Passive Q-switching of microchip lasers based on Ho:YAG ceramics.

A Ho:YAG ceramic microchip laser pumped by a Tm fiber laser at 1910 nm is passively Q-switched by single- and multi-layer graphene, single-walled carbon nanotubes (SWCNTs), and Cr2+:ZnSe saturable absorbers (SAs). Employing SWCNTs, this laser generated an average power of 810 mW at 2090 nm with a slope efficiency of 68% and continuous wave to Q-switching conversion efficiency of 70%. The shortest pulse duration was 85 ns at a repetition rate of 165 kHz, and the pulse energy reached 4.9 µJ. The laser performance and pulse stability were superior compared to graphene SAs even for a different number of graphene layers (n=1 to 4). A model for the description of the Ho:YAG laser Q-switched by carbon nanostructures is presented. This modeling allowed us to estimate the saturation intensity for multi-layered graphene and SWCNT SAs to be 1.2±0.2 and 7±1 MW/cm2, respectively. When using Cr2+:ZnSe, the Ho:YAG microchip laser generated 11 ns/25 µJ pulses at a repetition rate of 14.8 kHz.

Carbon nanotube mode-locked optically-pumped semiconductor disk laser.

An optically pumped semiconductor disk laser was mode-locked for the first time by employing a single-walled carbon nanotube saturable absorber. Stable passive fundamental mode-locking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm.

Graphene mode-locked femtosecond Cr:ZnSe laser at 2500 nm.

We report, for the first time to our knowledge, femtosecond pulse generation from a graphene mode-locked Cr:ZnSe laser at 2500 nm. To minimize the insertion losses at the lasing wavelength, high-quality monolayer graphene transferred on a CaF(2) substrate was used in the experiments. Once mode-locking was initiated, the laser generated a stable train of 226 fs pulses with a time-bandwidth product of 0.39. The mode-locked laser operated at a pulse repetition rate of 77 MHz and produced 80 mW output power with an incident pump power of 1.6 W. To our knowledge, this is the longest laser wavelength at which graphene-based passive mode-locking has been demonstrated to date.

Energy scaling of a carbon nanotube saturable absorber mode-locked femtosecond bulk laser.

We report successful energy scaling of a room-temperature femtosecond Cr4+: forsterite laser by using a single-walled carbon nanotube saturable absorber (SWCNT-SA). By incorporating a q-preserving multipass cavity, a repetition rate of 4.51 MHz was realized, and the oscillator produced 121 fs, 10 nJ pulses at 1247 nm, with an average output power of 46 mW. To the best of our knowledge, the peak power of 84 kW is the highest generated to date from a SWCNT-SA mode-locked oscillator. Furthermore, energy scaling of a femtosecond multipass-cavity laser, mode-locked using a SWCNT-SA, is demonstrated for the first time.

Terahertz near-field enhancement in narrow rectangular apertures on metal film.

We report huge field accumulations in rectangular aperture arrays on thin metal film by using shape resonance in THz frequency region. A huge far-field transmission enhancement is observed in samples of various widths ranging from 10 mum to 1.8 mum which correspond to only an order of lambda/100. Theoretical calculations based on vector diffraction theory indicates 230 times near-field enhancement in case of the 1.8 mum wide rectangular aperture. Transmission measurement through the single rectangular aperture shows that the shape resonance, not the periodicity, is mainly responsible for the transmission enhancement and the corresponding field enhancement.

Strong influence of nonlinearity and surface plasmon excitations on the lateral shift.

When surface plasmons are excited at a metal-dielectric interface, the electromagnetic field takes a very large value near the interface. If the dielectric is a nonlinear Kerr medium, then the effect of nonlinearity can be greatly amplified due to the field enhancement. In this paper, we calculate the lateral shift of p wave beams incident on metal-dielectric multilayer systems in the Otto configuration in a numerically exact manner, using the invariant imbedding method of wave propagation in nonlinear stratified media. In the linear case, we find that the lateral shift becomes very large at the incident angles where the surface plasmons are excited. As the nonlinearity is turned on, the value of the lateral shift changes rapidly. We find that even a small change of the intensity of the incident wave can cause a huge change of the lateral shift. We propose that this phenomenon can be applied to designing precise optical switches operating at small powers.

Propagation of electromagnetic waves in stratified media with nonlinearity in both dielectric and magnetic responses.

We develop a generalized version of the invariant imbedding method, which allows us to solve the electromagnetic wave equations in arbitrarily inhomogeneous stratified media where both the dielectric permittivity and magnetic permeability depend on the strengths of the electric and magnetic fields, in a numerically accurate and efficient manner. We apply our method to a uniform nonlinear slab and find that in the presence of strong external radiation, an initially uniform medium of positive refractive index can spontaneously change into a highly inhomogeneous medium where regions of positive or negative refractive index as well as metallic regions appear. We also study the wave transmission properties of periodic nonlinear media and the influence of nonlinearity on the mode conversion phenomena in inhomogeneous plasmas. We argue that our theory is very useful in the study of the optical properties of a variety of nonlinear media including nonlinear negative index media fabricated using wires and split-ring resonators.

Multikilohertz optical parametric chirped pulse amplification in periodically poled stoichiometric LiTaO3 at 1235 nm.

We demonstrate, for the first time to our knowledge, multikilohertz operation of a double-stage optical parametric chirped pulse amplifier with periodically poled stoichiometric LiTaO3 crystals, seeded by a homemade Cr:forsterite oscillator operating at 1235 nm. The repetition rate of the amplifier could easily be tuned without the use of electro-optic modulators by using a repetition-rate-tunable kilohertz pump laser operating at 532 nm and a time-synchronization unit. Amplified total (signal+idler) energies of 55.9 and 36.2 microJ were achieved at 1 and 5 kHz, respectively. After recompression, the pulse width of amplified idler pulses at 1235 nm amounted to 530 fs.

Application of the solid solution Cd(x)Hg(1-x)Ga(2)S(4) as a nonlinear optical crystal.

We review the optical properties of the mixed crystal Cd(x)Hg(1-x)Ga(2)S(4) , propose three potential applications to which various physical properties can be tailored, and present experimental results of femtosecond optical parametric amplification in the mid IR from 5.5 to 8mum with 1.25-mum pumping by a 1-kHz Cr:forsterite regenerative amplifier.

Mercury thiogallate mid-infrared femtosecond optical parametric generator pumped at 1.25 microm by a Cr:forsterite regenerative amplifier.

We demonstrate a novel traveling-wave-type optical parametric generator based on 1.25-microm pumping of HgGa(2)S(4) that produces tunable, high-power, transform-limited infinity 200-fs pulses in the mid-IR from 5 to 9 microm. Output idler energies on the microjoule level are obtained with maximum conversion efficiency of 11% for the amplifier stage, which is more than two times better than the results obtained with an analogous sample of the widely spread material AgGaS(2).

Sum-Frequency Generation of Femtosecond Pulses in CsLiB(6)O(10) Down to 175 nm.

Using a 150-mum-thick CsLiB(6)O(10) crystal, we produced 100-fs, >200-nJ light pulses tunable between 175 and 180 nm by sum-frequency generation at a 1-kHz repetition rate with an all-solid-state laser system mixing the fourth harmonic of a femtosecond Ti:sapphire regenerative amplifier and the idler pulse from a traveling-wave optical parametric amplifier.

Femtosecond parametric generation in ZnGeP(2).

We report traveling-wave optical parametric generation in short (2-mm) ZnGeP(2) samples with reduced anomalous absorption, using femtosecond pump pulses near 2 mum . The signal and the idler waves generated could be tuned from 2.5 to 10 mum , and they extend the tunability of the beta-barium borate optical parametric generator used as a pump source to the mid-infrared. At a single-pass internal conversion efficiency of 2.5% we estimate pulse durations of 75 fs (signal near 3 mum) and 200 fs (idler near 6 mum).

Efficient femtosecond traveling-wave optical parametric amplification in periodically poled KTiOPO(4).

We report, for the first time to our knowledge, high-power femtosecond traveling-wave optical parametric amplification by use of periodically poled KTiOPO(4) . With a single pass through a 4-mm-long sample of 1.23-mm thickness we achieved 40% internal conversion efficiency and 5microJ of single-pulse idler energy near 3.8microm , using only 75microJ of energy from the output of a conventional 1-kHz Ti:sapphire regenerative amplifier. The 210-fs-long idler pulses were almost transform limited. We discuss the specific problems encountered in high-power parametric conversion, such as unwanted quasi-phase-matched upconversion processes for polarization configurations that utilize the largest (d(33)) nonlinear coefficient and the related formation of color centers (gray tracking) in KTiOPO(4) .

Generation of the fourth harmonic of a femtosecond Ti:sapphire laser.

A high-repetition-rate femtosecond laser system operating, for the first time to our knowledge, in the spectral region near 200 nm is described. Frequency quadrupling of a mode-locked Ti:sapphire laser results in maximum average powers of 6 mW (165-fs pulses) and 15 mW (340-fs pulses) at 82 MHz. The shortest wavelength achieved is 193.7 nm.

Femtosecond Traveling-Wave Optical Parametric Amplification in MgO:LiNbO(3).

A mid-infrared femtosecond optical parametric amplifier tunable in the chemically important spectral region between 3.1 and 3.9 mum (at >10-muJ idler pulse energy) has been constructed on the basis of MgO:LiNbO(3) with 7% doping. With femtosecond pumping near 800 nm (Ti:sapphire regenerative amplifier) and narrow-band (long-pulse) seeding, this simple single-stage device provides maximum conversion efficiencies of 40% and exhibits extremely low seed threshold (<10-mW peak seed power for >1-muJ idler output). The generated idler pulses are almost transform limited with <200-fs pulse duration. The pulse-to-pulse fluctuations reproduce the stability of the pump source at 1-kHz repetition rate.