Native Point Defect Measurement and Manipulation in ZnO Nanostructures.

This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.

Metallic ferromagnetic films with magnetic damping under 1.4 × 10-3.

Low-damping magnetic materials have been widely used in microwave and spintronic applications because of their low energy loss and high sensitivity. While the Gilbert damping constant can reach 10-4 to 10-5 in some insulating ferromagnets, metallic ferromagnets generally have larger damping due to magnon scattering by conduction electrons. Meanwhile, low-damping metallic ferromagnets are desired for charge-based spintronic devices. Here, we report the growth of Co25Fe75 epitaxial films with excellent crystalline quality evident by the clear Laue oscillations and exceptionally narrow rocking curve in the X-ray diffraction scans as well as from scanning transmission electron microscopy. Remarkably, the Co25Fe75 epitaxial films exhibit a damping constant <1.4 × 10-3, which is comparable to the values for some high-quality Y3Fe5O12 films. This record low damping for metallic ferromagnets offers new opportunities for charge-based applications such as spin-transfer-torque-induced switching and magnetic oscillations.Owing to their conductivity, low-damping metallic ferromagnets are preferred to insulating ferromagnets in charge-based spintronic devices, but are not yet well developed. Here the authors achieve low magnetic damping in CoFe epitaxial films which is comparable to conventional insulating ferromagnetic YIG films.