RESUMO
Magnetic silicene junctions are versatile structures with spin-valley polarization and magnetoresistive capabilities. Here, we investigate the temperature eï¬ects on the transport properties of single magnetic silicene junctions. We use the transfer matrix method and the Landauer-Büttiker formalism to calculate the transmittance, conductance, spin-valley polarization and tunneling magnetoresistance. We studied the case for T = 0 K, ï¬nding the speciï¬c parameters where the spin-valley polarization and the tunneling magnetoresistance reach optimized values. Regarding the temperature eï¬ects, we ï¬nd that its impact is not the same on the diï¬erent transport properties. In the case of the conductance, depending on the spin-valley conï¬guration the resonant peaks disappear at diï¬erent temperatures. The spin polarization persists at a considerable value up to T=80 K, contrary to the valley polarization which is more susceptible to the temperature eï¬ects. In addition, a stepwise spin-valley polarization can be achieved at low temperature. The tunneling magnetoresistance is attenuated considerably as the temperature rises, decreasing more than two orders of magnitude after T=20 K. These ï¬ndings indicate that in order to preserve the spin-valley polarization and magnetoresistive capabilities of magnetic silicene junctions is fundamental to modulate the temperature adequately.