Ultra-dry air plasma treatment for enhancing the dielectric properties of Al2O3-GPTMS-PMMA hybrid dielectric gate layers in a-IGZO TFT applications.

We assessed the effects of ultra dry-air plasma surface treatments on the properties of Al2O3-GPTMS-PMMA hybrid dielectric layers for applications to high-performance amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors (TFTs). The hybrid layers were deposited by an easy dip coating sol-gel process at low temperature and then treated with dry-air plasma at 1, 2 and 3 consecutive cycles. Their properties were analyzed as a function of the number of plasma cycles and contrasted with those of the untreated ones. The dielectric characteristics of the hybrid layers were determined from I-V and C-f measurements performed on metal-insulator-metal and metal-insulator-semiconductor devices. The results show that the plasma treatments increase the surface energy and wettability of the hybrid films. There is also a reduction of the OH groups and oxygen vacancies in the hybrid network improving the dielectric properties. The incorporation of nitrogen into the hybrid films surface is also observed. The plasma-treated hybrid dielectric layers were applied as dielectric gate in the fabrication of a-IGZO TFTs. The best electrical performance of the fabricated TFTs was achieved with the 3 cycles plasma-treated hybrid dielectric gate, showing high mobility, 29.3 cm2 V-1 s-1, low threshold voltage, 2.9 V, high I ON/OFF current ratio, 106, and low subthreshold swing of 0.42 V dec-1.

Ferroelectric-Paraelectric Transition In A Membrane With Quenched-Induced δ-Phase Of PVDF.

The stabilization of δ-phase of poly(vinylidene fluoride) PVDF in a 14 µm-thickness ferroelectric membrane is achieved by a simple route based on the use of a dimethylformamide (DMF)/acetone solvent, in which the application of external electric field is not required. X-ray diffraction and calorimetric experiments on heating reveal that, at 154 °C, the original mixture between ferroelectric δ-phase and paraelectric α-phase transits to a system with only this latter phase in the crystalline fraction. A gradual and slight increment of amorphous fraction up to the melting at 161 °C is also observed. The existence of δ-phase is corroborated by the occurrence of a broad maximum around 154 °C in dielectric permittivity measurements, as well as the hysteresis loops observed at room temperature. These results suggest a wide thermal window for a stable δ-phase, between room temperature and 154 °C, a subsequent transition into α-phase and the corresponding melting at 161 °C. The broad dielectric maximum observed around 154 °C in dielectric and calorimetric measurements, can be associated with a diffuse ferroelectric-paraelectric transition.

Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.