Extracting optical absorption characteristics from semiconductor nanowire arrays.

A method based on extraction of the effective absorption coefficient using Beer-Lambert's law on simulated transmissions is used to understand the optical absorption characteristics of semiconductor nanowire arrays. Three different semiconductor nanowire arrays, viz. silicon (Si), gallium arsenide (GaAs) and amorphous silicon (a-Si), are evaluated using the method. These semiconductors were chosen since two of them have similar real parts of the refractive index in the visible range, while the other two have comparable imaginary parts of the refractive index in the visible range. We examine the roles of the real and imaginary parts of the refractive index in enhancing the absorption characteristics in the nanowire arrays due to the excitation of radial and photonic Bloch modes. We observe that high absorption peaks at modal resonances correspond to the resonance peaks in reflections from the nanowire-air interface. Further, the wavelengths of these two peak resonances are slightly detuned according to the Kramers-Kronig relation for an oscillator system. The study confirms that the resonance wavelengths of radial HE modes are diameter and refractive index dependent. The study extends the understanding to the absorption characteristics due to the excitation of the photonic Bloch modes caused by near-field coupling. Excitation of Bloch modes leads to increased absorption and quality factor as compared to only radial mode excitation. We also conclude that the imaginary part of the refractive index of the semiconductor, influence the diameters at which Bloch modes are excited for a given lattice spacing. We observe that semiconductors with a higher bulk value of absorption coefficient need to be ordered more densely in the nanowire array to be able to excite the photonic crystal modes within the array. Interestingly, we see that for Si, GaAs and a-Si arrays with an equal diameter of 80 nm and lattice spacing of 400 nm, the peak absorption is almost the same, even though GaAs and a-Si are highly absorptive materials compared to Si. Thus, both radial and Bloch mode excitations can be used to design absorption profiles in a semiconductor nanowire array.

Rapid classification of glaucomatous fundus images.

We propose a new method for training convolutional neural networks (CNNs) and use it to classify glaucoma from fundus images. This method integrates reinforcement learning along with supervised learning and uses it for transfer learning. The training method uses hill climbing techniques via two different climber types, namely, "random movement" and "random detection," integrated with a supervised learning model through a stochastic gradient descent with momentum model. The model was trained and tested using the Drishti-GS and RIM-ONE-r2 datasets having glaucomatous and normal fundus images. The performance for prediction was tested by transfer learning on five CNN architectures, namely, GoogLeNet, DenseNet-201, NASNet, VGG-19, and Inception-Resnet v2. A five-fold classification was used for evaluating the performance, and high sensitivities while maintaining high accuracies were achieved. Of the models tested, the DenseNet-201 architecture performed the best in terms of sensitivity and area under the curve. This method of training allows transfer learning on small datasets and can be applied for tele-ophthalmology applications including training with local datasets.

Length dependent optical characteristics analysis for semiconductor nanowires.

Resonant optical mode excitations in semiconductor nanowires result in enhanced absorptions. Nominally, only the diameter dependent radial mode excitations have been considered for the increased absorption. In this paper, we try to understand how the length of the nanowires affects the resonant wavelength and peak absorption wavelengths. We answer two questions viz (1) at what minimum length are radial optical modes stabilized and dominate the absorption characteristics and (2) do longitudinal modes play a role in absorption characteristics especially in determining the resonant wavelength. Two different semiconductors are studied viz silicon and gallium arsenide. We find that even nanowires as short as 200 nm exhibit absorption characteristics dominated by the radial mode excitation. However, for lengths smaller than 200 nm, the optical characteristics are dominated by scattering. Further, we observe that longitudinal modes are excited in low absorption semiconductor materials like silicon for lengths up to 700 nm and the absorption peak depends both on the diameter and the wavelength. Further, shorter length nanowires may have higher absorption than the longer ones in this regime. We also observed that scattering from the nanowires is less than 2% of the incident light. For higher absorption semiconductor like GaAs, absorption characteristics are mainly determined by the radial mode excitations even for shorter lengths. The results provide further insight into the radial mode excitations in semiconductor nanowires.

Resonant photo-thermal modification of vertical gallium arsenide nanowires studied using Raman spectroscopy.

Gallium arsenide nanowires have shown considerable promise for use in applications in which the absorption of light is required. When the nanowires are oriented vertically, a considerable amount of light can be absorbed, leading to significant heating effects. Thus, it is important to understand the threshold power densities that vertical GaAs nanowires can support, and how the nanowire morphology is altered under these conditions. Here, resonant photo-thermal modification of vertical GaAs nanowires was studied using both Raman spectroscopy and electron microscopy techniques. Resonant waveguiding, and subsequent absorption of the excited optical mode reduces the irradiance vertical GaAs nanowires can support relative to horizontal ones, by three orders of magnitude before the onset of structural changes occur. A power density of only 20 W mm(-2) was sufficient to induce local heating in the nanowires, resulting in the formation of arsenic species. Upon further increasing the power, a hollow nanowire morphology was realized. These findings are pertinent to all optical applications and spectroscopic measurements involving vertically oriented GaAs nanowires. Understanding the optical absorption limitations, and the effects of exceeding these limitations will help improve the development of all III-V nanowire devices.

Comparison of ordered and disordered silicon nanowire arrays: experimental evidence of photonic crystal modes.

We experimentally compared the reflectance between ordered and disordered silicon nanowires to observe the evidence of photonic crystal modes. For similar diameters, the resonance peaks for the ordered nanowires at a spacing of 400 nm was at a shorter wavelength than the disordered nanowires, consistent to the excitation of photonic crystal modes. Furthermore, the resonant wavelength didn't shift while changing the density of the disordered nanowires, whereas there was a significant shift observed in the ordered ones. At an ordered spacing of 800 nm, the resonance wavelength approached that of the disordered structures, indicating that the ordered structures were starting to behave like individual waveguides. To our knowledge, this is the first direct experimental observation of photonic crystal modes in vertical periodic silicon nanowire arrays.

Optimization of multiple-slot waveguides for biochemical sensing.

In this work, we analyze and optimize an optical biochemical sensor using silicon multiple-slot waveguides. The rigorous optimization procedure considers parameters such as ridge width, slot width, the number of slots, and the effect of residual silicon left at the bottom of the slot region. These parameters are then optimized using a figure of merit to achieve the highest possible sensitivity to bulk and surface changes in the upper cladding of the sensor. The multiple-slot structure is then studied in a bend configuration in order to construct ring-resonator-based sensors. A bulk sensitivity of 912 nm/refractive index unit is achieved for a change in bulk refractive index, which is three times better than single-slot waveguides.

Enhanced photothermal conversion in vertically oriented gallium arsenide nanowire arrays.

The photothermal properties of vertically etched gallium arsenide nanowire arrays are examined using Raman spectroscopy. The nanowires are arranged in square lattices with a constant pitch of 400 nm and diameters ranging from 50 to 155 nm. The arrays were illuminated using a 532 nm laser with an incident energy density of 10 W/mm(2). Nanowire temperatures were highly dependent on the nanowire diameter and were determined by measuring the spectral red-shift for both TO and LO phonons. The highest temperatures were observed for 95 nm diameter nanowires, whose top facets and sidewalls heated up to 600 and 440 K, respectively, and decreased significantly for the smaller or larger diameters studied. The diameter-dependent heating is explained by resonant coupling of the incident laser light into optical modes of the nanowires, resulting in increased absorption. Photothermal activity in a given nanowire diameter can be optimized by proper wavelength selection, as confirmed using computer simulations. This demonstrates that the photothermal properties of GaAs nanowires can be enhanced and tuned by using a photonic lattice structure and that smaller nanowire diameters are not necessarily better to achieve efficient photothermal conversion. The diameter and wavelength dependence of the optical coupling could allow for localized temperature gradients by creating arrays which consist of different diameters.

Characterizing short dispersion-length fiber via dispersive virtual reference interferometry.

The ability to characterize fibers with near-zero dispersion-length products is of considerable practical interest. We introduce dispersive virtual reference interferometry (DVRI) as a technique for the characterization of short length (<1m) fibers with near-zero disperison-length. DVRI has an accuracy equivalent to standard balanced spectral interferometry (on the order of 10(−3) ps and 10(−5) ps/nm for the group delay and dispersion-length measurements respectively) but does not require wide spectral bandwidths or multiple spectral scans. Following experimental validation, the DVRI technique is used to characterize a 23.3-cm erbium-doped gain fiber (dispersion-length product <0.002 ps/nm), using a tunable laser with a bandwidth of 145 nm. Furthermore, the dispersion in a 28.6-cm commercial dispersion shifted fiber is characterized across the zero-dispersion wavelength and the zero-disperison-wavelength and slope were determined to be 1566.7 nm and 8.57 × 10(−5) ps/(nm2∙m) with a precision of ± 0.2 nm and ± 0.06 × 10(−5) ps/(nm2∙m), respectively.

Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties.

We report fabrication methods, including metal masks and dry etching, and demonstrate highly ordered vertical gallium arsenide nanowire arrays. The etching process created high aspect ratio, vertical nanowires with insignificant undercutting from the mask, allowing us to vary the diameter from 30 nm to 400 nm with a pitch from 250 nm to 1100 nm and length up to 2.2 µm. A diameter to pitch ratio of ∼68% was achieved. We also measured the reflectance from the nanowire arrays and show experimentally diameter-dependent strong absorption peaks resulting from resonant optical mode excitations within these nanowires. The reflectance curves match very well with simulations. The work done here paves the way towards achieving high efficiency solar cells and tunable photodetectors using III-V nanowires.

Junction-less phototransistor with nanowire channels, a modeling study.

We propose a new nanowire based, junction-less phototransistor, that consists of a channel with both wide and narrow regions to ensure efficient light absorption and low dark current, respectively. While the light is absorbed in the wide region, the narrow region allows for ease of band engineering. We also find that a nanowire in the source can further boost the optical gain. The proposed device, which can potentially detect very low light intensities, does not rely on complicated doping profiles, but instead uses suitably designed gates. Our calculations show the detection of a photon flux as low as 35 per second.

Simultaneous dispersion measurements of multiple fiber modes using virtual reference interferometry.

We present the simultaneous measurement of first and second order dispersion in short length (< 1 m) few mode fibers (polarization and transverse) using virtual reference interferometry. This technique generates results equivalent to balanced spectral interferometry, without the complexity associated with physical balancing. This is achieved by simulating a virtual reference with a group delay equal to that of the physical interferometer. The amplitude modulation that results from mixing the interferograms, generated in both the unbalanced interferometer and the virtual reference, is equivalent to the first order interference that would be produced by physical balancing. The advantages of the technique include speed, simplicity, convenience and the capability for simultaneous measurement of multiple modes. The theoretical framework is first developed and then verified experimentally.

Chromatic dispersion measurements using a virtually referenced interferometer.

We present a technique for measuring the chromatic dispersion of short-length (<1 m) optical devices using unbalanced spectral interferometry and a virtual reference path. The technique combines the speed and ease of measurement of unbalanced spectral interferometry with the accuracy of balanced spectral interferometry. We demonstrate measurement accuracy for group delay and the dispersion-length product of ~10(-3) ps/m (<0.0001% relative error) and ~10(-5) ps/m (<0.5% relative error), respectively. Measurement precision is demonstrated to be ~10(-5) ps/m (<0.15% relative deviation). We validate the technique via measurement of well-known dispersion standards.