RESUMO
Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy-grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of an external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 µeV/T2, and 8-15 µeV/T2, respectively out-of-plane and in-plane of the dots. The determined values of diamagnetic shifts are related to the anisotropy of dot sizes. Trion g-factors are measured to be relatively small, in the range of 0.3-0.7 and 0.5-1.3, in both configurations, respectively. Analysis of single carrier g-factors, based on the formalism of spin-correlated orbital currents, leads to similar values for hole and electron of ~0.25 for Voigt and ge ≈ -5; gh ≈ +6 for Faraday configuration of the magnetic field. Values of g-factors close to zero measured in Voigt configuration make the investigated dots promising for electrical tuning of the g-factor sign, required for schemes of single spin control in qubit applications.
RESUMO
Within this work, a modified preparation of diethyl 4-azidobenzylphosphonate (L1) is presented and the family of 4- or 4'-azido-substituted aromatic phosphonate esters is increased by three new ligand platforms: diisopropyl 4-azidobenzylphosphonate (L2), diisopropyl ((4'-azido-[1,1'-biphenyl]-4-yl)methyl)phosphonate (L3), and diisopropyl 4-azido-2,3,5,6-tetrafluorobenzylphosphonate (L4), which exhibit an anomalous splitting of the N3 stretching vibrations. Subsequent coordination to the in situ generated RPOSS (polyhedral oligomeric silsesquioxane)-cage-supported lanthanide precursors [(Ln{RPOSS})2(THF)m] (P1-P6) (Ln = La, Nd, Dy, Er; R = iBu, Ph; m = 0, 1) yields complexes of the general formula [Ln{RPOSS}(L1-L4)n(S1)x(THF)m] (1-30) (n = 2, 3; x = 0, 1; m = 0-2) retaining the azide unit for future semiconductor surface immobilization. Because the latter compounds are mostly oils or viscous waxes, preliminary solution-state structure elucidations via DOSY-ECC-MW estimations have been carried out which are in accordance with 1H NMR integral ratios as well as solid-state structures, where available. Moreover, the optical properties of the Nd, Dy, and Er derivatives of complexes 1-30 are examined in the visible and NIR spectral regions, where applicable.
RESUMO
We investigate a hybrid system containing an In0.53Ga0.47As quantum well (QW), separated by a thin 2 nm In0.53Ga0.23Al0.24As barrier from 1.55 µm emitting InAs quantum dots (QDs), grown by molecular beam epitaxy on an InP substrate. Photoreflectance and photoluminescence (PL) spectroscopies are used to identify optical transitions in the system, with support of 8-band kp modelling. The main part of the work constitute the measurements and analysis of thermal quenching of PL for a set of samples with different QW widths (3-6 nm). Basing on Arrhenius plots, carrier escape channels from the dots are identified, pointing at the importance of carrier escape into the QW. A simple two level rate equations model is proposed and solved, exhibiting qualitative agreement with experimental observations. We show that for a narrow QW the escape process is less efficient than carrier supply via the QW due to the narrow barrier, resulting in improved emission intensity at room temperature. It proves that with carefully designed energy level structure, a hybrid QW/QD system can be used as an active region in telecom lasers with improved efficiencies.
