1.
Opt Lett
; 42(23): 4889-4892, 2017 Dec 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-29216136
RESUMO
The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7×1016 cm-3) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm-1 and a pulse duration of 700 fs. A huge transmittance enhancement of â¼90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MV cm-1.