Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires.

The conductance of semiconductor nanowires is strongly dependent on their electrostatic history because of the overwhelming influence of charged surface and interface states on electron confinement and scattering. We show that InAs nanowire field-effect transistor devices can be conditioned to suppress resonances that obscure quantized conduction thereby revealing as many as six sub-bands in the conductance spectra as the Fermi-level is swept across the sub-band energies. The energy level spectra extracted from conductance, coupled with detailed modeling shows the significance of the interface state charge distribution revealing the Coulomb landscape of the nanowire device. Inclusion of self-consistent Coulomb potentials, the measured geometrical shape of the nanowire, the gate geometry and nonparabolicity of the conduction band provide a quantitative and accurate description of the confinement potential and resulting energy level structure. Surfaces of the nanowire terminated by HfO2 are shown to have their interface donor density reduced by a factor of 30 signifying the passivating role played by HfO2.

Towards the quantitative evaluation of visual attention models.

Scores of visual attention models have been developed over the past several decades of research. Differences in implementation, assumptions, and evaluations have made comparison of these models very difficult. Taxonomies have been constructed in an attempt at the organization and classification of models, but are not sufficient at quantifying which classes of models are most capable of explaining available data. At the same time, a multitude of physiological and behavioral findings have been published, measuring various aspects of human and non-human primate visual attention. All of these elements highlight the need to integrate the computational models with the data by (1) operationalizing the definitions of visual attention tasks and (2) designing benchmark datasets to measure success on specific tasks, under these definitions. In this paper, we provide some examples of operationalizing and benchmarking different visual attention tasks, along with the relevant design considerations.

Axial p-n-junctions in nanowires.

The charge distribution and potential profile of p-n-junctions in thin semiconductor nanowires (NWs) were analyzed. The characteristics of screening in one-dimensional systems result in a specific profile with large electric field at the boundary between the n- and p- regions, and long tails with a logarithmic drop in the potential and charge density. As a result of these tails, the junction properties depend sensitively on the geometry of external contacts and its capacity has an anomalously large value and frequency dispersion. In the presence of an external voltage, electrons and holes in the NWs can not be described by constant quasi-Fermi levels, due to small values of the average electric field, mobility, and lifetime of carriers. Thus, instead of the classical Sah-Noice-Shockley theory, the junction current-voltage characteristic was described by an alternative theory suitable for fast generation-recombination and slow diffusion-drift processes. For the non-uniform electric field in the junction, this theory predicts the forward branch of the characteristic to have a non-ideality factor η several times larger than the values 1 < η < 2 from classical theory. Such values of η have been experimentally observed by a number of researchers, as well as in the present work.

Direct observation of single-charge-detection capability of nanowire field-effect transistors.

A single localized charge can quench the luminescence of a semiconductor nanowire, but relatively little is known about the effect of single charges on the conductance of the nanowire. In one-dimensional nanostructures embedded in a material with a low dielectric permittivity, the Coulomb interaction and excitonic binding energy are much larger than the corresponding values when embedded in a material with the same dielectric permittivity. The stronger Coulomb interaction is also predicted to limit the carrier mobility in nanowires. Here, we experimentally isolate and study the effect of individual localized electrons on carrier transport in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. In the low carrier density regime, the electrostatic potential produced by one electron can create an insulating weak link in an otherwise conducting nanowire field-effect transistor, modulating its conductance by as much as 4,200% at 31 K. The equivalent charge sensitivity, 4 × 10(-5) e Hz(-1/2) at 25 K and 6 × 10(-5) e Hz(-1/2) at 198 K, is orders of magnitude better than conventional field-effect transistors and nanoelectromechanical systems, and is just a factor of 20-30 away from the record sensitivity for state-of-the-art single-electron transistors operating below 4 K (ref. 8). This work demonstrates the feasibility of nanowire-based single-electron memories and illustrates a physical process of potential relevance for high performance chemical sensors. The charge-state-detection capability we demonstrate also makes the nanowire field-effect transistor a promising host system for impurities (which may be introduced intentionally or unintentionally) with potentially long spin lifetimes, because such transistors offer more sensitive spin-to-charge conversion readout than schemes based on conventional field-effect transistors.

Nanorod dynamics in ac electric fields.

Metal and semiconductor nanorods polarized by an external electric field tend to align parallel to this field. We derived the equation of motion for this alignment, taking into account electrostatic forces, thermal fluctuations and viscous resistance of the liquid the nanorods are suspended in. It was solved for a strong ac electric field, as well as for the combination of strong dc and weak ac fields. The results were used for calculations of the capacity of the nanorod solution, its frequency dispersion and dependence on the field strength. Modification of the nanorod absorption spectra under the influence of an electric field was also considered. It was shown that metal nanorods in laser radiation, with the frequency belonging to the interval between longitudinal and transverse plasmon modes, tend to align perpendicular, rather than parallel, to the optical electric field.

Pillar-array based optical sensor.

An optical microcavity based on pillar arrays has been fabricated in Si/SiO(2) material system. Transmission measurement was taken and a quality factor as high as 27,600 was observed. This cavity was tested for sensing applications by immersing into optical fluids with accurate refractive indices. For refractive index change of 0.01, a resonance peak wavelength shift of 3.5 nm was measured. We also compare cavities consisting of pillars with different aspect ratios.

Plasmon spectra in two-dimensional nanorod arrays.

For various types of ensembles of metal nanorods, the frequencies of longitudinal and transverse plasmons were calculated and correlations between the plasmon frequency shifts and the topology of nanorod arrays were found. The theoretical predictions were compared with the experimentally determined optical absorption in arrays of polymer-terminated Au nanorods obtained by self-assembly in selective solvents.

The warped geometry of visual space near a line assessed using a hyperacuity displacement task.

Badcock and Westheimer (Spatial Vision 1 (1), 3-11, 1985) showed that a thin vertical line induces nearby zones of attraction and repulsion; this study extends those results by more closely examining the horizontal and vertical extents of the repulsion zone and by using an illusory contour to induce repulsion. The experimental paradigm measures perceived hyperacute displacements of a thin vertical line 10' tall. Halfway through the stimulus, the bright target line was shifted and a lower contrast flanking line added. Conditions equivalent to Badcock and Westheimer replicate their results. Repulsion is observed horizontally from separations of 5' to at least 30' and becomes minimal at 50'. Repulsion also decreases with increasing vertical separation. Another experiment shows that symmetry is not required for repulsion when the flanking line is split into two vertically separated fragments: one fragment alone causes the same amount of repulsion as both fragments together. Finally, it is shown that a flanking contour formed by the grating illusion causes repulsion of the target line in the same manner as a target line defined by luminance.