Octave-spanning coherent perfect absorption in a thin silicon film.

Although optical absorption is an intrinsic materials property, it can be manipulated through structural modification. Coherent perfect absorption increases absorption to 100% interferometrically but is typically realized only over narrow bandwidths using two laser beams with fixed phase relationship. We show that engineering a thin film's photonic environment severs the link between the effective absorption of the film and its intrinsic absorption while eliminating, in principle, bandwidth restrictions. Employing thin aperiodic dielectric mirrors, we demonstrate coherent perfect absorption in a 2 µm thick film of polycrystalline silicon using a single incoherent beam of light at all the resonances across a spectrally flat, octave-spanning near-infrared spectrum, ≈800-1600 nm. Critically, these mirrors have wavelength-dependent reflectivity devised to counterbalance the decline in silicon's intrinsic absorption at long wavelengths.

Analytical model for coherent perfect absorption in one-dimensional photonic structures.

Coherent perfect absorption (CPA) is the phenomenon where a linear system with low intrinsic loss strongly absorbs two incident beams but only weakly absorbs either beam when incident separately. We present an analytical model that captures the relevant physics of CPA in one-dimensional photonic structures. This model elucidates an absorption-mediated interference effect that underlies CPA-an effect that is normally forbidden in Hermitian systems but is allowed when conservation of energy is violated due to the inclusion of loss. By studying a planar cavity model, we identify the optimal mirror reflectivity to guarantee CPA in the cavity at resonances extending in principle over any desired bandwidth. As a concrete example, we design a resonator that produces CPA in a 1-µm-thick layer of silicon over a 200-nm bandwidth in the near-infrared.

Spatially mapping charge carrier density and defects in organic electronics using modulation-amplified reflectance spectroscopy.

Charge-modulated optical spectroscopy is used to achieve dynamic two-dimensional mapping of the charge-carrier distribution in poly(3-hexylthiophene) thin-film transistors. The resulting in-channel distributions evolve from uniformly symmetric to asymmetrically saturated as the devices are increasingly biased. Furthermore, physical, chemical, and electrical defects are spatially resolved in cases where their presence is not obvious from the device performance.