High-Throughput Mechanical Exfoliation for Low-Cost Production of van der Waals Nanosheets.

A method is presented for scaling up the production of flakes of van der Waals materials via mechanical exfoliation. Using a roll-to-roll setup and an automatized, massive parallel exfoliation process, adhesive tapes with a high density of nanosheets of van der Waals materials are produced. The technique allows for obtaining a good trade-off between large lateral size and excellent area scalability, while also maintaining low cost. The potential of the method is demonstrated through the successful fabrication of field effect transistors and flexible photodetectors in large batches. This low-cost method to produce large area films out of mechanically exfoliated flakes is very general, and it can be applied to a variety of substrates and van der Waals materials and, moreover, it can be used to combine different van der Waals materials on top of each other. Therefore, it is believed that this production method opens an interesting avenue for fabrication of low-cost devices while maintaining a good scalability and performance.

Large Magnetoresistance of Isolated Domain Walls in La2/3 Sr1/3 MnO3 Nanowires.

Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half-metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La1- x Srx MnO3 (LSMO) manganites are considered as promising candidates for their robust half-metallic ground state, Curie temperature above room temperature (Tc = 360 K, for x = 1/3), and chemical stability. Yet domain wall magnetoresistance is poorly understood, with large discrepancies in the reported values and conflicting interpretation of experimental data due to the entanglement of various source of magnetoresistance, namely, spin accumulation, anisotropic magnetoresistance, and colossal magnetoresistance. In this work, the domain wall magnetoresistance is measured in LSMO cross-shape nanowires with single-domain walls nucleated across the current path. Magnetoresistance values above 10% are found to be originating at the spin accumulation caused by the mistracking effect of the spin texture of the domain wall by the conduction electrons. Fundamentally, this result shows the importance on non-adiabatic processes at spin textures despite the strong Hund coupling to the localized t2g electrons of the manganite. These large magnetoresistance values are high enough for encoding and reading magnetic bits in future oxide spintronic sensors.