Association between cognitive capacity and metabolic indices in patients with neuropsychiatric disorders.

BACKGROUND: Although previous studies suggested the relationship between metabolic indices and cognitive capacity, results have been conflicting. The prevalence of metabolic and cognitive disorders is high in patients with neuropsychiatric disorders. We aimed to assess the relationship between laboratory metabolic indices and specific areas of cognitive capacity. MATERIALS AND METHODS: This was a retrospective review of the medical records of 423 from 452 patients with neuropsychiatric disorders who were admitted to the neuropsychiatry unit, Ayatollah Kashani Hospital, Isfahan, Iran, from September 1, 2018, to September 30, 2022. We extracted demographic factors, laboratory metabolic indices, and scores of the Neuropsychiatry Unit Cognitive Assessment tool (NUCOG). We utilized a generalized linear model (GLM) to demonstrate the effect of metabolic indices on the risk of reduction in cognitive domains. Due to the presence of missing data in the metabolic indices, we used the multiple imputation method. RESULTS: The regression coefficient of NUCOG total score and subscale scores for metabolic indices using GLM after multiple imputation method demonstrated that among the metabolic indicators, fasting blood sugar (FBS) had the reverse relationship with the total score of NUCOG (ß = -.05). Among the NUCOG subscales, executive functioning had the strongest relationship with FBS (ß = -.01). Also, there was a negative relationship between patients' age and the total score of NUCOG (ß = -.38). Educational level had a positive relationship with the total NUCOG score (ß =10.2). CONCLUSIONS: The main metabolic factors that might reduce cognitive capacity were higher FBS.

Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors.

The largest applications of high-performance graphene will likely be realized when combined with ubiquitous Si very large scale integrated (VLSI) technology, affording a new portfolio of "back end of the line" devices including graphene radio frequency transistors, heat and transparent conductors, interconnects, mechanical actuators, sensors, and optical devices. To this end, we investigate the scalable growth of polycrystalline graphene through chemical vapor deposition (CVD) and its integration with Si VLSI technology. The large-area Raman mapping on CVD polycrystalline graphene on 150 and 300 mm wafers reveals >95% monolayer uniformity with negligible defects. About 26,000 graphene field-effect transistors were realized, and statistical evaluation indicates a device yield of ∼ 74% is achieved, 20% higher than previous reports. About 18% of devices show mobility of >3000 cm(2)/(V s), more than 3 times higher than prior results obtained over the same range from CVD polycrystalline graphene. The peak mobility observed here is ∼ 40% higher than the peak mobility values reported for single-crystalline graphene, a major advancement for polycrystalline graphene that can be readily manufactured. Intrinsic graphene features such as soft current saturation and three-region output characteristics at high field have also been observed on wafer-scale CVD graphene on which frequency doubler and amplifiers are demonstrated as well. Our growth and transport results on scalable CVD graphene have enabled 300 mm synthesis instrumentation that is now commercially available.

Group-index independent coupling to band engineered SOI photonic crystal waveguide with large slow-down factor.

Group-index independent coupling to a silicon-on-insulator (SOI) based band-engineered photonic crystal (PCW) waveguide is presented. A single hole size is used for designing both the PCW coupler and the band-engineered PCW to improve fabrication yield. Efficiency of several types of PCW couplers is numerically investigated. An on-chip integrated Fourier transform spectral interferometry device is used to experimentally determine the group-index while excluding the effect of the couplers. A low-loss, low-dispersion slow light transmission over 18 nm bandwidth under the silica light line with a group index of 26.5 is demonstrated, that corresponds to the largest slow-down factor of 0.31 ever demonstrated for a PCW with oxide bottom cladding.

Implantable drug delivery device using frequency-controlled wireless hydrogel microvalves.

This paper reports a micromachined drug delivery device that is wirelessly operated using radiofrequency magnetic fields for implant applications. The controlled release from the drug reservoir of the device is achieved with the microvalves of poly(N-isopropylacrylamide) thermoresponsive hydrogel that are actuated with a wireless resonant heater, which is activated only when the field frequency is tuned to the resonant frequency of the heater circuit. The device is constructed by bonding a 1-mm-thick polyimide component with the reservoir cavity to the heater circuit that uses a planar coil with the size of 5-10 mm fabricated on polyimide film, making all the outer surfaces to be polyimide. The release holes created in a reservoir wall are opened/closed by the hydrogel microvalves that are formed inside the reservoir by in-situ photolithography that uses the reservoir wall as a photomask, providing the hydrogel structures self-aligned to the release holes. The wireless heaters exhibit fast and strong response to the field frequency, with a temperature increase of up to 20°C for the heater that has the 34-MHz resonant frequency, achieving 38-% shrinkage of swelled hydrogel when the heater is excited at its resonance. An active frequency range of ~2 MHz is observed for the hydrogel actuation. Detailed characteristics in the fabrication and actuation of the hydrogel microvalves as well as experimental demonstrations of frequency-controlled temporal release are reported.