Correction: An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices.

[This corrects the article DOI: 10.1039/D3RA00078H.].

An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices.

Hybrid lead halide perovskites have been considered as promising candidates for a large variety of optoelectronic applications. By exploring novel combinations of lead-free double perovskite halides, it is possible to find a suitable replacement for poisonous lead halide perovskites, enhancing electronic and optical response for their application as optically-influenced resistive switching random access memory (RRAM). In this work, the structural, mechanical, elastic, electronic, optical, and thermoelectric characteristics of lead-free double halide perovskites were investigated by Vienna ab initio simulation package (VASP) to explore their role in RRAM. From the analysis of mechanical constraints, it is clear that all three composites of Cs2CaSnX6 (X = Cl, Br, I) are mechanically stable and ductile in nature. The electronic bandgap with and without spin-orbit coupling (SOC), and total and sub-total density of states (TDOS, sub-TDOS) have been calculated using the Perdew-Burke-Ernzerhof generalized gradient approximation (PBE-GGA) potentials. The observed direct band gaps of 3.58 eV, 3.09 eV, and 2.60 eV for Cs2CaSnCl6, Cs2CaSnBr6, and Cs2CaSnI6, respectively, reveal the suitability of these specified composites as resistive switching material for RRAM devices. Additionally, the optical characteristics, such as complex refractive index, absorption coefficient, and reflectivity of the compounds under consideration have been calculated under the action of incident photons of 0 to 14 eV energy. The thermoelectric properties of Cs2CaSnX6 (X = Cl, Br, I) double perovskite halide were computed and analyzed with the help of the BoltzTraP Code.

Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study.

Atomic Layer Deposition (ALD) was used for a tri-layer structure (HfO2/Al2O3/HfO2) at low temperature over an Indium Tin Oxide (ITO) transparent electrode. First, the microstructure of the fabricated TaN/HfO2/Al2O3/HfO2/ITO RRAM device was examined by the cross-sectional High-Resolution Transmission Electron Microscopy (HRTEM). Then, Energy Dispersive X-ray Spectroscopy (EDS) was performed to probe compositional mapping. The bipolar resistive switching mode of the device was confirmed through SET/RESET characteristic plots for 100 cycles as a function of applied biasing voltage. An endurance test was performed for 100 DC switching cycles @0.2 V wherein; data retention was found up to 104 s. Moreover, for better insight into the charge conduction mechanism in tri-layer HfO2/Al2O3/HfO2, based on oxygen vacancies (VOX), total density of states (TDOS), partial density of states (PDOS) and isosurface three-dimensional charge density analysis was performed using WEIN2k and VASP simulation packages under Perdew-Burke-Ernzerhof _Generalized Gradient approximation (PBE-GGA). The experimental and theoretical outcomes can help in finding proper stacking of the active resistive switching (RS) layer for resistive random-access memory (RRAM) applications.