Microstructure and electrochemical properties of high performance graphene/manganese oxide hybrid electrodes.

Hybrids consisting of 2D ultra-large reduced graphene oxide (RGO) sheets (∼30 µm long) and 1D α-phase manganese oxide (MnO2) nanowires were fabricated through a versatile synthesis technique that results in electrostatic binding of the nanowires and sheets. Two different hybrid (RGO/MnO2) compositions had remarkable features and performance: 3 : 1 MnO2/RGO (75/25 wt%) denoted as 3H and 10 : 1 MnO2/RGO (90/10 wt%) denoted as 10H. Characterization using spectroscopy, microscopy, and thermal analysis provided insights into the microstructure and behavior of the individual components and hybrids. Both hybrids exhibited higher specific capacitance than their individual components. 3H demonstrated excellent overall electrochemical performance with specific capacitance of 225 F g-1, pseudocapacitive and electrochemical double-layer capacitance (EDLC) contributions, charge-transfer resistance <1 Ω, and 97.8% capacitive retention after 1000 cycles. These properties were better than those of 10H; this was attributed 3H's more uniform distribution of nanowires enabling more effective electronic transport. Thermal annealing was used to produce reduced graphene oxide (RGO) that exhibited significant removal of oxygen functionality with a resulting interlayer spacing of 0.391 nm, higher D/G ratio, higher specific capacitance, and electrochemical properties representing more ideal capacitive behavior than GO. Integrating ultra-large RGO with very high surface area and MnO2 nanowires enables chemical interactions that may improve processability into complex architectures and electrochemical performance of electrodes for applications in electronics, sensors, catalysis, and deionization.

Quantum dot solar cells: hole transfer as a limiting factor in boosting the photoconversion efficiency.

Semiconductor nanostructures are attractive for designing low-cost solar cells with tunable photoresponse. The recent advances in size- and shape-selective synthesis have enabled the design of quantum dot solar cells with photoconversion efficiencies greater than 5%. To make them competitive with other existing thin film or polycrystalline photovoltaic technologies, it is important to overcome kinetic barriers for charge transfer at semiconductor interfaces. This feature article focuses on the limitations imposed by slow hole transfer in improving solar cell performance and its role in the stability of metal chalcogenide solar cells. Strategies to improve the rate of hole transfer through surface-modified redox relays offer new opportunities to overcome the hole-transfer limitation. The mechanistic and kinetic aspects of hole transfer in quantum dot solar cells (QDSCs), nanowire solar cells (NWSCs), and extremely thin absorber (ETA) solar cells are discussed.

How Does a SILAR CdSe Film Grow? Tuning the Deposition Steps to Suppress Interfacial Charge Recombination in Solar Cells.

Successive ionic layer adsorption and reaction (SILAR) is a popular method of depositing the metal chalcogenide semiconductor layer on the mesoscopic metal oxide films for designing quantum-dot-sensitized solar cells (QDSSCs) or extremely thin absorber (ETA) solar cells. While this deposition method exhibits higher loading of the light-absorbing semiconductor layer than direct adsorption of presynthesized colloidal quantum dots, the chemical identity of these nanostructures and the evolution of interfacial structure are poorly understood. We have now analyzed step-by-step SILAR deposition of CdSe films on mesoscopic TiO2 nanoparticle films using X-ray absorption near-edge structure analysis and probed the interfacial structure of these films. The film characteristics interestingly show dependence on the order in which the Cd and Se are deposited, and the CdSe-TiO2 interface is affected only during the first few cycles of deposition. Development of a SeO2 passivation layer in the SILAR-prepared films to form a TiO2/SeO2/CdSe junction facilitates an increase in photocurrents and power conversion efficiencies of quantum dot solar cells when these films are integrated as photoanodes in a photoelectrochemical solar cell.

Making graphene holey. Gold-nanoparticle-mediated hydroxyl radical attack on reduced graphene oxide.

Graphene oxide (GO) and reduced graphene oxide (RGO) have important applications in the development of new electrode and photocatalyst architectures. Gold nanoparticles (AuNPs) have now been employed as catalyst to generate OH(•) and oxidize RGO via hydroxyl radical attack. The oxidation of RGO is marked by pores and wrinkles within the 2-D network. Nanosecond laser flash photolysis was used in conjunction with competition kinetics to elucidate the oxidative mechanism and calculate rate constants for the AuNP-catalyzed and direct reaction between RGO and OH(•). The results highlight the use of the AuNP-mediated oxidation reaction to tune the properties of RGO through the degree of oxidation and/or functional group selectivity in addition to the nanoporous and wrinkle facets. The ability of AuNPs to catalyze the photolytic decomposition of H2O2 as well as the hydroxyl radical-induced oxidation of RGO raises new issues concerning graphene stability in energy conversion and storage (photocatalysis, fuel cells, Li-ion batteries, etc.). Understanding RGO oxidation by free radicals will aid in maintaining the long-term stability of RGO-based functional composites where intimate contact with radical species is inevitable.

Cu2S Reduced Graphene Oxide Composite for High-Efficiency Quantum Dot Solar Cells. Overcoming the Redox Limitations of S2-/Sn2- at the Counter Electrode.

Polysulfide electrolyte that is employed as a redox electrolyte in quantum dot sensitized solar cells provides stability to the cadmium chalcogenide photoanode but introduces significant redox limitations at the counter electrode through undesirable surface reactions. By designing reduced graphene oxide (RGO)-Cu2S composite, we have now succeeded in shuttling electrons through the RGO sheets and polysulfide-active Cu2S more efficiently than Pt electrode, improving the fill factor by ∼75%. The composite material characterized and optimized at different compositions indicates a Cu/RGO mass ratio of 4 provides the best electrochemical performance. A sandwich CdSe quantum dot sensitized solar cell constructed using the optimized RGO-Cu2S composite counter electrode exhibited an unsurpassed power conversion efficiency of 4.4%.