is solely limited by the dynamic range of the photomixers and the Schottky diode/photoconductor used in the experiment.

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors.

We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs, the spectral coverage of the GaAs-based detectors is more than two orders of magnitude, covering the entire THz range (100 GHz - 10 THz). The temporal resolution of the robust devices is yet limited by the 30 GHz oscilloscope used for read out. The responsivity roll-off towards higher frequencies is weaker than expected from an RC-roll-off model. Terahertz pulses with peak powers of up to 65kW have been recorded without damaging the devices.

Plasmonics enhanced photomixing for generating quasi-continuous-wave frequency-tunable terahertz radiation.

We experimentally demonstrate an order of magnitude enhancement in the quasi-continuous-wave radiated power from a photomixer with plasmonic contact electrodes in comparison with an analogous conventional photomixer without plasmonic contact electrodes in the 0.25-2.5 THz frequency range when pumped at an optical wavelength of 1550 nm. The significant efficiency enhancement results from the unique capability of the plasmonic contact electrodes to reduce the average transport path of photocarriers to the device contact electrodes, increasing the ultrafast photocurrent that drives the terahertz antenna.

Self-assembled ErSb nanostructures with optical applications in infrared and terahertz.

Plasmonic effects have proven to be very efficient in coupling light to structures much smaller than its wavelength. Efficient coupling is particularly important for the infrared or terahertz (λ ∼ 0.3 mm) region where semiconductor structures and devices may be orders of magnitude smaller than the wavelength and this can be achieved through nanostructures that have a desired plasmonic response. We report and demonstrate a self-assembly method of embedding controllable semimetallic nanostructures in a semiconducting matrix in a ErSb/GaSb material system grown by molecular beam epitaxy. The plasmonic properties of the ErSb/GaSb are characterized and quantified by three polarization-resolved spectroscopy techniques, spanning more than 3 orders of magnitude in frequency from 100 GHz up to 300 THz. Surface plasmons cause the semimetallic nanostructures to resonate near 100 THz (3 µm wavelength), indicating the semimetal as a potential infrared plasmonic material. The highly conductive ErSb nanowires polarize electromagnetic radiation in a broad range from 0.2 up to ∼100 THz, providing a new platform for electromagnetics in the infrared and terahertz frequency ranges.