Coexistence of Strong and Weak Topological Orders in a Quasi-One-Dimensional Material.

Topological materials have broad application prospects in quantum computing and spintronic devices. Among them, dual topological materials with low dimensionality provide an excellent platform for manipulating various topological states and generating highly conductive spin currents. However, direct observation of their topological surface states still lacks. Here, we reveal the coexistence of the strong and weak topological phases in a quasi-one-dimensional material, TaNiTe_{5}, by spin- and angle- resolved photoemission spectroscopy. The surface states protected by weak topological order forms Dirac-node arcs in the vicinity of the Fermi energy, providing the opportunity to develop spintronics devices with high carrier density that is tunable by bias voltage.

Single-Crystal MoS2 Monolayer Wafer Grown on Au (111) Film Substrates.

Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC-MoS2 ) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.