Revealing the interaction mechanism of pulsed laser processing with the application of acoustic emission.

The mechanisms of interaction between pulsed laser and materials are complex and indistinct, severely influencing the stability and quality of laser processing. This paper proposes an intelligent method based on the acoustic emission (AE) technique to monitor laser processing and explore the interaction mechanisms. The validation experiment is designed to perform nanosecond laser dotting on float glass. Processing parameters are set differently to generate various outcomes: ablated pits and irregular-shaped cracks. In the signal processing stage, we divide the AE signals into two bands, main and tail bands, according to the laser processing duration, to study the laser ablation and crack behavior, respectively. Characteristic parameters extracted by a method that combines framework and frame energy calculation of AE signals can effectively reveal the mechanisms of pulsed laser processing. The main band features evaluate the degree of laser ablation from the time and intensity scales, and the tail band characteristics demonstrate that the cracks occur after laser dotting. In addition, from the analysis of the parameters of the tail band very large cracks can be efficiently distinguished. The intelligent AE monitoring method was successfully applied in exploring the interaction mechanism of nanosecond laser dotting float glass and can be used in other pulsed laser processing fields.

Crack growth analysis of ultraviolet nanosecond laser scanning glass with acoustic emission.

Undesirable crossing crack defects are prone to occur in the laser processing of glass, but a comprehensive analysis of the crack mechanism is absent. We apply an acoustic emission (AE) monitoring technique in the glass's laser scanning to reveal the crack phenomenon. A two-step experiment (single-line and multi-line scanning) is designed to present the crossing crack's occurrence and growth, and the corresponding AE signals are collected and analyzed in different domains. The time-domain AE feature (root mean square) correlates strongly with the laser ablation intensity in the single-line scanning experiment, and the frequency content of 150 âˆ¼ 200 kHz is extracted as the crack characteristic in the multi-line experiment. The crossing crack growth is proved to be generated by the rapid release of thermal stress in the overlapped heat-affected zone by a brief mechanism discussion. This paper interprets the crack behavior in glass's laser scanning and provides a basis for other monitoring research on laser processing.

Effects of Ambient Temperature on Nanosecond Laser Micro-Drilling of Polydimethylsiloxane (PDMS).

In this research, effects of ambient temperature (-100 °C-200 °C) on nanosecond laser micro-drilling of polydimethylsiloxane (PDMS) was investigated by simulation and experiment. A thermo-mechanical coupled model was established, and it was indicated that the top and bottom diameter of the micro-hole decreased with the decrease of the ambient temperature, and the micro-hole taper increased with the decrease of the ambient temperature. The simulation results showed a good agreement with the experiment results in micro-hole geometry; the maximum prediction errors of the top micro-hole diameter, the bottom micro-hole diameter and micro-hole taper were 2.785%, 6.306% and 9.688%, respectively. The diameter of the heat-affected zone decreased with the decrease of the ambient temperature. The circumferential wrinkles were controlled by radial compressive stress. As the ambient temperature increased from 25 °C to 200 °C, the radial compressive stress gradually decreased, which led to the circumferential wrinkles gradually evolving in the radial direction. This work provides a new idea and method based on ambient temperature control for nanosecond laser processing of PDMS, which provides exciting possibilities for a wider range of engineering applications of PDMS.

Editorial for the Special Issue on Advanced Materials, Structures and Processing Technologies Based on Pulsed Laser.

Pulsed lasers are lasers with a single laser pulse width of less than 0 [...].

Temperature Field-Assisted Ultraviolet Nanosecond Pulse Laser Processing of Polyethylene Terephthalate (PET) Film.

Understanding the mechanism of and how to improve the laser processing of polymer films have been important issues since the advent of the procedure. Due to the important role of a photothermal mechanism in the laser ablation of polymer films, especially in transparent polymer films, it is both important and effective to adjust the evolution of heat and temperature in time and space during laser processing by simply adjusting the ambient environment so as to improve and understand the mechanism of this procedure. In this work, studies on the pyrolysis of PET film and on temperature field-assisted ultraviolet nanosecond (UV-ns) pulse laser processing of polyethylene terephthalate (PET) film were performed to investigate the photothermal ablation mechanism and the effects of temperature on laser processing. The results showed that the UV-ns laser processing of PET film was dominated by the photothermal process, in which PET polymer chains decomposed, melted, recomposed and reacted with the ambient gases. The ambient temperature changed the heat transfer and temperature distribution in the laser processing. Low ambient temperature reduced the thermal effect and an increase in ambient temperature improved its efficiency (kerf width: 39.63 µm at -25 °C; 48.30 µm at 0 °C; 45.81 µm at 25 °C; 100.70 µm at 100 °C) but exacerbated the thermal effect.

PI Film Laser Micro-Cutting for Quantitative Manufacturing of Contact Spacer in Flexible Tactile Sensor.

The contact spacer is the core component of flexible tactile sensors, and the performance of this sensor can be adjusted by adjusting contact spacer micro-hole size. At present, the contact spacer was mainly prepared by non-quantifiable processing technology (electrospinning, etc.), which directly leads to unstable performance of tactile sensors. In this paper, ultrathin polyimide (PI) contact spacer was fabricated using nanosecond ultraviolet (UV) laser. The quality evaluation system of laser micro-cutting was established based on roundness, diameter and heat affected zone (HAZ) of the micro-hole. Taking a three factors, five levels orthogonal experiment, the optimum laser cutting process was obtained (pulse repetition frequency 190 kHz, cutting speed 40 mm/s, and RNC 3). With the optimal process parameters, the minimum diameter was 24.3 ± 2.3 µm, and the minimum HAZ was 1.8 ± 1.1 µm. By analyzing the interaction process between nanosecond UV laser and PI film, the heating-carbonization mechanism was determined, and the influence of process parameters on the quality of micro-hole was discussed in detail in combination with this mechanism. It provides a new approach for the quantitative industrial fabrication of contact spacers in tactile sensors.

Optimal Trajectory Planning for Wheeled Mobile Robots under Localization Uncertainty and Energy Efficiency Constraints.

With the rapid development of robotics, wheeled mobile robots are widely used in smart factories to perform navigation tasks. In this paper, an optimal trajectory planning method based on an improved dolphin swarm algorithm is proposed to balance localization uncertainty and energy efficiency, such that a minimum total cost trajectory is obtained for wheeled mobile robots. Since environmental information has different effects on the robot localization process at different positions, a novel localizability measure method based on the likelihood function is presented to explicitly quantify the localization ability of the robot over a prior map. To generate the robot trajectory, we incorporate localizability and energy efficiency criteria into the parameterized trajectory as the cost function. In terms of trajectory optimization issues, an improved dolphin swarm algorithm is then proposed to generate better localization performance and more energy efficiency trajectories. It utilizes the proposed adaptive step strategy and learning strategy to minimize the cost function during the robot motions. Simulations are carried out in various autonomous navigation scenarios to validate the efficiency of the proposed trajectory planning method. Experiments are performed on the prototype "Forbot" four-wheel independently driven-steered mobile robot; the results demonstrate that the proposed method effectively improves energy efficiency while reducing localization errors along the generated trajectory.

A new approach for an ultrasensitive tactile sensor covering an ultrawide pressure range based on the hierarchical pressure-peak effect.

Flexible tactile sensors that imitate the skin tactile system have attracted extensive research interest due to their potential applications in medical diagnosis, intelligent robots and so on. However, it is still a great challenge to date to fabricate tactile sensors with both high sensitivity and wide detection range due to the difficulties in modulating the resistance variation in the sensing materials in a wide pressure range. Here, a tactile sensor with a novel design based on the hierarchical pressure-peak effect (HPPE) consisting of PVP nanowires and electroless deposition (ELD) silver PDMS micro-pyramids is reported. The HPPE can effectively modulate the resistance change rate by adjusting the change of contact area during compression deformation, and the HPPE tactile sensor was demonstrated to have both ultrahigh sensitivity (11.60-1108.75 kPa-1) and ultrawide pressure range (0.04-600 kPa). The designed HPPE tactile sensor is successfully utilized in detecting multi-level pressures including respiration, finger heart rate, pulse and foot pressures. Moreover, it is used to sense a subtle clamping force in the Leonardo Da Vinci surgical robot demonstrating the potential of the sensor in surgical robot applications. In all these cases, the sensor exhibits enough capability to respond quickly to ultrawide-range pressures with high accuracy and stability.

High Coulombic efficiency aluminum-ion battery using an AlCl3-urea ionic liquid analog electrolyte.

In recent years, impressive advances in harvesting renewable energy have led to a pressing demand for the complimentary energy storage technology. Here, a high Coulombic efficiency (∼99.7%) Al battery is developed using earth-abundant aluminum as the anode, graphite as the cathode, and a cheap ionic liquid analog electrolyte made from a mixture of AlCl3 and urea in a 1.3:1 molar ratio. The battery displays discharge voltage plateaus around 1.9 and 1.5 V (average discharge = 1.73 V) and yielded a specific cathode capacity of ∼73 mAh g-1 at a current density of 100 mA g-1 (∼1.4 C). High Coulombic efficiency over a range of charge-discharge rates and stability over ∼150-200 cycles was easily demonstrated. In situ Raman spectroscopy clearly showed chloroaluminate anion intercalation/deintercalation of graphite (positive electrode) during charge-discharge and suggested the formation of a stage 2 graphite intercalation compound when fully charged. Raman spectroscopy and NMR suggested the existence of AlCl4-, Al2Cl7- anions and [AlCl2·(urea)n]+ cations in the AlCl3/urea electrolyte when an excess of AlCl3 was present. Aluminum deposition therefore proceeded through two pathways, one involving Al2Cl7- anions and the other involving [AlCl2·(urea)n]+ cations. This battery is a promising prospect for a future high-performance, low-cost energy storage device.

Revealing Defect-State Photoluminescence in Monolayer WS2 by Cryogenic Laser Processing.

Understanding the stability of monolayer transition metal dichalcogenides in atmospheric conditions has important consequences for their handling, life-span, and utilization in applications. We show that cryogenic photoluminescence spectroscopy (PL) is a highly sensitive technique to the detection of oxidation induced degradation of monolayer tungsten disulfide (WS2) caused by exposure to ambient conditions. Although long-term exposure to atmospheric conditions causes massive degradation from oxidation that is optically visible, short-term exposure produces no obvious changes to the PL or Raman spectra measured at either room temperature or even cryogenic environment. Laser processing was employed to remove the surface adsorbents, which enables the defect states to be detected via cryogenic PL spectroscopy. Thermal cycling to room temperature and back down to 77 K shows the process is reversible. We also monitor the degradation process of WS2 using this method, which shows that the defect related peak can be observed after one month aging in ambient conditions.

Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition.

We study the interactions in graphene/WS2 two-dimensional (2D) layered vertical heterostructures with variations in the areal coverage of graphene by the WS2. All 2D materials were grown by chemical vapor deposition and transferred layer by layer. Photoluminescence (PL) spectroscopy of WS2 on graphene showed PL quenching along with an increase in the ratio of exciton/trion emission, relative to WS2 on SiO2 surface, indicating a reduction in the n-type doping levels of WS2 as well as reduced radiative recombination quantum yield. Electrical measurements of a total of 220 graphene field effect transistors with different WS2 coverage showed double-Dirac points in the field effect measurements, where one is shifted closer toward the 0 V gate neutrality position due to the WS2 coverage. Photoirradiation of the WS2 on graphene region caused further Dirac point shifts, indicative of a reduction in the p-type doping levels of graphene, revealing that the photogenerated excitons in WS2 are split across the heterostructure by electron transfer from WS2 to graphene. Kelvin probe microscopy showed that regions of graphene covered with WS2 had a smaller work function and supports the model of electron transfer from WS2 to graphene. Our results demonstrate the formation of junctions within a graphene transistor through the spatial tuning of the work function of graphene using these 2D vertical heterostructures.

Biexciton Formation in Bilayer Tungsten Disulfide.

Monolayer transition metal dichalcogenides (TMDs) are direct band gap semiconductors, and their 2D structure results in large binding energies for excitons, trions, and biexcitons. The ability to explore many-body effects in these monolayered structures has made them appealing for future optoelectronic and photonic applications. The band structure changes for bilayer TMDs with increased contributions from indirect transitions, and this has limited similar in-depth studies of biexcitons. Here, we study biexciton emission in bilayer WS2 grown by chemical vapor deposition as a function of temperature. A biexciton binding energy of 36 ±4 meV is measured in the as-grown bilayer WS2 containing 0.4% biaxial strain as determined by Raman spectroscopy. The biexciton emission was difficult to detect when the WS2 was transferred to another substrate to release the stain. Density functional theory calculations show that 0.4% of tensile strain lowers the direct band gap by about 55 meV without significant change to the indirect band gap, which can cause an increase in the quantum yield of direct exciton transitions and the emission from biexcitons formed by two direct gap excitons. We find that the biexciton emission decreases dramatically with increased temperature due to the thermal dissociation, with an activation energy of 26 ± 5 meV. These results show how strain can be used to tune the many-body effects in bilayered TMD materials and extend the photonic applications beyond pure monolayer systems.

Mixed multilayered vertical heterostructures utilizing strained monolayer WS2.

Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by CVD directly on Si substrates with SiO2 surface are easily washed off by water and this makes aqueous based transfer methods challenging for creating vertical stacks on the growth substrate. 2D hexagonal Boron Nitride films are used to provide an insulating layer that limits interactions with a top graphene layer and preserve the strong photoluminescence from the WS2. This transfer method is suitable for layer by layer control of 2D material vertical stacks and is shown to be possible for all CVD grown samples, which opens up pathways for the rapid large scale fabrication of vertical heterostructure systems with atomic thickness depth control and large area coverage.

Electroluminescence Dynamics across Grain Boundary Regions of Monolayer Tungsten Disulfide.

We study how grain boundaries (GB) in chemical vapor deposition (CVD) grown monolayer WS2 influence the electroluminescence (EL) behavior in lateral source-drain devices under bias. Real time imaging of the WS2 EL shows arcing between the electrodes when probing across a GB, which then localizes at the GB region as it erodes under high bias conditions. In contrast, single crystal WS2 domains showed no signs of arcing or localized EL. Analysis of the eroded GB region shows the formation of micro- and nanoribbons across the monolayer WS2 domains. Comparison of the EL spectrum with the photoluminescence spectrum from the monolayer WS2 shows close agreement, indicating the EL emission comes from direct band gap excitonic recombination. These results provide important insights into EL devices that utilize CVD grown monolayer transition metal dichalcogenides when GBs are present in the active device region.

Uniformity of large-area bilayer graphene grown by chemical vapor deposition.

Graphene grown by chemical vapor deposition (CVD) on copper foils is a viable method for large area films for transparent conducting electrode (TCE) applications. We examine the spatial uniformity of large area films on the centimeter scale when transferred onto both Si substrates with 300 nm oxide and flexible transparent polyethylene terephthalate substrates. A difference in the quality of graphene, as measured by the sheet resistance and transparency, is found for the areas at the edges of large sheets that depends on the supporting boat used for the CVD growth. Bilayer graphene is grown with uniform properties on the centimeter scale when a flat support is used for CVD growth. The flat support provides consistent delivery of precursor to the copper catalyst for graphene growth. These results provide important insights into the upscaling of CVD methods for growing high quality graphene and its transfer onto flexible substrates for potential applications as a TCE.

Controlled preferential oxidation of grain boundaries in monolayer tungsten disulfide for direct optical imaging.

Synthetic 2D crystal films grown by chemical vapor deposition are typically polycrystalline, and determining grain size within domains and continuous films is crucial for determining their structure. Here we show that grain boundaries in the 2D transition metal dichalcogenide WS2, grown by CVD, can be preferentially oxidized by controlled heating in air. Under our developed conditions, preferential degradation at the grain boundaries causes an increase in their physical size due to oxidation. This increase in size enables their clear and rapid identification using a standard optical microscope. We demonstrate that similar treatments in an Ar environment do no show this effect, confirming that oxidation is the main role in the structural change. Statistical analysis of grain boundary (GB) angles shows dominant mirror formation. Electrical biasing across the GB is shown to lead to changes at the GB and their observation under an optical microscope. Our approach enables high-throughput screening of as-synthesized WS2 domains and continuous films to determine their crystallinity and should enable improvements in future CVD growth of these materials.

Layer-dependent modulation of tungsten disulfide photoluminescence by lateral electric fields.

Large single-crystal domains of WS2 are grown by chemical vapor deposition, and their photoluminescent properties under a lateral electric field are studied. We demonstrate that monolayer and bilayer WS2 have opposite responses to lateral electric fields, with WS2 photoluminescence (PL) substantially reduced in monolayer and increased in bilayers with increasing lateral electric field strength. Temperature-dependent PL measurements are also undertaken and show behavior distinctly different than that of the lateral electric field effects, ruling out heating as the cause of the PL changes. The PL variation in both monolayer and bilayer WS2 is attributed to the transfer of photoexcited electrons from one conduction band extremum to another, modifying the resultant recombination pathways. This effect is observed in 2D transition metal dichalcogenides due to their large exciton binding energy and small energy difference between the two conduction band extrema.

Wired up: interconnecting two-dimensional materials with one-dimensional atomic chains.

Atomic wires are chains of atoms sequentially bonded together and epitomize the structural form of a one-dimensional (1D) material. In graphene, they form as interconnects between regions when the nanoconstriction eventually becomes so narrow that it is reduced to one atom thick. In this issue of ACS Nano, Cretu et al. extend the discovery of 1D atomic wire interconnects in two-dimensional (2D) materials to hexagonal boron nitride. We highlight recent progress in the area of 1D atomic wires within 2D materials, with a focus on their atomic-level structural analysis using aberration-corrected transmission electron microscopy. We extend this discussion to the formation of nanowires in transition metal dichalcogenides under similar electron-beam irradiation conditions. The future outlook for atomic wires is considered in the context of new 2D materials and hybrids of C, B, and N.

Controlling sulphur precursor addition for large single crystal domains of WS2.

We show that controlling the introduction time and the amount of sulphur (S) vapour relative to the WO3 precursor during the chemical vapour deposition (CVD) growth of WS2 is critical to achieving large crystal domains on the surface of silicon wafers with a 300 nm oxide layer. We use a two furnace system that enables the S precursor to be separately heated from the WO3 precursor and growth substrate. Accurate control of the S introduction time enabled the formation of triangular WS2 domains with edges up to 370 µm which are visible to the naked eye. The WS2 domains exhibit room-temperature photoluminescence with a peak value around ∼635 nm and a full-width at half-maximum (FWHM) of ∼12 nm. Selected area electron diffraction from different regions of the triangular WS2 domains showed that they are single crystal structures.