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1.
Opt Express ; 31(19): 31200-31211, 2023 Sep 11.
Artigo em Inglês | MEDLINE | ID: mdl-37710644

RESUMO

We propose the concept of a Dirac grating, where periodic permittivity perturbations approach a train of Dirac functions. We show that Dirac gratings can yield identical spectral characteristics for higher-order gratings compared to first-order gratings of the same length. Using an inverse Fourier transform technique, we design different types of Dirac gratings, including structures operating at the exceptional point where parity-time symmetry breaks down, producing unidirectional reflectance. We employ analytical and numerical techniques to validate our theory by modelling practical examples of Dirac gratings implemented in dielectric stacks and silicon nanophotonic waveguides.

2.
Appl Opt ; 57(13): 3586-3591, 2018 May 01.
Artigo em Inglês | MEDLINE | ID: mdl-29726535

RESUMO

We report on the design optimization and tolerance analysis of a multistep lateral-taper spot-size converter based on indium phosphide (InP), performed using the Monte Carlo method. Being a natural fit to (and a key building block of) the regrowth-free taper-assisted vertical integration platform, such a spot-size converter enables efficient and displacement-tolerant fiber coupling to InP-based photonic integrated circuits at a wavelength of 1.31 µm. An exemplary four-step lateral-taper design featuring 0.35 dB coupling loss at optimal alignment of a standard single-mode fiber; ≥7 µm 1 dB displacement tolerance in any direction in a facet plane; and great stability against manufacturing variances is demonstrated.

3.
Appl Opt ; 56(19): 5532-5541, 2017 Jul 01.
Artigo em Inglês | MEDLINE | ID: mdl-29047512

RESUMO

We propose several designs of nonlinear optical waveguides based on quaternary III-V semiconductors AlGaAsSb and InGaAsP. These semiconductor materials have been widely used for laser sources. Their nonlinear optical properties, however, yet remain unexplored, while the materials definitely hold promise for nonlinear photonics on-a-chip. The latter argument is based on the fact that III-V compounds tend to exhibit high values of the nonlinear optical susceptibilities, while the nonlinear absorption in these materials can be minimized in the wavelength range of interest through a proper selection of the material composition. We present the modal analysis for the designed waveguide structures and show that the effective mode area much less than 1 µm2 can be achieved through a design optimization in each of the two compounds. We also present specific waveguide designs that demonstrate zero dispersion at the wavelengths of interest. The designed AlGaAsSb and InGaAsP waveguides are thus expected to demonstrate high values of the nonlinear coefficient and efficient nonlinear optical interactions.

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