Ultralow 0.034†dB/m loss wafer-scale integrated photonics realizing 720 million Q and 380 µW threshold Brillouin lasing.

We demonstrate 0.034 dB/m loss waveguides in a 200-mm wafer-scale, silicon nitride (Si3N4) CMOS-foundry-compatible integration platform. We fabricate resonators that measure up to a 720 million intrinsic Q resonator at 1615 nm wavelength with a 258 kHz intrinsic linewidth. This resonator is used to realize a Brillouin laser with an energy-efficient 380 µW threshold power. The performance is achieved by reducing scattering losses through a combination of single-mode TM waveguide design and an etched blanket-layer low-pressure chemical vapor deposition (LPCVD) 80 nm Si3N4 waveguide core combined with thermal oxide lower and tetraethoxysilane plasma-enhanced chemical vapor deposition (TEOS-PECVD) upper oxide cladding. This level of performance will enable photon preservation and energy-efficient generation of the spectrally pure light needed for photonic integration of a wide range of future precision scientific applications, including quantum, precision metrology, and optical atomic clocks.

Broadband, ultrahigh efficiency fiber-to-chip coupling via multilayer nanophotonics.

We design, fabricate, and characterize a multilayer nanophotonic structure that couples light from standard optical fiber to an integrated photonics chip with unprecedented efficiency. The structure comprises a multilayer waveguide array tapering into a single waveguide supporting only fundamental TE- and TM-like modes. Measurements reveal a record-setting fiber-to-chip coupling efficiency of ${98.3}\% \;{\pm}\;{0.3}\%$ per facet at a 1575 nm wavelength that remains greater than ${92.8}\% \;{\pm}\;{0.4}\%$ across the 1550-1600 nm wavelength range. This approach is tailorable to any material platform, fiber type, or operating wavelength and represents a significant step forward for the accessibility of integrated photonics.

422 Million intrinsic quality factor planar integrated all-waveguide resonator with sub-MHz linewidth.

High quality-factor (Q) optical resonators are a key component for ultra-narrow linewidth lasers, frequency stabilization, precision spectroscopy and quantum applications. Integration in a photonic waveguide platform is key to reducing cost, size, power and sensitivity to environmental disturbances. However, to date, the Q of all-waveguide resonators has been relegated to below 260 Million. Here, we report a Si3N4 resonator with 422 Million intrinsic and 3.4 Billion absorption-limited Qs. The resonator has 453 kHz intrinsic, 906 kHz loaded, and 57 kHz absorption-limited linewidths and the corresponding 0.060 dB m-1 loss is the lowest reported to date for waveguides with deposited oxide upper cladding. These results are achieved through a careful reduction of scattering and absorption losses that we simulate, quantify and correlate to measurements. This advancement in waveguide resonator technology paves the way to all-waveguide Billion Q cavities for applications including nonlinear optics, atomic clocks, quantum photonics and high-capacity fiber communications.

Electronic Metamaterials with Tunable Second-order Optical Nonlinearities.

The ability to engineer metamaterials with tunable nonlinear optical properties is crucial for nonlinear optics. Traditionally, metals have been employed to enhance nonlinear optical interactions through field localization. Here, inspired by the electronic properties of materials, we introduce and demonstrate experimentally an asymmetric metal-semiconductor-metal (MSM) metamaterial that exhibits a large and electronically tunable effective second-order optical susceptibility (χ(2)). The induced χ(2) originates from the interaction between the third-order optical susceptibility of the semiconductor (χ(3)) with the engineered internal electric field resulting from the two metals possessing dissimilar work function at its interfaces. We demonstrate a five times larger second-harmonic intensity from the MSM metamaterial, compared to contributions from its constituents with electrically tunable nonlinear coefficient ranging from 2.8 to 15.6 pm/V. Spatial patterning of one of the metals on the semiconductor demonstrates tunable nonlinear diffraction, paving the way for all-optical spatial signal processing with space-invariant and -variant nonlinear impulse response.

Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities.

We present experimental results on the observation of a bulk second-order nonlinear susceptibility, derived from both free-space and integrated measurements, in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely χ(2) yyy = 0.14 ± 0.08 pm/V and χ(2) xxy = 0.30 ± 0.18 pm/V. Additionally, we show how the second-harmonic signal may be tuned through the application of bias voltages across silicon nitride. The material properties measured here are anticipated to allow for the realization of new nanophotonic devices in CMOS-compatible silicon nitride waveguides, adding to their viability for telecommunication, data communication, and optical signal processing applications.

Effect of dielectric claddings on the electro-optic behavior of silicon waveguides.

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide and, by measuring their electro-optic behavior, we characterize the capacitively induced free-carrier effect. By comparing our results with simulations, we confirm that the observed voltage dependences of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguides and show how strongly these effects depend on the cladding material that comes into contact with the waveguide. Waveguide loss is additionally found to have a high sensitivity to the applied voltage, suggesting that these effects may find use in applications that require low- or high-loss propagation. These phenomena, which are present in all semiconductor waveguides, may be incorporated into more complex waveguide designs in the future to create high-efficiency electro-optic modulators and wavemixers.

Silicon nanoridge array waveguides for nonlinear and sensing applications.

We fabricate and characterize waveguides composed of closely spaced and longitudinally oriented silicon ridges etched into silicon-on-insulator wafers. Through both guided mode and bulk measurements, we demonstrate that the patterning of silicon waveguides on such a deeply subwavelength scale is desirable for nonlinear and sensing applications alike. The proposed waveguide geometry simultaneously exhibits comparable propagation losses to similar schemes proposed in literature, an enhanced effective third-order nonlinear susceptibility, and high sensitivity to perturbations in its environment.

Multichannel Bragg gratings in silicon waveguides with asymmetric sidewall modulation.

We demonstrate a new type of on-chip Bragg grating designed to possess multiple stopbands at predetermined wavelengths. By employing sidewall modulation to control the full width half-maximum and extinction ratio, and through the incorporation of multiple spatial frequencies into the gratings' periodicities, we show that Bragg reflection can be achieved at particular wavelengths of interest without compromising spectrally distinct characteristics. Multiple device geometries are theoretically studied using the finite-difference time-domain method, and the results these analyses yield are shown to be in good agreement with experimental data. We additionally demonstrate how such devices may be employed to fabricate so-called dual-mode Bragg gratings, which are capable of reflecting both TE- and TM-like modes at a single wavelength of operation.

Tensor of the second-order nonlinear susceptibility in asymmetrically strained silicon waveguides: analysis and experimental validation.

We theoretically consider the existence of multiple nonzero components of the second-order nonlinear susceptibility tensor, χ(2), generated via strain-induced symmetry breaking in crystalline silicon. We determine that, in addition to the previously reported χ(xxy)(2) component, the χ(yyy)(2) component also becomes nonzero based on the remaining symmetry present in the strained material. In order to characterize these two nonlinearities, we fabricate Fabry-Perot waveguide resonators on 250 nm thick silicon-on-insulator wafers clad with 180 nm of compressively stressed (-1.275 GPa) silicon nitride. We measure the shifts in these devices' modal effective indices in response to several bias electric fields and calculate the χ(eff,xxy)(2) and χ(eff,yyy)(2) nonlinear susceptibility tensor elements induced by the breaking of the guiding material's inversion symmetry. Through the incorporation of finite element simulations encompassing the theoretical distribution of strain, the applied bias field, and the optical modes supported by the waveguide geometry, we extract two phenomenological scaling coefficients which relate the induced optical nonlinearities to the local strain gradient.

Invariance of optimal composite waveguide geometries with respect to permittivity of the metal cladding.

We optimize the threshold gain for cylindrical composite (semiconductor-dielectric-metal) waveguides (WGs) with various metal claddings. We show that the optimal dielectric width is invariant with respect to the imaginary part of the permittivity of the metal, εM'', and weakly dependent on the real part, εM'. To explain this behavior, we compare optimal geometries of WGs with different semiconductor permittivities, εG'. Results from these comparisons indicate that the optimal effective index parallels the optimal threshold gain in its relation to εM. We use our results to heuristically propose an analytical expression for the optimal threshold gain that approximates the numerical solution to within a factor of two over the range of explored εG'. Finally, we use data from our optimizations to obtain approximate analytical expressions for the optimal dielectric width and threshold gain as functions of the total WG radius.