[Preparation of Functional Attapulgite Composite and Its Adsorption Behaviors for Congo Red].

Heavy metal ion wastewater poses a serious threat to human health and the environment. The adsorption method is an important method to remove heavy metal ions from heavy metal wastewater. Magnetic attapulgite (ATP) composite nanomaterials with excellent adsorption properties were prepared by grafting the Fe3O4 nanoparticles and using 3-aminopropyl triethoxy silane (APTES) modification. The prepared ATP-Fe3O4-APTES materials were used as adsorbents and applied to the treatment of heavy metal ion wastewater. The structure and surface properties of the materials were characterized by FT-IR, XRD, SEM, TEM, and BET characterization, Zeta potential, and VSM. The effects of pH, adsorption time, adsorption temperature, and initial concentration of Pb2+ on the adsorption properties of the ATP-Fe3O4-PEI materials were investigated. The results show that the maximum adsorption capacity of the materials for Pb2+ was 129.32 mg·g-1 under optimum conditions. The adsorption process conformed to the pseudo second order kinetic model and Langmuir adsorption isotherm, which indicates that the adsorption of Pb2+ is a monolayer chemical adsorption and a spontaneous endothermic process. The driving force of adsorption mainly comes from the coordination between the amino group (-NH2) on the ATP-Fe3O4-APTES surface and Pb2+. These results indicate that the functionalized magnetic attapulgite adsorbent has good adsorption properties for heavy metal ions and is expected to be used in the treatment of heavy metal ion wastewater.

Highly Efficient and Thermally Stable Eu2+-Doped Ca9Nd(PO4)7 Phosphor for Near-Ultraviolet White-Emission LED Applications.

Various Eu2+-based Ca9Nd(PO4)7 (CNP:xEu2+, with different x values) materials are prepared via facile solid-state reaction. Their crystal structures are investigated in detail by means of the Rietveld refinement. The structure of CNP:Eu2+ with a trigonal lattice is analogous to that of ß-Ca3(PO4)2. Therefore, Eu2+ ions tend to incorporate calcium sites in the host. All the obtained samples can be excited using near ultraviolet (nUV) light to present blue-green emission. An optimal dopant concentration is verified at x = 0.8 with a large critical interaction radius (11.21 Å). The mechanism of the concentration quenching effect is assigned to the multipole-multipole interaction. CNP:xEu2+ possesses a short decay lifetime of ∼60 µs and can endure severe working conditions thanks to its great thermal stability. The relative photoluminescence (PL) intensity of CNP:0.8Eu2+ can retain 84.75% of the pristine intensity measured at room temperature, and the relative intensity remains as high as 69.97% at 423 K. The CNP:Eu2+ phosphors also show great performance in the WLED demonstration. The correlated color temperature (CCT) of the prototype device is 3404 K, with an extremely high Ra (97.6). Therefore, CNP:xEu2+ could be regarded as a promising alternative to blue green phosphors in nUV chip-based WLED applications.

Compatibility of Photoluminescence Properties in ScPO4:Eu3+, Tb3+ Phosphor for White Light Emitting Diodes.

ScPO4:Eu3+, Tb3+ phosphors with tuned emission color were prepared through high temperature solid-state reaction. The structure, morphology and photoluminescence properties of the title samples were collected by XRD, SEM and fluorescence spectrophotometer, respectively. Co-doping Eu3+ and Tb3+ in ScPO4 does not change the body-centered tetragonal structure of the host. And the morphology remains essentially unchanged except for slight agglomeration. Changing the ratio of Tb3+/Eu3+, the tuned emission can be achieved, the color could be adjusted from green through yellow to orange-red. The ScPO4:0.03Tb3+, 0.03Eu3+ phosphor with high thermal stability as the single matrix phosphor can be suitable for the NUV-pumped white LED. The white LED with a color rendering index of 86.5 and a correlated color temperature of 3470 K has been generated by packaging BAM:Eu2+ with ScPO4:0.03Tb3+, 0.03Eu3+ on an NUV-InGaN chip.