Post-Traumatic Stress and School Adaptation in Adolescent Survivors Five Years after the 2010 Yushu Earthquake in China.

(1) Background: The devastating Ms 7.1 earthquake struck Yushu city, China, in 2010, leading to serious consequences and damage in the central Tibetan Plateau. This study aimed to assess school adaptation and post-traumatic stress disorder (PTSD) symptoms of adolescent survivors five years after the Yushu earthquake. (2) Methods: A large-scale, school-based mental health survey was conducted 5 years after the earthquake among Tibetan students in the city of Yushu using the Adolescent's School Adaptation Scale (ASAS) and the PTSD Checklist. (3) Results: A total of 1976 questionnaires were collected. A total of 30.7% of Tibetan adolescents had poor school adaptation and 19.5% were estimated as having probable PTSD. Logistic regression showed that females (OR = 0.73, 95% CI: 0.60-0.89), senior students (OR = 0.48, 95% CI: 0.39-0.59), and those who participated in post-disaster reconstruction (OR = 0.68, 95% CI: 0.54-0.85) were less likely to have poor school adaptation, while a positive association was observed among those buried under a collapsed building (OR = 1.47, 95% CI: 1.04-2.09) and those who experienced bereavement (OR = 1.77, 95% CI: 1.27-2.45). Students who had experienced bereavement were also more likely to have PTSD (OR = 1.60, 95% CI: 1.12-2.28). (4) Conclusions: The post-traumatic effects of the Yushu earthquake on Tibetan adolescents were severe and long-lasting. Sustainable long-term mental health services to help adolescents to restructure their mental health are necessary.

Size-tunable CsPbBr3 perovskite ring arrays for lasing.

Morphology engineering is a decisive factor for the optoelectronic properties of nanocrystals. Differing from morphologies with a solid interior, ring-like structures have a unique internal space which is not only available for loading chemicals, but also useful for controlling the field distribution. Herein, the perovskite array family welcomes a new member - CsPbBr3 ring arrays. This work solves several fundamental problems for fabricating CsPbBr3 ring arrays: (i) developing a simple method using 2D colloidal crystal templates to achieve ring arrays of CsPbBr3, (ii) finding two ways, say changing the template size or annealing of the template, to accurately tune the ring size of the array in a wide range from 2.6 µm to 16.9 µm, and (iii) investigating the dynamics of perovskite rings, which indicates a shrinking process towards the template spheres before the crystallization of the perovskites. Finally, the application of CsPbBr3 perovskite ring arrays to the field of lasers is shown.

Near-infrared BODIPY-based two-photon ClO- probe based on thiosemicarbazide desulfurization reaction: naked-eye detection and mitochondrial imaging.

Hypochlorite serves as a significant antimicrobial agent in the human immune system, and its detection is of great importance. Herein, a novel near-infrared BODIPY-based ClO- fluorescent probe (NCS-BOD-OCH3) was designed and synthesized. The emission bands of NCS-BOD-OCH3 concentrated at 595 nm and 665 nm. Since the electron withdrawing group 1,3,4-oxadiazole was formed after the desulfurization reaction, the fluorescence intensity of NCS-BOD-OCH3 decreased significantly in THF/H2O (v/v, 1 : 1, buffered with 10 mM PBS pH = 7.4), which is visible to the naked eye with an obvious color change. NCS-BOD-OCH3 can realize the two-photon up-converted fluorescence emission. The low detection limit was calculated from the titration results, with the figure for NCS-BOD-OCH3/ClO- being 1.15 × 10-6 M. The result of living cell imaging experiment demonstrated that NCS-BOD-OCH3 can successfully detect ClO- in living cells and can serve as a NIR mitochondrial imaging agent. It is an excellent platform for developing NIR ClO- fluorescent probes.

Thin absorber extreme ultraviolet photomask based on Ni-TaN nanocomposite material.

We study the use of random nanocomposite material as a photomask absorber layer for the next generation of extreme ultraviolet (EUV) lithography. By introducing nickel nanoparticles (NPs) randomly into a TaN host, the nanocomposite absorber layer can greatly reduce the reflectivity as compared with the standard TaN layer of the same thickness. Finite integral simulations show that the reduction in the reflectivity is mainly due to the enhanced absorption by the Ni NPs. The fluctuation in reflectivity induced by scattering and random position of the NPs is found to be on the order of 0.1%. Based on these observations, we build an effective medium model for the nanocomposite absorber layer and use the transfer matrix method to identify optimal absorber designs that utilize cavity effects to reduce the required volume fraction of Ni NPs. We further perform a process simulation and show that our approach can greatly reduce the HV bias in the lithography process.

In Situ Transmission Electron Microscopy Modulation of Transport in Graphene Nanoribbons.

In situ transmission electron microscopy (TEM) electronic transport measurements in nanoscale systems have been previously confined to two-electrode configurations. Here, we use the focused electron beam of a TEM to fabricate a three-electrode geometry from a continuous 2D material where the third electrode operates as side gate in a field-effect transistor configuration. Specifically, we demonstrate TEM nanosculpting of freestanding graphene sheets into graphene nanoribbons (GNRs) with proximal graphene side gates, together with in situ TEM transport measurements of the resulting GNRs, whose conductance is modulated by the side-gate potential. The TEM electron beam displaces carbon atoms from the graphene sheet, and its position is controlled with nanometer precision, allowing the fabrication of GNRs of desired width immediately prior to each transport measurement. We also model the corresponding electric field profile in this three-terminal geometry. The implementation of an in situ TEM three-terminal platform shown here further extends the use of a TEM for device characterization. This approach can be easily generalized for the investigation of other nanoscale systems (2D materials, nanowires, and single molecules) requiring the correlation of transport and atomic structure.

Ag- and Mn-doped ZnInS/ZnS dual-emission quantum dots with zone tunability in the color coordinate.

In this work, we used Ag- and Mn-doped ZnInS/ZnS quantum dots (QDs) acting as a new generation of nontoxic dual-emission QDs with simultaneous tunable emission wavelengths and dual-emission ratiometric, which makes nontoxic dual-emission QDs with broad zone tunability in the color coordinate. The Ag-doped ZnInS ternary QDs can give rise to largely tunable emission wavelengths from 497 nm to 631 nm. The ratiometric of Ag and Mn dual emissions can be tuned by controlling Ag­Mn and Mn­Mn dopant coupling. With increased Mn doping amount, the increased Ag­Mn dopant coupling leads to increased Mn emission at the expense of lowered Ag emission and Ag fluorescence lifetime. The Mn­Mn coupling can be controlled by using different doping manners: co-doping Ag and Mn in ZnInS core or separate-doping Ag in ZnInS core and Mn in ZnS shell. Compared with co-doping, separate doping has weaker Mn­Mn interactions, an increased Mn irradiative recombination rate constant, and bright Mn photoluminescence.

Electronic transport of recrystallized freestanding graphene nanoribbons.

The use of graphene and other two-dimensional materials in next-generation electronics is hampered by the significant damage caused by conventional lithographic processing techniques employed in device fabrication. To reduce the density of defects and increase mobility, Joule heating is often used since it facilitates lattice reconstruction and promotes self-repair. Despite its importance, an atomistic understanding of the structural and electronic enhancements in graphene devices enabled by current annealing is still lacking. To provide a deeper understanding of these mechanisms, atomic recrystallization and electronic transport in graphene nanoribbon (GNR) devices are investigated using a combination of experimental and theoretical methods. GNR devices with widths below 10 nm are defined and electrically measured in situ within the sample chamber of an aberration-corrected transmission electron microscope. Immediately after patterning, we observe few-layer polycrystalline GNRs with irregular sp(2)-bonded edges. Continued structural recrystallization toward a sharp, faceted edge is promoted by increasing application of Joule heat. Monte Carlo-based annealing simulations reveal that this is a result of concentrated local currents at lattice defects, which in turn promotes restructuring of unfavorable edge structures toward an atomically sharp state. We establish that intrinsic conductance doubles to 2.7 e(2)/h during the recrystallization process following an almost 3-fold reduction in device width, which is attributed to improved device crystallinity. In addition to the observation of consistent edge bonding in patterned GNRs, we further motivate the use of bonded bilayer GNRs for future nanoelectronic components by demonstrating how electronic structure can be tailored by an appropriate modification of the relative twist angle of the bonded bilayer.

Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.

CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN.

Correlating atomic structure and transport in suspended graphene nanoribbons.

Graphene nanoribbons (GNRs) are promising candidates for next generation integrated circuit (IC) components; this fact motivates exploration of the relationship between crystallographic structure and transport of graphene patterned at IC-relevant length scales (<10 nm). We report on the controlled fabrication of pristine, freestanding GNRs with widths as small as 0.7 nm, paired with simultaneous lattice-resolution imaging and electrical transport characterization, all conducted within an aberration-corrected transmission electron microscope. Few-layer GNRs very frequently formed bonded-bilayers and were remarkably robust, sustaining currents in excess of 1.5 µA per carbon bond across a 5 atom-wide ribbon. We found that the intrinsic conductance of a sub-10 nm bonded bilayer GNR scaled with width as GBL(w) ≈ 3/4(e(2)/h)w, where w is the width in nanometers, while a monolayer GNR was roughly five times less conductive. Nanosculpted, crystalline monolayer GNRs exhibited armchair-terminated edges after current annealing, presenting a pathway for the controlled fabrication of semiconducting GNRs with known edge geometry. Finally, we report on simulations of quantum transport in GNRs that are in qualitative agreement with the observations.

Dual-functional sensor based on switchable plasmonic structure of VO2 nano-crystal films and Ag nanoparticles.

Utilizing the insulator-metal phase transition of vanadium dioxide (VO2) crystal films, we develop a dual-functional sensor based on the coupling between VO2 nano-crystal films and Ag nanoparticles, which can probe fluorescence or Raman signals on the same substrate and it is switchable by changing temperature. At room temperature, the VO2 crystal films is insulator phase and the fluorescence signals of probe molecules (R6G) is detectable (Raman is in "off"). At high temperature (such as 85 °C), the VO2 crystal films become metallic phase. Ag nanoparticles interact with the metal phase of VO2 crystal films to produce stronger localized electric field. The stronger electric field can excite the Raman signals of probe molecules (R6G) and the coupled structure can also emit the Raman signals out efficiently (Raman is in "on"). The switchable probe of fluorescence and Raman signals would have potential applications in active photoelectric components, such as intelligent switch and multifunctional active sensor etc.

Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.

Graphene-boron nitride monolayer heterostructures contain adjacent electrically active and insulating regions in a continuous, single-atom thick layer. To date structures were grown at low pressure, resulting in irregular shapes and edge direction, so studies of the graphene-boron nitride interface were restricted to the microscopy of nanodomains. Here we report templated growth of single crystalline hexagonal boron nitride directly from the oriented edge of hexagonal graphene flakes by atmospheric pressure chemical vapor deposition, and physical property measurements that inform the design of in-plane hybrid electronics. Ribbons of boron nitride monolayer were grown from the edge of a graphene template and inherited its crystallographic orientation. The relative sharpness of the interface was tuned through control of growth conditions. Frequent tearing at the graphene-boron nitride interface was observed, so density functional theory was used to determine that the nitrogen-terminated interface was prone to instability during cool down. The electronic functionality of monolayer heterostructures was demonstrated through fabrication of field effect transistors with boron nitride as an in-plane gate dielectric.