RESUMO
Si nanowires (NWs) integrated in a field effect transistor device structure are characterized using scanning electron (SEM), atomic force, and scanning Kelvin probe force (KPFM) microscopy. Reactive ion etching (RIE) and vapor-liquid-solid (VLS) growth were used to fabricate NWs between predefined electrodes. Characterization of Si NWs identified defects and/or impurities that affect the surface electronic structure. RIE NWs have defects that both SEM and KPFM analysis associate with a surface contaminant as well as defects that have a voltage dependent response indicating impurity states in the energy bandgap. In the case of VLS NWs, even after aqua regia, Au impurity levels are found to induce impurity states in the bandgap. KPFM data, when normalized to the oxide-capacitance response, also identify a subset of VLS NWs with poor electrical contact due to nanogaps and short circuits when NWs cross that is not observed in AFM images or in current-voltage measurements when NWs are connected in parallel across electrodes. The experiments and analysis presented outline a systematic method for characterizing a broad array of nanoscale systems under device operation conditions.
RESUMO
Gold nanoparticles from commercially available colloids were deposited onto a hydrogen-terminated silicon substrate without the use of a polyelectrolyte linker by the addition of HF acid. The deposition density was shown to be controlled over three orders of magnitude by varying the colloid concentration, and finer control is achieved by varying the deposition time. In order to minimise agglomeration, however, we show that deposition times should be minimised since nanoparticle agglomeration increases rapidly over the first 2 min after the addition of HF. To increase nanoparticle density without increasing agglomeration, we show that successive depositions of short times linearly increase the deposition density without increasing the agglomeration of nanoparticles.
