RESUMO
We describe the structure, fabrication, and measured performance of a 1543â nm wavelength photonic crystal surface emitting laser. An asymmetric double lattice design was used to achieve single mode lasing with side mode suppression ratios >40â dB. The photonic crystal was formed using encapsulated air holes in an n-doped InGaAsP layer with an InGaAlAs active layer then grown above it. In this way a laser with a low series resistance of 0.32 Ω capable of pulsed output powers of 171â mW at 25 °C and 40â mW at 85 °C was demonstrated.
RESUMO
Catalyst-free, selective nano-epitaxy of III-V nanowires provides an excellent materials platform for designing and fabricating ultra-compact, bottom-up photonic crystal lasers. In this work, we propose a new type of photonic crystal laser with a curved cavity formed by InGaAs nanowires grown directly on silicon-on-insulator. This paper investigates the effect of the radius of the curved cavity on the emission wavelength, quality factor as well as laser beam emission angle. We find that the introduction of curvature does not degrade the quality factor of the cavity, thereby offering another degree of freedom when designing low-footprint multiwavelength photonic crystal nanowire lasers. The experimentally demonstrated device shows a lasing threshold of 157 µJ/cm2 at room temperature at telecom O-band wavelengths.