RESUMO
This paper reports a novel composite-based processing route for improving the electrical performance of Ca3Co4O9 thermoelectric (TE) ceramics. The approach involves the addition of metallic Co, acting as a pore filler on oxidation, and considers two simple sintering schemes. The (1-x)Ca3Co4O9/xCo composites (x = 0%, 3%, 6% and 9% vol.) have been prepared through a modified Pechini method, followed by one- and two-stage sintering, to produce low-density (one-stage, 1ST) and high-density (two-stage, 2ST) ceramic samples. Their high-temperature TE properties, namely the electrical conductivity (σ), Seebeck coefficient (α) and power factor (PF), were investigated between 475 and 975 K, in air flow, and related to their respective phase composition, morphology and microstructure. For the 1ST case, the porous samples (56%-61% of ρth) reached maximum PF values of around 210 and 140 µWm-1·K-2 for the 3% and 6% vol. Co-added samples, respectively, being around two and 1.3 times higher than those of the pure Ca3Co4O9 matrix. Although 2ST sintering resulted in rather dense samples (80% of ρth), the efficiency of the proposed approach, in this case, was limited by the complex phase composition of the corresponding ceramics, impeding the electronic transport and resulting in an electrical performance below that measured for the Ca3Co4O9 matrix (224 µWm-1·K-2 at 975K).
RESUMO
Zinc oxide (ZnO) has being recognised as a potentially interesting thermoelectric material, allowing flexible tuning of the electrical properties by donor doping. This work focuses on the assessment of tantalum doping effects on the relevant structural, microstructural, optical and thermoelectric properties of ZnO. Processing of the samples with a nominal composition Zn1-xTaxO by conventional solid-state route results in limited solubility of Ta in the wurtzite structure. Electronic doping is accompanied by the formation of other defects and dislocations as a compensation mechanism and simultaneous segregation of ZnTa2O6 at the grain boundaries. Highly defective structure and partial blocking of the grain boundaries suppress the electrical transport, while the evolution of Seebeck coefficient and band gap suggest that the charge carrier concentration continuously increases from x = 0 to 0.008. Thermal conductivity is almost not affected by the tantalum content. The highest ZT~0.07 at 1175 K observed for Zn0.998Ta0.002O is mainly provided by high Seebeck coefficient (-464 V/K) along with a moderate electrical conductivity of ~13 S/cm. The results suggest that tantalum may represent a suitable dopant for thermoelectric zinc oxide, but this requires the application of specific processing methods and compositional design to enhance the solubility of Ta in wurtzite lattice.
RESUMO
[Bi2Ba2O4]p[CoO2] thermoelectric ceramics have been successfully grown from the melt using the laser floating zone method, followed by a thermal treatment at 700 °C under air between 0 and 1532 h. The microstructural, thermoelectric, and mechanical properties were evaluated as a function of the thermal treatment length. Microstructure has shown that as-grown samples are composed of thermoelectric grains, together with a relatively high amount of secondary phases. Thermal treatment decreased the number and amount of secondary phases, producing nearly single-phase samples after 384 h. Consequently, the thermoelectric properties evaluated through the power factor showed a slight increase with the thermal treatment length, mainly due to the decrease of electrical resistivity, while the Seebeck coefficient was nearly unchanged. On the other hand, flexural strength was practically constant after 24 h thermal treatment.
