Positive and Negative Photoconductivity in Ir Nanofilm-Coated MoO3 Bias-Switching Photodetector.

In this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO3 wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 × 1019 cm-3 with 0.19 nm roughness. Using the Kubelka-Munk model, we found that the bandgap decreased with increasing Ir thickness, consistent with Urbach tail energy suggesting a lower level of disorder. Regarding transient photocurrent behavior, all samples exhibited high stability under both dark and UV conditions. We also observed a positive photoconductivity at bias voltages of >0.5 V, while at 0 V bias voltage, the samples displayed a negative photoconductivity behavior. This unique aspect allowed us to explore self-powered negative photodetectors, showcasing fast response and recovery times of 0.36/0.42 s at 0 V. The intriguing negative photoresponse that we observed is linked to hole self-trapping/charge exciton and Joule heating effects.

Negative Photoconductivity in 2D α-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealing.

Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO3 photodetectors. An ultrathin MoO3/Ir/SiO2/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO2/Si sample displays a sheet carrier concentration of 5.76 × 1011/cm², which subsequently increases to 6.74 × 1012/cm² after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO3 layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications.

Information communication and technology in sports: a meticulous review.

Introduction: Sports of all kinds even though have an alluring property of keeping their onlookers stuck to their place, the introduction of Technology, however, revolutionized it all together. Not only in legal sports but also the training and teaching methods have been reformed. The use of Information Communication and Technology (ICT) based technologies [Convolutional Neural Networks (CNN), Hawkeye, Computer vision, Artificial intelligence, etc.] has moderately increased the interactive nature of sports. Employing ICT-driven technologies have continuously been increasing performance levels due to which high effective performance levels have been achieved. In addition to offering information to the users, it also acts as a means for connecting and interacting with the remaining world. In this article, we provide a review of the studies considering the developments and impact of employing ICT technology on sports, especially cricket. The study has focussed on domain-specific developments in cricket sports: developments in the batting domain, bowling domain, and wicketkeeping as well. Methods: For the study, the analysis has been done following the PRISMA guidelines. Results: The study found that even though the researchers have done justifiable work in employing technology in sports as a whole but the domain-specific contribution in sports like cricket is not at the level as is need of the hour. In addition to the mentioned domains in the study, the research should gain speed in other domains like domain-specific Talent Identification for both genders, different age groups, diverse sports, etc. Discussion: undoubtedly, the sports domain is employing technology at a vast level but a few domains like sports talent identification especially related to the most famous games like cricket require an immediate and intense focus of the researchers. Since this domain is still carrying out a traditional coach-oriented approach. There is an acute need to revolutionize the domain by incorporating modern technologies into it.

First-principles study on electronic and optical properties of single-walled carbon nanotube under an external electric field.

In this study, the electronic and optical properties of one-dimensional (1D) single-walled carbon nanotube (SWCNT) nanostructures, and under the external electric field [Formula: see text] applied in the z-direction, are investigated using density functional theory (DFT) calculations. The applied [Formula: see text] leads to significant modulation of the bandgap and changes the total density of states (TDOS), partial density of states (PDOS), absorption coefficient, dielectric function, optical conductivity, refractive index, and the loss function. The application of the [Formula: see text] on the SWCNT/Carboxyl structure leads to tighten its bandgap. The peaks of TDOS around the Fermi level are very weak. The absorption coefficient increases in visible range and decreases in ultraviolet (UV) domain proportionally with the [Formula: see text]. It is found that electronic structures and optical properties of the SWCNT/Carboxyl could be affected by the [Formula: see text]. All these results provide the important information for understanding and controlling the electronic and optical properties of 1D crystals by the [Formula: see text]. This study establishes a theoretical foundation for our future experimental work regarding optoelectronic properties of the SWCNT/Carboxyl material.