Observation of ultrafast interfacial Meitner-Auger energy transfer in a Van der Waals heterostructure.

Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe2/graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron injection from graphene to WSe2 is observed after photoexcitation of quasi-free hot carriers in the graphene layer, we establish an interfacial Meitner-Auger energy transfer process following the excitation of excitons in WSe2. By analysing the time-energy-momentum distributions of excited-state carriers with a rate-equation model, we distinguish these two types of interfacial dynamics and identify the ultrafast conversion of excitons in WSe2 to valence band transitions in graphene. Microscopic calculations find interfacial dipole-monopole coupling underlying the Meitner-Auger energy transfer to dominate over conventional Förster- and Dexter-type interactions, in agreement with the experimental observations. The energy transfer mechanism revealed here might enable new hot-carrier-based device concepts with van der Waals heterostructures.

Real-time optimal quantum control of mechanical motion at room temperature.

The ability to accurately control the dynamics of physical systems by measurement and feedback is a pillar of modern engineering1. Today, the increasing demand for applied quantum technologies requires adaptation of this level of control to individual quantum systems2,3. Achieving this in an optimal way is a challenging task that relies on both quantum-limited measurements and specifically tailored algorithms for state estimation and feedback4. Successful implementations thus far include experiments on the level of optical and atomic systems5-7. Here we demonstrate real-time optimal control of the quantum trajectory8 of an optically trapped nanoparticle. We combine confocal position sensing close to the Heisenberg limit with optimal state estimation via Kalman filtering to track the particle motion in phase space in real time with a position uncertainty of 1.3 times the zero-point fluctuation. Optimal feedback allows us to stabilize the quantum harmonic oscillator to a mean occupation of 0.56 ± 0.02 quanta, realizing quantum ground-state cooling from room temperature. Our work establishes quantum Kalman filtering as a method to achieve quantum control of mechanical motion, with potential implications for sensing on all scales. In combination with levitation, this paves the way to full-scale control over the wavepacket dynamics of solid-state macroscopic quantum objects in linear and nonlinear systems.

One-dimensional confinement and width-dependent bandgap formation in epitaxial graphene nanoribbons.

The ability to define an off state in logic electronics is the key ingredient that is impossible to fulfill using a conventional pristine graphene layer, due to the absence of an electronic bandgap. For years, this property has been the missing element for incorporating graphene into next-generation field effect transistors. In this work, we grow high-quality armchair graphene nanoribbons on the sidewalls of 6H-SiC mesa structures. Angle-resolved photoelectron spectroscopy (ARPES) and scanning tunneling spectroscopy measurements reveal the development of a width-dependent semiconducting gap driven by quantum confinement effects. Furthermore, ARPES demonstrates an ideal one-dimensional electronic behavior that is realized in a graphene-based environment, consisting of well-resolved subbands, dispersing and non-dispersing along and across the ribbons respectively. Our experimental findings, coupled with theoretical tight-binding calculations, set the grounds for a deeper exploration of quantum confinement phenomena and may open intriguing avenues for new low-power electronics.

Overdoping Graphene beyond the van Hove Singularity.

At very high doping levels the van Hove singularity in the π^{*} band of graphene becomes occupied and exotic ground states possibly emerge, driven by many-body interactions. Employing a combination of ytterbium intercalation and potassium adsorption, we n dope epitaxial graphene on silicon carbide past the π^{*} van Hove singularity, up to a charge carrier density of 5.5×10^{14} cm^{-2}. This regime marks the unambiguous completion of a Lifshitz transition in which the Fermi surface topology has evolved from two electron pockets into a giant hole pocket. Angle-resolved photoelectron spectroscopy confirms these changes to be driven by electronic structure renormalizations rather than a rigid band shift. Our results open up the previously unreachable beyond-van-Hove regime in the phase diagram of epitaxial graphene, thereby accessing an unexplored landscape of potential exotic phases in this prototype two-dimensional material.