Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform.

We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (<0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wavelength range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer platform. The total interlayer coupler length was only 120 µm.

Ultralow-loss waveguide crossing for photonic integrated circuits by using inverted tapers.

An ultralow-loss silicon planar waveguide crossing operating in the O-band was experimentally demonstrated based on the Gaussian beam synthesis method. Elliptical parabolic inverted tapers were introduced in our design to reduce the crossing loss. According to the measurement results, the proposed device exhibits an insertion loss of 0.008 dB, which is the lowest reported loss for planar silicon waveguide crossings operating in the O-band. The device exhibits a low crosstalk below -40 dB over a 40 nm wavelength range with a compact footprint of 18 × 18 µm2 and can be fabricated in a complementary metal-oxide-semiconductor-compatible process.

CMOS-Compatible Ultralow-Loss Three-Step Silicon Edge Coupler with Substrate Substitution in the Whole Communication Band.

Edge coupler is a key component of silicon-based optoelectronic chips, which dramatically reduces the coupling loss between fibers and transmission waveguides. Here, we propose an ultralow-loss three-step silicon edge coupler based on a 130 nm CMOS process. By replacing the silicon substrate with a material with a lower refractive index than silicon oxide, the silicon leakage loss and polarization-dependent loss can be significantly improved. This structure avoids the existence of a cantilever, which enhances the mechanical strength of the edge coupler. Coupling with standard single-mode fiber, the simulation results demonstrate that the TE/TM mode has an ultralow loss of 0.63/1.08 dB at 1310 nm and 0.57/1.34 dB at 1550 nm, and the 0.5 dB bandwidth covering the entire communication band is about 400 nm. In the entire communication band, the polarization-dependent loss is less than 0.8 dB. Furthermore, we propose a taper shape design method based on mode analysis, which can be adapted for any taper to improve its compactness. Compared with the parabolic shape, the coupling loss of the edge coupler with a length of 460 µm for the TE mode is improved by 0.3 dB on average, this edge coupler provides a feasible solution for fiber-to-chip coupling and is perfectly suitable for wavelength division multiplexing applications in optical communications.

High-speed PAM4 transmission with a GeSi electro-absorption modulator and dual-path neural-network-based equalization.

Equalization based on artificial neural networks (NN) has proved to be an effective way for nonlinearity mitigation in various kinds of optical communication systems. In this Letter, we propose a novel methodology of dual-path neural network (DP-NN)-based equalization. By combining a linear equalizer with an input-pruned NN equalizer, DP-NN can effectively reduce the computation cost compared to a conventional NN equalizer. We confirm its feasibility through 4-ary pulse amplitude modulation (PAM4) transmission at a gross(net) bitrate of 160 Gb/s (133.3 Gb/s), based on a GeSi electro-absorption modulator operating at C-band. After a 2 km transmission, the bit error rate is below the 20% hard-decision forward-error-correction threshold of 1.5×10-2 with the DP-NN equalization, which outperforms the Volterra equalization and is comparable to conventional NN-based equalization.

Co-design of a differential transimpedance amplifier and balanced photodetector for a sub-pJ/bit silicon photonics receiver.

This paper presents the design and implementation of a fully differential optical receiver, which is aimed for short reach intensity modulation and direct detection (IMDD) transceiver links. A Si-Ge balanced photodetector (PD) has been co-designed and packaged with a novel differential transimpedance amplifier (TIA). The TIA design is realized with a standard 28 nm CMOS process and operates with a standard digital supply (1V). Without using any equalization or DSP techniques, the proposed receiver can operate up to 54 Gb/s with a BER less than the KP4 limit (2.2×10-4) under an optical modulation amplitude (OMA) of -8.6 dBm, while the power efficiency has been optimized to 0.55 pJ/bit (0.98 pJ/bit if output buffer is included).

High-speed SSB transmission with a silicon MZM and a soft combined artificial neural network-based equalization.

We experimentally demonstrate high-speed metro-scale optical transmission of a single sideband (SSB) 4-ary pulse amplitude modulation (PAM-4) signal based on a silicon photonic dual-drive Mach-Zehnder modulator (MZM). We propose a novel, to the best of our knowledge, artificial neural network (ANN) structure of soft combined ANN (SC-ANN) to compensate for both linear and nonlinear impairments of the signal. SC-ANN obtains the enhanced performance by averaging the outputs of conventional ANN with different sizes. With the help of the SC-ANN, we achieve a 320 km standard single-mode fiber (SSMF) transmission of 184 Gb/s (92Gbaud) PAM-4 with a bit-error rate (BER) below the 20% soft-decision forward error-correction (SD-FEC) threshold of ${2.4} \times {{10}^{ - 2}}$2.4×10-2, and the optical signal-to-noise ratio (OSNR) penalty is only 0.3 dB compared to the back-to-back (BTB) results.

Compact polarization diversity Kramers-Kronig coherent receiver on silicon chip.

We design and fabricate a compact silicon photonic integrated circuit (PIC) for polarization diversity heterodyne coherent detection. This PIC integrates two optical gratings for fiber coupling and polarization diversity, two germanium single-ended photodetectors (PDs), and three multimode interferometers (MMIs) for power splitting and optical hybrid. The device is highly compact with a footprint of 0.68mm × 0.9mm. We test this PIC with heterodyne detection experiments of polarization division multiplexed (PDM) 32Gbaud quadrature phase shift keying (QPSK) and 16-ary quadrature amplitude modulation (16QAM) signals. The signal-signal beat interference due to square-law detection is separately mitigated with the Kramers-Kronig (KK) scheme for each of the two orthogonal polarizations. To our best knowledge, we report the first PDM-KK coherent receiver in PIC with a capability of detecting 256Gb/s 16QAM signals, which shows the most compact size among the silicon coherent receivers ever reported.

Multi-layer MOS capacitor based polarization insensitive electro-optic intensity modulator.

In this study, a multi-layer metal-oxide-semiconductor capacitor (MLMOSC) polarization insensitive modulator is proposed. The design is validated by numerical simulation with commercial software LUMERICAL SOLUTION. Based on the epsilon-near-zero (ENZ) effect of indium tin oxide (ITO), the device manages to uniformly modulate both the transverse electric (TE) and the transverse magnetic (TM) modes. With a 20µm-long double-layer metal-oxide-semiconductor capacitor (DLMOSC) polarization insensitive modulator, in which two metal-oxide-semiconductor (MOS) structures are formed by the n-doped Si/HfO2/ITO/HfO2/ n-doped Si stack, the extinction ratios (ERs) of both the TE and the TM modes can be over 20dB. The polarization dependent losses of the device can be as low as 0.05dB for the "OFF" state and 0.004dB for the "ON" state. Within 1dB polarization dependent loss, the device can operate with over 20dB ERs at the S, C, and L bands. The polarization insensitive modulator offers various merits including ultra-compact size, broadband spectrum, and complementary metal oxide semiconductor (CMOS) compatibility.

Experimental comparison of direct detection Nyquist SSB transmission based on silicon dual-drive and IQ Mach-Zehnder modulators with electrical packaging.

We have designed and fabricated a silicon photonic in-phase-quadrature (IQ) modulator based on a nested dual-drive Mach-Zehnder structure incorporating electrical packaging. We have assessed its use for generating Nyquist-shaped single sideband (SSB) signals by operating it either as an IQ Mach-Zehnder modulator (IQ-MZM) or using just a single branch of the dual-drive Mach-Zehnder modulator (DD-MZM). The impact of electrical packaging on the modulator bandwidth is also analyzed. We demonstrate 40 Gb/s (10Gbaud) 16-ary quadrature amplitude modulation (16-QAM) Nyquist-shaped SSB transmission over 160 km standard single mode fiber (SSMF). Without using any chromatic dispersion compensation, the bit error rates (BERs) of 5.4 × 10-4 and 9.0 × 10-5 were measured for the DD-MZM and IQ-MZM, respectively, far below the 7% hard-decision forward error correction threshold. The performance difference between IQ-MZM and DD-MZM is most likely due to the non-ideal electrical packaging. Our work is the first experimental comparison between silicon IQ-MZM and silicon DD-MZM in generating SSB signals. We also demonstrate 50 Gb/s (12.5Gbaud) 16-QAM Nyquist-shaped SSB transmission over 320 km SSMF with a BER of 2.7 × 10-3. Both the silicon IQ-MZM and the DD-MZM show potential for optical transmission at metro scale and for data center interconnection.