How do we explain painful non-traumatic knee conditions to adolescents? A multiple-method study to develop credible explanations.

BACKGROUND: Perceived diagnostic uncertainty can leave adolescents confused about their condition and impede their ability to understand "what's wrong with me". Our aim is to develop credible explanations about the condition for adolescents suffering from non-traumatic knee pain. METHODS: This multiple-method study integrated findings from two systematic literature searches of qualitative and quantitative studies, an Argumentative Delphi with international experts (n = 16) and think-aloud interviews with adolescents (n = 16). Experts provided feedback with arguments on how to communicate credible explanations to meet adolescents' needs; we analysed feedback using thematic analysis. The explanations were tailored based on the adolescent end-users' input. RESULTS: We screened 3239 titles/abstracts and included 16 papers exploring diagnostic uncertainty from adolescents' and parents' perspectives. Five themes were generated: (1) understanding causes and contributors to the pain experience, (2) feeling stigmatized for having an invisible condition, (3) having a name for pain, (4) controllability of pain, and (5) worried about something being missed. The Argumentative Delphi identified the following themes: (1) multidimensional perspective, (2) tailored to adolescents, (3) validation and reassurance, and (4) careful wording. Merging findings from the systematic search and the Delphi developed three essential domains to address in credible explanations: "What is non-traumatic knee pain and what does it mean?", "What is causing my knee pain?" and "How do I manage my knee pain?" CONCLUSIONS: Six credible explanations for the six most common diagnoses of non-traumatic knee pain were developed. We identified three domains to consider when tailoring credible explanations to adolescents experiencing non-traumatic knee pain. SIGNIFICANCE: This study provides credible explanations for the six most common diagnoses of non-traumatic knee pain. Additionally, we identified three key domains that may need to be addressed to reduce diagnostic uncertainty in adolescents suffering from pain complaints. Based on our findings, we believe that clinicians will benefit from exploring adolescents' own perceptions of why they experience pain and perceived management strategies, as this information might capture important clinical information when managing these young individuals.

Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs.

We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature T^{*} is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate damping, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, T^{*} is also tuned by a magnetic flux.

Out-of-equilibrium phonons in gated superconducting switches.

Recent experiments have suggested that superconductivity in metallic nanowires can be suppressed by the application of modest gate voltages. The source of this gate action has been debated and either attributed to an electric-field effect or to small leakage currents. Here we show that the suppression of superconductivity in titanium nitride nanowires on silicon substrates does not depend on the presence or absence of an electric field at the nanowire, but requires a current of high-energy electrons. The suppression is most efficient when electrons are injected into the nanowire, but similar results are obtained when electrons are passed between two remote electrodes. This is explained by the decay of high-energy electrons into phonons, which propagate through the substrate and affect superconductivity in the nanowire by generating quasiparticles. By studying the switching probability distribution of the nanowire, we also show that high-energy electron emission leads to a much broader phonon energy distribution compared with the case where superconductivity is suppressed by Joule heating near the nanowire.

A superconducting switch actuated by injection of high-energy electrons.

Recent experiments with metallic nanowires devices seem to indicate that superconductivity can be controlled by the application of electric fields. In such experiments, critical currents are tuned and eventually suppressed by relatively small voltages applied to nearby gate electrodes, at odds with current understanding of electrostatic screening in metals. We investigate the impact of gate voltages on superconductivity in similar metal nanowires. Varying materials and device geometries, we study the physical mechanism behind the quench of superconductivity. We demonstrate that the transition from superconducting to resistive state can be understood in detail by tunneling of high-energy electrons from the gate contact to the nanowire, resulting in quasiparticle generation and, at sufficiently large currents, heating. Onset of critical current suppression occurs below gate currents of 100fA, which are challenging to detect in typical experiments.

Noise spectroscopy to study the 1D electron transport properties in InAs nanowires.

InAs nanowires (NWs) are recognized as a key material due to their unique transport properties. Despite remarkable progress in designing InAs NW device structures, there are still open questions on device variability. Here, we demonstrate that noise spectroscopy allows us to study not only the parameters of traps, but also to shed light on quantum transport in NW structures. This provides an important understanding of structural behavior as well as the background and strategy required to design NW structures with advanced properties.

An open-source platform to study uniaxial stress effects on nanoscale devices.

We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of the uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the platform is demonstrated by characterizing the piezo-resistance of an InAs nanowire device using a combination of electrical transport and Raman spectroscopy. The advantages of this measurement platform are highlighted by comparison with state-of-the-art piezo-resistance measurements in InAs nanowires. We envision that the systematic application of this methodology will provide new insights into the physics of nanoscale devices and novel materials for electronics, and thus contribute to the assessment of the potential of strain as a technology booster for nanoscale electronics.

Manipulating Surface States of III-V Nanowires with Uniaxial Stress.

III-V compound semiconductors are indispensable materials for today's high-end electronic and optoelectronic devices and are being explored for next-generation transistor logic and quantum technologies. III-V surfaces and interfaces play the leading role in determining device performance, and therefore, methods to control their electronic properties have been developed. Typically, surface passivation studies demonstrated how to limit the density of surface states. Strain has been widely used to improve the electronic transport properties and optoelectronic properties of III-Vs, but the potential of this technology to modify the surface properties still remains to be explored. Here we show that uniaxial stress induces a shift in the energy of the surface states of III-V nanowires, modifying their electronic properties. We demonstrate this phenomenon by modulating the conductivity of InAs nanowires over 4 orders of magnitude with axial strain ranging between -2.5% in compression and 2.1% in tension. The band bending at the surface of the nanostructure is modified from accumulation to depletion reversibly and reproducibly. We provide evidence of this physical effect using a combination of electrical transport measurement, Raman spectroscopy, band-structure modeling, and technology computer aided design (TCAD) simulations. With this methodology, the deformation potentials for the surface states are quantified. These results reveal that strain technology can be used to shift surface states away from energy ranges in which device performance is negatively affected and represent a novel route to engineer the electronic properties of III-V devices.

Length-dependent thermal transport along molecular chains.

We present heat-transport measurements conducted with a vacuum-operated scanning thermal microscope to study the thermal conductance of monolayers of nine different alkane thiols self-assembled on Au(111) surfaces as a function of their length (2 to 18 methylene units). The molecular thermal conductance is probed in a confined area with a diameter below 10 nm in the contact between a silicon tip and the self-assembled monolayer. This yields a pWK(-1) sensitivity per molecule at a tip temperature of 200-300 °C versus the gold at room temperature. We found a conductance variance of up to a factor of 3 as a function of alkane chain length, with maximum conductance for a chain length of four carbon atoms.

Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors.

Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K(-1) with a measurements sensitivity below 20 nW K(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W (m K)(-1) to 2.3 W (m K)(-1).

Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress.

Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less known pseudodirect bandgap configuration can be found in wurtzite (WZ) semiconductors: here electron and hole wave-functions overlap strongly but optical transitions between these states are impaired by symmetry. Switching between bandgap configurations would enable novel photonic applications but large anisotropic strain is normally needed to induce such band structure transitions. Here we show that the luminescence of WZ GaAs nanowires can be switched on and off, by inducing a reversible direct-to-pseudodirect band structure transition, under the influence of a small uniaxial stress. For the first time, we clarify the band structure of WZ GaAs, providing a conclusive picture of the energy and symmetry of the electronic states. We envisage a new generation of devices that can simultaneously serve as efficient light emitters and photodetectors by leveraging the strain degree of freedom.

Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors.

In this work we investigate doping by solid-state diffusion from a doped oxide layer, obtained by plasma-enhanced chemical vapor deposition (PECVD), as a means for selectively doping silicon nanowires (NWs). We demonstrate both n-type (phosphorous) and p-type (boron) doping up to concentrations of 10(20) cm(-3), and find that this doping mechanism is more efficient for NWs as opposed to planar substrates. We observe no diameter dependence in the range of 25 to 80 nm, which signifies that the NWs are uniformly doped. The drive-in temperature (800-950 °C) can be used to adjust the actual doping concentration in the range 2 × 10(18) to 10(20) cm(-3). Furthermore, we have fabricated NMOS and PMOS devices to show the versatility of this approach and the possibility of achieving segmented doping of NWs. The devices show high I(on)/I(off) ratios of around 10(7) and, especially for the PMOS, good saturation behavior and low hysteresis.