Search for unconventional superconductors among the YTE 2Si2 compounds (TE = Cr, Co, Ni, Rh, Pd, Pt).

Motivated by the recent discovery of exotic superconductivity in YFe2Ge2 we undertook reinvestigation of formation and physical properties of yttrium-based 1:2:2 silicides. Here we report on syntheses and crystal structures of the YTE 2Si2 compounds with TE = Cr, Co, Ni, Rh, Pd and Pt, and their low-temperature physical properties measurements, supplemented by results of fully relativistic full-potential local-orbital minimum basis band structure calculations. We confirm that most of the members of that family crystallize in a tetragonal ThCr2Si2-type structure (space group I4/mmm) and have three-dimensional Fermi surface, while only one of them (YPt2Si2) forms with a closely-related primitive CaBe2Ge2-type unit cell (space group P4/nmm) and possess quasi-two-dimensional Fermi surface sheets. Physical measurements indicated that BCS-like superconductivity is observed only in YPt2Si2 (T c = 1.54 K) and YPd2Si2 (T c = 0.43 K), while no superconducting phase transition was found in other systems at least down to 0.35 K. Thermal analysis showed no polymorphism in both superconducting phases. No clear relation between the superconductivity and the crystal structure (and dimensionality of the Fermi surface) was observed.

Magnetic phase transitions and superconductivity in strained FeTe.

The influence of hydrostatic pressure and ab-plane strain on the magnetic structure of FeTe is investigated from first principles. The results of calculations reveal a phase transition from antiferromagnetic double-stripe ordering at ambient pressure to ferromagnetic ordering at 2 GPa, or under compressive strain reducing the lattice parameter a by about 3%. In turn, a tensile strain of less than 2% induces the phase transition to antiferromagnetic single-stripe ordering. It corresponds to the superconducting FeTe thin films, thereby confirming that the superconducting state is positively linked to single-stripe antiferromagnetic fluctuations. Both types of transition indicate that the position of Te atoms in the crystal is crucial for the magnetic and superconducting properties of iron chalcogenides.

The electronic structure of UCoGe by ab initio calculations and XPS experiment.

The crystal and electronic structures of the orthorhombic compound UCoGe are presented and discussed. It has been either refined by the x-ray diffraction on a single crystal or computed within the local spin density functional theory, employing the fully relativistic version of the full-potential local-orbital band structure code, respectively. We particularly give our attention to investigating the Fermi surface and de Haas-van Alphen quantities of UCoGe. The calculated electronic density is then examined by x-ray photoelectron spectroscopy (XPS). Fairly good agreement is achieved between theoretical and experimental XPS results in the paramagnetic state. A small difference in the position (in energy scale) of the U 5f bands is caused by the electron localization effect observed in the experimental XPS. There is also some discrepancy for the Co 3d electron contributions below E(F). The Fermi surface in the non-magnetic state is of a semimetallic type while that in the ferromagnetic state, with the ordered moment of -0.47 µ(B)/f.u. along the c axis, is more metallic, with nesting properties that may favour superconductivity.

Observation of a strongly nested Fermi surface in the shape-memory alloy Ni0.62Al0.38.

The Fermi surface topology of the shape-memory alloy Ni0.62Al0.38 has been determined using Compton scattering. A large area of this Fermi surface can be made to nest with other areas by translation through a vector of approximately 0.18[1,1,0](2pi/a), which corresponds to the wave vector associated with martensitic precursor phenomena such as phonon softening and diffuse streaking in electron diffraction patterns. This observation is compelling evidence that these phenomena are driven by the enhanced electron-lattice coupling due to the Fermi surface nesting.