Nano-Memristors with 4 mV Switching Voltage Based on Surface-Modified Copper Nanoparticles.

The development of memristors operating at low switching voltages <50 mV can be very useful to avoid signal amplification in many types of circuits, such as those used in bioelectronic applications to interact with neurons and nerves. Here, it is reported that 400 nm-thick films made of dalkyl-dithiophosphoric (DDP) modified copper nanoparticles (CuNPs) exhibit volatile threshold-type resistive switching (RS) at ultralow switching voltage of ≈4 mV. The RS is observed in small nanocells with a lateral size of <50 nm-2 , during hundreds of cycles, and with an ultralow variability. Atomistic calculations reveal that the switching mechanism is related to the modification of the Schottky barriers and insulator-to-metal transition when ionic movement is induced via external bias. The devices are also used to model integrate-and-fire neurons for spiking neural networks and it is concluded that circuits employing DDP-CuNPs consume around ten times less power than similar neurons implemented with a memristor that switches at 40 mV.

Defect-Free Metal Deposition on 2D Materials via Inkjet Printing Technology.

2D materials have many outstanding properties that make them attractive for the fabrication of electronic devices, such as high conductivity, flexibility, and transparency. However, integrating 2D materials in commercial devices and circuits is challenging because their structure and properties can be damaged during the fabrication process. Recent studies have demonstrated that standard metal deposition techniques (like electron beam evaporation and sputtering) significantly damage the atomic structure of 2D materials. Here it is shown that the deposition of metal via inkjet printing technology does not produce any observable damage in the atomic structure of ultrathin 2D materials, and it can keep a sharp interface. These conclusions are supported by abundant data obtained via atomistic simulations, transmission electron microscopy, nanochemical metrology, and device characterization in a probe station. The results are important for the understanding of inkjet printing technology applied to 2D materials, and they could contribute to the better design and optimization of electronic devices and circuits.

Advanced Data Encryption ​using 2D Materials.

Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences of bits. TRNG circuits with high degree of randomness and low power consumption may be fabricated by using the random telegraph noise (RTN) current signals produced by polarized metal/insulator/metal (MIM) devices as entropy source. However, the RTN signals produced by MIM devices made of traditional insulators, i.e., transition metal oxides like HfO2 and Al2 O3 , are not stable enough due to the formation and lateral expansion of defect clusters, resulting in undesired current fluctuations and the disappearance of the RTN effect. Here, the fabrication of highly stable TRNG circuits with low power consumption, high degree of randomness (even for a long string of 224  - 1 bits), and high throughput of 1 Mbit s-1 by using MIM devices made of multilayer hexagonal boron nitride (h-BN) is shown. Their application is also demonstrated to produce one-time passwords, which is ideal for the internet-of-everything. The superior stability of the h-BN-based TRNG is related to the presence of few-atoms-wide defects embedded within the layered and crystalline structure of the h-BN stack, which produces a confinement effect that avoids their lateral expansion and results in stable operation.

Density-functional theory models of Fe(iv)O reactivity in metal-organic frameworks: self-interaction error, spin delocalisation and the role of hybrid exchange.

We study the reactivity of Fe(iv)O moieties supported by a metal-organic framework (MOF-74) in the oxidation reaction of methane to methanol using all-electron, periodic density-functional theory calculations. We compare results concerning the electronic properties and reactivity obtained using two hybrid (B3LYP and sc-BLYP) and two standard generalised gradient corrected (PBE and BLYP) semi-local density functional approximations. The semi-local functionals are unable to reproduce the expected reaction profiles and yield a qualitatively incorrect representation of the reactivity. Non-local hybrid functionals provide a substantially more reliable description and predict relatively modest (ca. 60 kJ mol-1) reaction energy barriers for the H-atom abstraction reaction from CH4 molecules. We examine the origin of these differences and we highlight potential means to overcome the limitations of standard semi-local functionals in reactivity calculations in solid-state systems.

Anisotropic Thermal Conductivity in Few-Layer and Bulk Titanium Trisulphide from First Principles.

We study the thermal conductivity of monolayer, bilayer, and bulk titanium trisulphide (TiS 3 ) by means of an iterative solution of the Boltzmann transport equation based on ab-initio force constants. Our results show that the thermal conductivity of these layers is anisotropic and highlight the importance of enforcing the fundamental symmetries in order to accurately describe the quadratic dispersion of the flexural phonon branch near the center of the Brillouin zone.

Optimisation of the thermoelectric efficiency of zirconium trisulphide monolayers through unixial and biaxial strain.

The goal of this work is to investigate the influence of mechanical deformation on the electronic and thermoelectric properties of ZrS3 monolayers. We employ density functional theory (DFT) calculations at the hybrid HSE06 level to evaluate the response of the electronic band gap and mobilities, as well as the thermopower, the electrical conductivity, the phononic and electronic contributions to the thermal conductivity, and the heat capacity. Direct examination of the electronic band structures reveals that the band gap can be increased by up to 17% under uniaxial strain, reaching a maximum value of 2.32 eV. We also detect large variations in the electrical conductivity, which is multiplied by 3.40 under a 4% compression, but much smaller changes in the Seebeck coefficient. The effects of mechanical deformation on thermal transport are even more significant, with a nearly five-fold reduction of the lattice thermal conductivity under a biaxial strain of -4%. By harnessing a combination of these effects, the thermoelectric figure of merit of strained ZrS3 could be doubled with respect to the unstrained material.

Electronic structure and reactivity of Fe(iv)oxo species in metal-organic frameworks.

We investigate the potential use of Fe(iv)oxo species supported on a metal-organic framework in the catalytic hydroxylation of methane to produce methanol. We use periodic density-functional theory calculations at the 6-31G**/B3LYP level of theory to study the electronic structure and chemical reactivity in the hydrogen abstraction reaction from methane in the presence of Fe(iv)O(oxo) supported on MOF-74. Our results indicate that the Fe(iv)O moiety in MOF-74 is characterised by a highly reactive (quintet) ground-state, with a distance between Fe(iv) and O(oxo) of 1.601 Å, consistent with other high-spin Fe(iv)O inorganic complexes in the gas phase and in aqueous solution. Similar to the latter systems, the highly electrophilic character (and thus the reactivity) of Fe(iv)O in MOF-74 is determined by the presence of a low-lying anti-bonding virtual orbital (3σ*), which acts as an electron acceptor in the early stages of the hydrogen atom abstraction from methane. We estimate an energy barrier for hydrogen abstraction of 50.77 kJ mol-1, which is comparable to the values estimated in other gas-phase and hydrated Fe(iv)O-based complexes with the ability to oxidise methane. Our findings therefore suggest that metal-organic frameworks can provide suitable supports to develop new solid-state catalysts for organic oxidation reactions.

The excess electron in polymer nanocomposites.

We have used ab initio molecular dynamics and density-functional theory (DFT) calculations at the B3LYP/6-31G** level of theory to evaluate the energy and localisation of excess electrons at a number of representative interfaces of polymer nanocomposites. These modelled interfaces are made by combining liquid water and amorphous slabs of polyethylene and silica. The walls of the amorphous silica slabs are built with two surface chemistries: Q4 or fully-dehydroxylated and Q3/Q4 or partially-hydroxylated with a silanol content between 1.62 and 6.86 groups per nm2. Our results indicate that in silica/polyethylene systems an excess electron would sit at the interface with energies between -1.75 eV with no hydroxylation and -0.99 eV with the highest silanol content. However, in the presence of a free water film, the chemistry of the silica surface has a negligible influence on the behaviour of the excess electron. The electron sits preferentially at the water/vapour interface with an energy of minus a few tenths of an eV. We conclude that the moisture content in a wet polymer nanocomposite has a profound influence on the electron trapping behaviour as it produces much lower trapping energies and a higher excess-electron mobility compared to the dry material.

The excess electron at polyethylene interfaces.

This work investigates the energy and spatial properties of excess electrons in polyethylene in bulk phases and, for the first time, at amorphous vacuum interfaces using a pseudopotential single-electron method (Lanczos diagonalisation) and density functional theory (DFT). DFT calculations are made employing two approaches: with pseudopotentials/plane waves and the local-density approximation; and with all-electron Gaussian basis functions at the B3LYP level of theory, supplemented with a lattice of ghost atoms. All three methods predict similar spatial localisation of the excess electron, but a reliable comparison of its energy can only be made between the Lanczos and DFT using Gaussian bases. While Lanczos predicts that an excess electron would preferentially localise in nanovoids with diameters smaller than 1 nm, DFT suggests that it would localise on surfaces in nanovoids larger than 1 nm. Overall we conclude that in DFT studies of polyethylene/vacuum interfaces at the current level of theory, orbital-based methods provide a useful representation of excess electron properties.