Five Low-Noise Stable Oscillators Referenced to the Same Multimode AlN/Si MEMS Resonator.

We report on the first experimental demonstration of five self-sustaining feedback oscillators referenced to a single multimode resonator, using piezoelectric aluminum nitride on silicon (AlN/Si) microelectromechanical systems (MEMS) technology. Integrated piezoelectric transduction enables efficient readout of five resonance modes of the same AlN/Si MEMS resonator, at 10, 30, 65, 95, and 233 MHz with quality ( Q ) factors of 18 600, 4350, 4230, 2630, and 2138, respectively, at room temperature. Five stable self-sustaining oscillators are built, each referenced to one of these high- Q modes, and their mode-dependent phase noise and frequency stability (Allan deviation) are measured and analyzed. The 10, 30, 65, 95, and 233 MHz oscillators exhibit low phase noise of -116, -100, -105, -106, and -92 dBc/Hz at 1 kHz offset frequency, respectively. The 65 MHz oscillator yields the Allan deviation of 4×10-9 and 2×10-7 at 1 and 1000 s averaging time, respectively. The 10 MHz oscillator's low phase noise holds strong promise for clock and timing applications. The five oscillators' overall promising performance suggests suitability for multimode resonant sensing and real-time frequency tracking. This work also elucidates mode dependency in oscillator noise and stability, one of the key attributes of mode-engineerable resonators.

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring.

Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III-nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom-up and top-down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast-emerging research field.

High temperature silicon-carbide-based flexible electronics for monitoring hazardous environments.

With its unprecedented properties over conventional rigid platforms, flexible electronics have been a significant research topic in the last decade, offering a broad range of applications from bendable display, flexible solar-energy systems, to soft implantable-devices for health monitoring. Flexible electronics for harsh and hazardous environments have also been extensively investigated. In particular, devices with stretchability and bend-ability as well as tolerance to extreme and toxic operating conditions are imperative. This work presents silicon carbide grown on silicon and then transferred onto polyimide substrate as a new platform for flexible sensors for hostile environments. Combining the excellent electrical properties of SiC and high temperature tolerance of polyimide, we demonstrated for the first time a flexible SiC sensors that can work above 400 °C. This new sensing platform opens exciting opportunities toward flexible sensing applications in hazardous environments.

Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure.

This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about -455 under illumination of 635 nm wavelength at 3.0 mW/cm2. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required.

Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.