RESUMO
Magnetization and neutron diffraction studies of the 2D S = 1/2 antiferromagnet, K2V3O8, indicate an ordered state exhibiting weak ferromagnetism and field-induced spin reorientations. Of particular interest is the behavior in a basal plane magnetic field where a unique spin reorientation is observed in which the spins rotate from the easy c axis to the basal plane while remaining normal to the applied field. The experimental observations are well described by a two spin exchange model incorporating Heisenberg and Dzyaloshinskii-Moriya interactions with an additional c-axis anisotropy.
RESUMO
Mean-square atomic displacements in lanthanum triiron cobalt dodecaantimonide, determined as a function of temperature using single-crystal neutron diffraction, show that the La atom exhibits an anomalously large displacement at room temperature, U(eq) = 0.0196 (9) Å(2), because it is too small to fill the atomic cage formed by the corner-linked octahedral framework of M(4)Sb(12), M = Fe, Co. Site-occupancy refinements show 25% vacancies on the La site and an actual Fe:Co ratio of 2.17:1. Analysis of the temperature dependence of the atomic displacements identifies a significant temperature-independent component for the La atom ascribed to static disorder, which amounts to 19% of the room-temperature value. The large-amplitude rattling of the La atom can be effectively linked to the dramatic decrease of the lattice contribution to the thermal conductivity, which is a key factor for improving the thermoelectric behavior of these materials. This structure-property relationship offers a new paradigm for the exploration of thermoelectric materials.
RESUMO
A class of thermoelectric materials has been synthesized with a thermoelectric figure of merit ZT (where T is temperature and Z is a function of thermopower, electrical resistivity, and thermal conductivity) near 1 at 800 kelvin. Although these materials have not been optimized, this value is comparable to the best ZT values obtained for any previously studied thermoelectric material. Calculations indicate that the optimized material should have ZT values of 1.4. These ternary semiconductors have the general formula RM4X12 (where R is lanthanum, cerium, praseodymium, neodymium, or europium; M is iron, ruthenium, or osmium; and X is phosphorus, arsenic, or antimony) and represent a new approach to creating improved thermoelectric materials. Several alloys in the composition range CeFe4-xCoxSb12 or LaFe4-xCoxSb12 (0 < x < 4) have large values of ZT.
