Refractive index gratings in electro-optic polymer thin films.

Refractive index gratings have been inscribed in polymer thin films by permanently photobleaching the organic chromophore PYR-3 dopant. The grating inscription process was investigated in detail for the purpose of improving the diffraction efficiency (η) of the PYR-3 doped polymer gratings. Three processes were identified that contributed to the η of the first diffracted order: a periodic change in the refractive index due to photobleaching of the PYR-3, formation of the surface relief grating as a consequence of free volume change during bleaching, and the introduction of periodic, strain-induced changes in the refractive index.

Thermoluminescence apparatus using PT100 resistors as the heating and sensing elements.

A novel apparatus for obtaining thermoluminescence glow curves is described. Two standard PT100 precision resistors, which have a well-known dependence of resistance on temperature, are connected back to back to provide a sensing and heating element. The resulting hot finger has very low thermal mass, is nonreactive, and is inexpensive. With dry nitrogen gas-flow cooling, an operational range of -50 to 450 degrees C is achievable. A tailored control circuit which is easily calibrated drives the heating element, and temperature ramps are implemented in software. The simple design permits the use of modularly interchangeable hot fingers for rapid measurement of many samples.

Signature of carrier-induced ferromagnetism in Ti(1-x)Co(x)O(2-delta): exchange interaction between high-spin Co2+ and the Ti 3d conduction band.

X-ray photoemission spectroscopy measurements were performed on thin-film samples of rutile Ti(1-x)Co(x)O(2-delta) to reveal the electronic structure. The Co 2p core-level spectra indicate that the Co ions take the high-spin Co2+ configuration, consistent with substitution on the Ti site. The high-spin state and the shift due to the exchange splitting of the conduction band suggest strong hybridization between carriers in the Ti 3d t(2g) band and the t(2g) states of the high-spin Co+2 . These observations support the argument that room temperature ferromagnetism in Ti(1-x)Co(x)O(2-delta) is intrinsic.

X-Ray photoemission study of CuIr2S4: Ir3+-Ir4+ charge ordering and the effect of light illumination.

We have studied the electronic structure of the spinel-type compound CuIr2S4 using x-ray photoemission spectroscopy (XPS). CuIr2S4 undergoes a metal-insulator transition (MIT) at approximately 226 K. In going from the metallic to insulating states, the valence-band photoemission spectrum shows a gap opening at the Fermi level and a rigid-band shift of approximately 0.15 eV. In addition, the Ir 4f core-level spectrum is dramatically changed by the MIT. The Ir 4f line shape of the insulating state can be decomposed into two contributions, consistent with the charge disproportionation of Ir3+:Ir4+=1:1. XPS measurements under laser irradiation indicate that the charge disproportionation of CuIr2S4 is very robust against photo-excitation in contrast to Cs2Au2Br6 which shows photo-induced valence transition.

Photoemission study of YBa(2)Cu(3)O(y) thin films under light illumination.

Heterojunctions of Nb-doped SrTiO3 substrate and YBa(2)Cu(3)O(y) thin films show photoconductivity and photovoltaic effects due to photocarrier injection. Photocarrier injection is expected to be a new carrier doping method in strongly correlated systems instead of chemical substitution. We have studied the nature of photocarrier injection in YBa(2)Cu(3)O(y)/SrTiO(3):Nb using x-ray photoemission spectroscopy with pulsed laser excitation. The core-level spectra shift to higher binding energy by 0.78 eV under pulsed laser illumination at 30 Hz. The energy shift corresponds to the photovoltage, which arises at the interface. In addition, we have observed that the energy shift strongly depends on the frequency of the laser. The lifetime of the injected photoholes has been estimated to be 40 ms by analyzing the frequency dependence.

c-Axis Raman scattering spectra of MgB2: observation of a dirty-limit gap in the pi bands.

Raman scattering spectra from the ac face of thick MgB2 single crystals were measured in zz, xz, and xx polarizations. In zz and xz polarizations a threshold at around 29 cm(-1) forms in the below T(c) continuum but no pair-breaking peak is seen, in contrast to the sharp pair-breaking peak at around 100 cm(-1) in xx polarization. The zz and xz spectra are consistent with Raman scattering from a dirty superconductor while the sharp peak in the xx spectra argues for a clean system. Analysis of the spectra resolves this contradiction, placing the larger and smaller gap magnitudes in the sigma and pi bands and indicating that relatively strong impurity scattering is restricted to the pi bands.

Superconducting gap in MgB(2): electronic Raman scattering measurements of single crystals.

Polarization-resolved Raman scattering measurements were performed on MgB(2) single crystals to determine the magnitude, symmetry, and temperature dependence of the superconducting gap. A single sharp peak due to Cooper pair breaking appears in the electronic continuum below T(c), reaching a maximum Raman shift of 105 +/- 1 cm(-1) [2 Delta(0)/k(B)T(c) = 3.96 +/- 0.09] and showing up to 5 cm(-1) anisotropy between polarized and depolarized spectra. The temperature dependence of 2 Delta follows that predicted from BCS theory, while the anisotropy decreases with decreasing temperature. It is concluded that the Raman results are consistent with a slightly anisotropic s-wave gap in a conventional BCS superconductor.