Engineering the Electrical and Optical Properties of WS2 Monolayers via Defect Control.

Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.

Understanding the role of imidazolium-based ionic liquids in the electrochemical CO2 reduction reaction.

The development of efficient CO2 capture and utilization technologies driven by renewable energy sources is mandatory to reduce the impact of climate change. Herein, seven imidazolium-based ionic liquids (ILs) with different anions and cations were tested as catholytes for the CO2 electrocatalytic reduction to CO over Ag electrode. Relevant activity and stability, but different selectivities for CO2 reduction or the side H2 evolution were observed. Density functional theory results show that depending on the IL anions the CO2 is captured or converted. Acetate anions (being strong Lewis bases) enhance CO2 capture and H2 evolution, while fluorinated anions (being weaker Lewis bases) favour the CO2 electroreduction. Differently from the hydrolytically unstable 1-butyl-3-methylimidazolium tetrafluoroborate, 1-Butyl-3-Methylimidazolium Triflate was the most promising IL, showing the highest Faradaic efficiency to CO (>95%), and up to 8 h of stable operation at high current rates (-20 mA & -60 mA), which opens the way for a prospective process scale-up.

Stability and Bandgap Engineering of In1-xGaxSe Monolayer.

Bandgap engineering of semiconductor materials represents a crucial step for their employment in optoelectronics and photonics. It offers the opportunity to tailor their electronic and optical properties, increasing the degree of freedom in designing new devices and widening the range of their possible applications. Here, we report the bandgap engineering of a layered InSe monolayer, a superior electronic and optical material, by substituting In atoms with Ga atoms. We developed a theoretical understanding of In1-xGaxSe stability and electronic properties in its whole compositional range (x=0-1) through first-principles density functional theory calculations, the cluster expansion method, and kinetic Monte Carlo simulations. Our findings highlight the possibility of modulating the InGaSe bandgap by ≈0.41 eV and reveal that this compound is an excellent candidate to be employed in many optoelectronic and photonic devices.

Point Defects in Two-Dimensional Indium Selenide as Tunable Single-Photon Sources.

In the past few years remarkable interest has been kindled by the development of nonclassical light sources and, in particular, of single-photon emitters (SPE), which represent fundamental building blocks for optical quantum technology. In this Letter, we analyze the stability and electronic properties of an InSe monolayer with point defects with the aim of demonstrating its applicability as an SPE. The presence of deep defect states within the InSe band gap is verified when considering substitutional defects with atoms belonging to group IV, V, and VI. In particular, the optical properties of Ge as substitution impurity of Se predicted by solving the Bethe-Salpeter equation on top of the GW corrected electronic states show that transitions between the valence band maximum and the defect state are responsible for the absorption and spontaneous emission processes, so that the latter results in a strongly peaked spectrum in the near-infrared. These properties, together with a high localization of the involved electronic states, appear encouraging in the quest for novel SPE materials.

Unravelling Some of the Structure-Property Relationships in Graphene Oxide at Low Degree of Oxidation.

Graphene oxide (GO) is a versatile 2D material whose properties can be tuned by changing the type and concentration of oxygen-containing functional groups attached to its surface. However, a detailed knowledge of the dependence of the chemo/physical features of this material on its chemical composition is largely unknown. We combine classical molecular dynamics and density functional theory simulations to predict the structural and electronic properties of GO at low degree of oxidation and suggest a revision of the Lerf-Klinowski model. We find that layer deformation is larger for samples containing high concentrations of epoxy groups and that correspondingly the band gap increases. Targeted chemical modification of the GO surface appears to be an effective route to tailor the electronic properties of the monolayer for given applications. Our simulations also show that the chemical shift of the C-1s XPS peak allows one to unambiguously characterize GO composition, resolving the peak attribution  uncertainty often encountered in experiments.

A New Theoretical Insight Into ZnO NWs Memristive Behavior.

Resistive switching memory operation is generally described in terms of formation and rupture of a conductive filament connecting two metal electrodes. Although this model was reported for several device types, its applicability is not guaranteed to all of them. On the basis of density functional theory calculations, we propose a novel switching mechanism suitable to nanowire-based resistive switching memories. For thick devices in particular, the current is highly unlikely to flow through a metallic filament connecting the electrodes. We demonstrate that in the case of ZnO nanowires metal adatoms, spread on the nanowire surface, locally dope the insulating oxide allowing surface conductance even for small metal concentrations.

Combined experimental and theoretical investigation of the hemi-squaraine/TiO2 interface for dye sensitized solar cells.

A simple hemi-squaraine dye (CT1) has been studied as a TiO2 sensitizer for application in dye sensitized solar cells (DSCs) by means of a combined experimental and theoretical investigation. This molecule is a prototype dye presenting an innovative anchoring group: the squaric acid moiety. Ab initio calculations based on Density Functional Theory (DFT) predict that this acid spontaneously deprotonates at the anatase (101) surface forming chemical bonds that are stronger than the ones formed by other linkers (e.g. cathecol and isonicotinic acid). Moreover an analysis of the electronic structure of the hybrid interface reveals the formation of a type II heterostructure ensuring adiabatic electron transfer from the molecule to the oxide. DSCs containing hemi-squaraine dyes were assembled, characterized and their performances compared to state of the art cells. Experimental results (large incident photon-to-electron conversion efficiency and an efficiency of 3.54%) confirmed the theoretical prediction that even a simple hemi-squaraine is an effective sensitizer for TiO2. Our study paves the way to the design of more efficient sensitizers based on a squaric acid linker and specifically engineered to absorb light in a larger part of the visible range.