CdS-decorated ZnO nanorod heterostructures for improved hybrid photovoltaic devices.

Cadmium sulfide (CdS)-decorated zinc oxide (ZnO) nanorod heterostructures have been grown by a combination of hydrothermal and pulsed laser deposition techniques. Hybrid photovoltaic devices have been fabricated with CdS modified and unmodified ZnO nanorods blended separately with regioregular poly(3-hexylthiophene) (P3HT) polymer as the active layer. The solar cell performance has been studied as a function of ZnO concentration and the casting solvent (chlorobenzene, chloroform, and toluene) in the unmodified ZnO:P3HT devices. The power conversion efficiency is found to be enhanced with the increase of ZnO concentration up to a certain limit, and decreases at a very high concentration. The surface modification of ZnO nanorods with CdS leads to an increase in the open circuit voltage and short-circuit current, with enhanced efficiency by 300% over the unmodified ZnO:P3HT device, because of the cascaded band structure favoring charge transfer to the external circuit.

Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal.

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.