Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications.

We report on the current-carrying capacity of the nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that the TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA cm(-2)-an order-of-magnitude higher than that for copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in a low surface roughness and in the absence of the grain boundaries. These features can potentially enable the downscaling of the nanowires to lateral dimensions in a few-nm range. Our results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.

Low-frequency current fluctuations in "graphene-like" exfoliated thin-films of bismuth selenide topological insulators.

We report on the low-frequency current fluctuations and electronic noise in thin-films made of Bi(2)Se(3) topological insulators. The films were prepared via the "graphene-like" mechanical exfoliation and used as the current conducting channels in the four- and two-contact devices. The thickness of the films ranged from ∼50 to 170 nm to avoid hybridization of the top and bottom electron surface states. Analysis of the resistance dependence on the film thickness indicates that the surface contribution to conductance is dominant in our samples. It was established that the current fluctuations have the noise spectrum close to the pure 1/f in the frequency range from 1 Hz to 10 kHz (f is the frequency). The relative noise amplitude S(I)/I(2) for the examined Bi(2)Se(3) films was increasing from ∼5 × 10(-8) to 5 × 10(-6) (1/Hz) as the resistance of the channels varied from ∼10(3) to 10(5) Ω. The obtained noise data is important for understanding electron transport through the surface and volume of topological insulators, and proposed applications of this class of materials. The results may help to develop a new method of noise reduction in electronic devices via the "scattering immune" transport through the surface states.