Temperature resistant fast InxGa1-xAs / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers.

Quantum-dot-based semiconductor saturable absorber mirrors (SESAMs) with fast response times were developed by molecular beam epitaxy (MBE). Using quantum dots (QDs) in the absorber region of the SESAMs instead of quantum wells, enables additional degrees of freedom in the design, the control of saturation parameters and the recovery dynamics. However, if one wants to integrate such a SESAM element into semiconductor surface emitting lasers such as a mode-locked integrated external-cavity surface-emitting laser (MIXSEL), the saturable absorber layers have to withstand a longer high-temperature growth procedure for the epitaxial formation of distributed Bragg reflectors (DBR). Typically defect related SESAMs will be annealed at those growth temperatures and lose their high-speed performance. Here we present a systematic study on the growth parameters and post-growth annealing of SESAMs based on high-quality InxGa1-xAs/GaAs quantum dots (QDs) grown by MBE at growth temperatures of 450 °C or higher. The good quality enables the QDs to survive the long DBR overgrowth at 600 °C with only minimal shifts in the designed operation wavelength of 1030 nm required for growth of MIXSEL devices. The introduction of recombination centers with p-type modulation doping and additional post-growth annealing improves the absorption of the high-quality QDs. Hence, low saturation fluences < 10 µJ/cm2 and a reduction of the τ1/e recovery time to values < 2 ps can be achieved.

Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities.

We present finite-difference time domain simulations and optical characterizations via micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode to be emitting at telecom C-band wavelengths. The simulated M1 Q-factor values exceed 106, while the M1 mode volume is found to be 0.33 × (λ/n)3, which is less than half the value of the M1 mode volume of a comparable L3 cavity. Low-temperature micro-photoluminescence measurements revealed experimental M1 Q-factor values on the order of 104 with emission wavelengths around 1.55 µm. Weak coupling behavior of the QD exciton line and the M1 ground mode was achieved via temperature-tuning experiments.

Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers.

Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated. Due to the reduced size inhomogeneity and a high dot density of the newest generation of 1.55 µm QD gain materials, ridge waveguide lasers (RWG) exhibit improved temperature stability and record-high modulation characteristics. Detailed results are shown for the temperature dependence of static properties including threshold current, voltage-current characteristics, external differential efficiency and emission wavelength. Similarly, small and large signal modulations were found to have only minor dependences on temperature. Moreover, we show the impact of the active region design and the cavity length on the temperature stability. Measurements were performed in pulsed and continuous wave operation. High characteristic temperatures for the threshold current were obtained with T0 values of 144 K (15 - 60 °C), 101 K (60 - 110 °C) and 70 K up to 180 °C for a 900-µm-long RWG laser comprising 8 QD layers. The slope efficiency in these lasers is nearly independent of temperature showing a T1 value of more than 900 K up to 110 °C. Due to the high modal gain, lasers with a cavity length of 340 µm reached new record modulation bandwidths of 17.5 GHz at 20 °C and 9 GHz at 80 °C, respectively. These lasers were modulated at 26 GBit/s in the non-return to zero format at 80 °C and at 25 GBaud using a four-level pulse amplitude format at 21 °C.

Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures.

We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain wavelength at a rate of 0.78 nm/K is observed. Consequently, two possible modes of operation are performed for a systematic device characterization over the entire temperature range. In the first mode, the signal wavelength is tuned to always match the peak gain wavelength while in the second mode, the signal wavelength is kept constant as the gain spectrum shifts with the temperature. Static characteristics, such as gain spectra and saturation levels, as well as dynamical properties, are presented. Distortion-less amplification of a single 28 Gbit/s signal and cross-talk free amplification of two channels, detuned by 2 nm, were demonstrated over the entire temperature range.

Coherent control in a semiconductor optical amplifier operating at room temperature.

Quantum decoherence times in semiconductors are extremely short, particularly at room temperature where the quantum phase is completely erased in a fraction of a picosecond. However, they are still of finite duration during which the quantum phase is well defined and can be tailored. Recently, we demonstrated that quantum coherent phenomena can be easily accessed by examining the phase and amplitude of an optical pulse following propagation along a room temperature semiconductor optical amplifier. Taking the form of Rabi oscillations, these recent observations enabled to decipher the time evolution of the ensemble states. Here we demonstrate the Ramsey analogous experiment known as coherent control. Remarkably, coherent control occurs even under room temperature conditions and enables to directly resolve the dephasing times. These results may open a new way for the realization of room temperature semiconductor-based ultra-high speed quantum processors with all the advantages of upscaling and low-cost manufacturing.

Nonlinear pulse propagation in a quantum dot laser.

We investigate the nonlinear propagation of an ultra-short, 150 fs, optical pulse along the waveguide of a quantum dot (QD) laser operating above threshold. We demonstrate that among the various nonlinear processes experienced by the propagating pulse, four-wave mixing (FWM) between the pulse and the two oscillating counter-propagating cw fields of the laser is the dominant one. FWM has two important consequences. One is the creation of a spectral hole located in the vicinity of the cw oscillating frequency. The width of the spectral hole is determined by an effective carrier and gain relaxation time. The second is a modification of the shape of the trailing edge of the pulse. The wave mixing involves first and second order processes which result in a complicated interaction among several fields inside the cavity, some of which are cw while the others are time varying, all propagating in both directions. The nonlinear pulse propagation is analyzed using two complementary theoretical approaches. One is a semi-analytical model which considers only the wave mixing interaction between six field components, three of which propagate in each direction (two cw fields and four time-varying signals). This model predicts the deformation of the tail of the output signal by a secondary idler wave, produced in a cascaded FWM process, which co-propagates with the original injected pulse. The second approach is a finite-difference time-domain simulation, which considers also additional nonlinear effects, such as gain saturation and self-phase modulation. The theoretical results are confirmed by a series of experiments in which the time dependent amplitude and phase of the pulse after propagation are measured using the cross-frequency-resolved optical gating technique.

Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm.

We demonstrate a direct observation of the coherent noise spectral hole in a saturated quantum dash amplifier. Its width 500-600 GHz is determined by the response time and is responsible for high speed regeneration properties.

Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier.

We demonstrate multi wavelength processing in a broad band 1550 nm quantum dash optical amplifier. Two 10 Gbit/s signals, spectrally separated by 30 nm are individually wavelength converted via four wave mixing (FWM) with no cross talk. High power signal levels cause depletion of high energy and wetting layer states resulting in some homogenizing of the gain medium and generation of cross FWM components near each channel due to FWM in the other channel. These do not affect the cross-talkless multichannel processing except when the two channels use equal detuning between signal and pump.

Coherent photonic coupling of semiconductor quantum dots.

We report a new type of coupling between quantum dot excitons mediated by the strong single-photon field in a high-finesse micropillar cavity. Coherent exciton coupling is observed for two dots with energy differences of the order of the exciton-photon coupling. The coherent coupling mode is characterized by an anticrossing with a particularly large line splitting of 250 microeV. Because of the different dispersion relations with temperature, the simultaneous photonic coupling of quantum dot excitons can be easily distinguished from cases of sequential strong coupling of two quantum dots.

Control of vertically coupled InGaAs/GaAs quantum dots with electric fields.

Controllable interactions that couple quantum dots are a key requirement in the search for scalable solid state implementations for quantum information technology. From optical studies of excitons and corresponding calculations, we demonstrate that an electric field on vertically coupled pairs of In(0.6)Ga(0.4)As/GaAs quantum dots controls the mixing of the exciton states on the two dots and also provides controllable coupling between carriers in the dots.

Strong coupling in a single quantum dot-semiconductor microcavity system.

Cavity quantum electrodynamics, a central research field in optics and solid-state physics, addresses properties of atom-like emitters in cavities and can be divided into a weak and a strong coupling regime. For weak coupling, the spontaneous emission can be enhanced or reduced compared with its vacuum level by tuning discrete cavity modes in and out of resonance with the emitter. However, the most striking change of emission properties occurs when the conditions for strong coupling are fulfilled. In this case there is a change from the usual irreversible spontaneous emission to a reversible exchange of energy between the emitter and the cavity mode. This coherent coupling may provide a basis for future applications in quantum information processing or schemes for coherent control. Until now, strong coupling of individual two-level systems has been observed only for atoms in large cavities. Here we report the observation of strong coupling of a single two-level solid-state system with a photon, as realized by a single quantum dot in a semiconductor microcavity. The strong coupling is manifest in photoluminescence data that display anti-crossings between the quantum dot exciton and cavity-mode dispersion relations, characterized by a vacuum Rabi splitting of about 140 microeV.