Dark Current in Broadband Perovskite-Organic Heterojunction Photodetectors Controlled by Interfacial Energy Band Offset.

Lead halide perovskite and organic semiconductors are promising classes of materials for photodetector (PD) applications. State-of-the-art perovskite PDs have performance metrics exceeding silicon PDs in the visible. While organic semiconductors offer bandgap tunability due to their chemical design with detection extended into the near-infrared (NIR), perovskites are limited to the visible band and the first fraction of the NIR spectrum. In this work, perovskite-organic heterojunction (POH) PDs with absorption up to 950 nm are designed by the dual contribution of perovskite and the donor:acceptor bulk-heterojunction (BHJ), without any intermediate layer. The effect of the energetics of the donor materials is systematically studied on the dark current (Jd) of the device by using the PBDB-T polymer family. Combining the experimental results with drift-diffusion simulations, it is shown that Jd in POH devices is limited by thermal generation via deep trap states in the BHJ. Thus, the best performance is obtained for the PM7-based POH, which delivers an ultra-low noise current of 2 × 10-14 A Hz-1/2 and high specific detectivity of 4.7 × 1012 Jones in the NIR. Last, the application of the PM7-based POH devices as NIR pulse oximeter with high-accuracy heartbeat monitoring at long-distance of 2 meters is demonstrated.

A New Framework for Understanding Recombination-Limited Charge Extraction in Disordered Semiconductors.

Recombination of free charges is a key loss mechanism limiting the performance of organic semiconductor-based photovoltaics such as solar cells and photodetectors. The carrier density-dependence of the rate of recombination and the associated rate coefficients are often estimated using transient charge extraction (CE) experiments. These experiments, however, often neglect the effect of recombination during the transient extraction process. In this work, the validity of the CE experiment for low-mobility devices, such as organic semiconductor-based photovoltaics, is investigated using transient drift-diffusion simulations. We find that recombination leads to incomplete CE, resulting in carrier density-dependent recombination rate constants and overestimated recombination orders; an effect that depends on both the charge carrier mobilities and the resistance-capacitance time constant. To overcome this intrinsic limitation of the CE experiment, we present an analytical model that accounts for charge carrier recombination, validate it using numerical simulations, and employ it to correct the carrier density-dependence observed in experimentally determined bimolecular recombination rate constants.

Subgap Absorption in Organic Semiconductors.

Organic semiconductors have found a broad range of application in areas such as light emission, photovoltaics, and optoelectronics. The active components in such devices are based on molecular and polymeric organic semiconductors, where the density of states is generally determined by the disordered nature of the molecular solid rather than energy bands. Inevitably, there exist states within the energy gap which may include tail states, deep traps caused by unavoidable impurities and defects, as well as intermolecular states due to (radiative) charge transfer states. In this Perspective, we first summarize methods to determine the absorption features due to the subgap states. We then explain how subgap states can be parametrized based upon the subgap spectral line shapes. We finally describe the role of subgap states in the performance metrics of organic semiconductor devices from a thermodynamic viewpoint.

Efficient Nanoscale Exciton Transport in Non-Fullerene Organic Solar Cells Enables Reduced Bimolecular Recombination of Free Charges.

The highest-efficiency organic photovoltaic (OPV)-based solar cells, made from blends of electron-donating and electron-accepting organic semiconductors, are often characterized by strongly reduced (non-Langevin) bimolecular recombination. Although the origins of the reduced recombination are debated, mechanisms related to the charge-transfer (CT) state and free-carrier encounter dynamics controlled by the size of donor and acceptor domains are proposed as underlying factors. Here, a novel photoluminescence-based probe is reported to accurately quantify the donor-acceptor domain size in OPV blends. Specifically, the domain size is measured in high-efficiency non-fullerene acceptor (NFA) systems and a comparative conventional fullerene system. It is found that the NFA-based blends form larger domains but that the expected reductions in bimolecular recombination attributed to the enhanced domain sizes are too small to account for the observed reduction factors. Further, it is shown that the reduction of bimolecular recombination is correlated to enhanced exciton dynamics within the NFA domains. This indicates that the processes responsible for efficient exciton transport also enable strongly non-Langevin recombination in high-efficiency NFA-based solar cells with low-energy offsets.

Single-Crystal Perovskite Solar Cells Exhibit Close to Half A Millimeter Electron-Diffusion Length.

Single-crystal halide perovskites exhibit photogenerated-carriers of high mobility and long lifetime, making them excellent candidates for applications demanding thick semiconductors, such as ionizing radiation detectors, nuclear batteries, and concentrated photovoltaics. However, charge collection depreciates with increasing thickness; therefore, tens to hundreds of volts of external bias is required to extract charges from a thick perovskite layer, leading to a considerable amount of dark current and fast degradation of perovskite absorbers. However, extending the carrier-diffusion length can mitigate many of the anticipated issues preventing the practical utilization of perovskites in the abovementioned applications. Here, single-crystal perovskite solar cells that are up to 400 times thicker than state-of-the-art perovskite polycrystalline films are fabricated, yet retain high charge-collection efficiency in the absence of an external bias. Cells with thicknesses of 110, 214, and 290 µm display power conversion efficiencies (PCEs) of 20.0, 18.4, and 14.7%, respectively. The remarkable persistence of high PCEs, despite the increase in thickness, is a result of a long electron-diffusion length in those cells, which was estimated, from the thickness-dependent short-circuit current, to be ≈0.45 mm under 1 sun illumination. These results pave the way for adapting perovskite devices to optoelectronic applications in which a thick active layer is essential.

Static Disorder in Lead Halide Perovskites.

In crystalline and amorphous semiconductors, the temperature-dependent Urbach energy can be determined from the inverse slope of the logarithm of the absorption spectrum and reflects the static and dynamic energetic disorder. Using recent advances in the sensitivity of photocurrent spectroscopy methods, we elucidate the temperature-dependent Urbach energy in lead halide perovskites containing different numbers of cation components. We find Urbach energies at room temperature to be 13.0 ± 1.0, 13.2 ± 1.0, and 13.5 ± 1.0 meV for single, double, and triple cation perovskite. Static, temperature-independent contributions to the Urbach energy are found to be as low as 5.1 ± 0.5, 4.7 ± 0.3, and 3.3 ± 0.9 meV for the same systems. Our results suggest that, at a low temperature, the dominant static disorder in perovskites is derived from zero-point phonon energy rather than structural disorder. This is unusual for solution-processed semiconductors but broadens the potential application of perovskites further to quantum electronics and devices.

Probing Charge Generation Efficiency in Thin-Film Solar Cells by Integral-Mode Transient Charge Extraction.

The photogeneration of free charges in light-harvesting devices is a multistep process, which can be challenging to probe due to the complexity of contributing energetic states and the competitive character of different driving mechanisms. In this contribution, we advance a technique, integral-mode transient charge extraction (ITCE), to probe these processes in thin-film solar cells. ITCE combines capacitance measurements with the integral-mode time-of-flight method in the low intensity regime of sandwich-type thin-film devices and allows for the sensitive determination of photogenerated charge-carrier densities. We verify the theoretical framework of our method by drift-diffusion simulations and demonstrate the applicability of ITCE to organic and perovskite semiconductor-based thin-film solar cells. Furthermore, we examine the field dependence of charge generation efficiency and find our ITCE results to be in excellent agreement with those obtained via time-delayed collection field measurements conducted on the same devices.

Role of Exciton Diffusion and Lifetime in Organic Solar Cells with a Low Energy Offset.

Despite general agreement that the generation of free charges in organic solar cells is driven by an energetic offset, power conversion efficiencies have been improved using low-offset blends. In this work, we explore the interconnected roles that exciton diffusion and lifetime play in the charge generation process under various energetic offsets. A detailed balance approach is used to develop an analytic framework for exciton dissociation and free-charge generation accounting for exciton diffusion to and dissociation at the donor-acceptor interface. For low-offset systems, we find the exciton lifetime to be a pivotal component in the charge generation process, as it influences both the exciton and CT state dissociation. These findings suggest that any novel low-offset material combination must have long diffusion lengths with long exciton lifetimes to achieve optimum charge generation yields.

Tuning of the Interconnecting Layer for Monolithic Perovskite/Organic Tandem Solar Cells with Record Efficiency Exceeding 21.

The photovoltaic performance of inorganic perovskite solar cells (PSCs) still lags behind the organic-inorganic hybrid PSCs due to limited light absorption of wide bandgap CsPbI3-xBrx under solar illumination. Constructing tandem devices with organic solar cells can effectively extend light absorption toward the long-wavelength region and reduce radiative photovoltage loss. Herein, we utilize wide-bandgap CsPbI2Br semiconductor and narrow-bandgap PM6:Y6-BO blend to fabricate perovskite/organic tandem solar cells with an efficiency of 21.1% and a very small tandem open-circuit voltage loss of 0.06 V. We demonstrate that the hole transport material of the interconnecting layers plays a critical role in determining efficiency, with polyTPD being superior to PBDB-T-Si and D18 due to its low parasitic absorption, sufficient hole mobility and quasi-Ohmic contact to suppress charge accumulation and voltage loss within the tandem device. These perovskite/organic tandem devices also display superior storage, thermal and ultraviolet stabilities.

A universal Urbach rule for disordered organic semiconductors.

In crystalline semiconductors, absorption onset sharpness is characterized by temperature-dependent Urbach energies. These energies quantify the static, structural disorder causing localized exponential-tail states, and dynamic disorder from electron-phonon scattering. Applicability of this exponential-tail model to disordered solids has been long debated. Nonetheless, exponential fittings are routinely applied to sub-gap absorption analysis of organic semiconductors. Herein, we elucidate the sub-gap spectral line-shapes of organic semiconductors and their blends by temperature-dependent quantum efficiency measurements. We find that sub-gap absorption due to singlet excitons is universally dominated by thermal broadening at low photon energies and the associated Urbach energy equals the thermal energy, regardless of static disorder. This is consistent with absorptions obtained from a convolution of Gaussian density of excitonic states weighted by Boltzmann-like thermally activated optical transitions. A simple model is presented that explains absorption line-shapes of disordered systems, and we also provide a strategy to determine the excitonic disorder energy. Our findings elaborate the meaning of the Urbach energy in molecular solids and relate the photo-physics to static disorder, crucial for optimizing organic solar cells for which we present a revisited radiative open-circuit voltage limit.

Direct observation of trap-assisted recombination in organic photovoltaic devices.

Trap-assisted recombination caused by localised sub-gap states is one of the most important first-order loss mechanism limiting the power-conversion efficiency of all solar cells. The presence and relevance of trap-assisted recombination in organic photovoltaic devices is still a matter of some considerable ambiguity and debate, hindering the field as it seeks to deliver ever higher efficiencies and ultimately a viable new solar photovoltaic technology. In this work, we show that trap-assisted recombination loss of photocurrent is universally present under operational conditions in a wide variety of organic solar cell materials including the new non-fullerene electron acceptor systems currently breaking all efficiency records. The trap-assisted recombination is found to be induced by states lying 0.35-0.6 eV below the transport edge, acting as deep trap states at light intensities equivalent to 1 sun. Apart from limiting the photocurrent, we show that the associated trap-assisted recombination via these comparatively deep traps is also responsible for ideality factors between 1 and 2, shedding further light on another open and important question as to the fundamental working principles of organic solar cells. Our results also provide insights for avoiding trap-induced losses in related indoor photovoltaic and photodetector applications.

Experimental Evidence Relating Charge-Transfer-State Kinetics and Strongly Reduced Bimolecular Recombination in Organic Solar Cells.

Significantly reduced bimolecular recombination relative to the Langevin recombination rate has been observed in a limited number of donor-acceptor organic semiconductor blends. The strongly reduced recombination has been previously attributed to a high probability for the interfacial charge-transfer (CT) states (formed upon charge encounter) to dissociate back to free charges. However, whether the reduced recombination is due to a suppressed CT-state decay rate or an improved dissociation rate has remained a matter of conjecture. Here we investigate a donor-acceptor material system that exhibits significantly reduced recombination upon solvent annealing. On the basis of detailed balance analysis and the accurate characterization of CT-state parameters, we provide experimental evidence that an increase in the dissociation rate of CT states upon solvent annealing is responsible for the reduced recombination. We attribute this to the presence of purer and more percolated domains in the solvent-annealed system, which may, therefore, have a stronger entropic driving force for CT dissociation.

Charge-generating mid-gap trap states define the thermodynamic limit of organic photovoltaic devices.

Detailed balance is a cornerstone of our understanding of artificial light-harvesting systems. For next generation organic solar cells, this involves intermolecular charge-transfer (CT) states whose energies set the maximum open circuit voltage VOC. We have directly observed sub-gap states significantly lower in energy than the CT states in the external quantum efficiency spectra of a significant number of organic semiconductor blends. Taking these states into account and using the principle of reciprocity between emission and absorption results in non-physical radiative limits for the VOC. We propose and provide compelling evidence for these states being non-equilibrium mid-gap traps which contribute to photocurrent by a non-linear process of optical release, upconverting them to the CT state. This motivates the implementation of a two-diode model which is often used in emissive inorganic semiconductors. The model accurately describes the dark current, VOC and the long-debated ideality factor in organic solar cells. Additionally, the charge-generating mid-gap traps have important consequences for our current understanding of both solar cells and photodiodes - in the latter case defining a detectivity limit several orders of magnitude lower than previously thought.

Charge Carrier Transport and Generation via Trap-Mediated Optical Release in Organic Semiconductor Devices.

The impact of intermixed donor-acceptor domains in organic bulk heterojunction (BHJ) solar cells, using low-donor-content devices as model systems, is clarified. At low donor contents, the devices are found to exhibit anomalously high open-circuit voltages independent of the donor-acceptor energetics. These observations can be consistently explained by a theoretical model based on optical release of trapped holes, assuming the donors behave as trap sites in the gap of the acceptor. Our findings provide guidelines for reducing the large open-circuit voltage losses in organic solar cells and avoiding morphology-induced losses in state-of-the-art BHJ solar cells and photodetectors.

Reduced Recombination and Capacitor-like Charge Buildup in an Organic Heterojunction.

Organic photovoltaic (OPV) efficiencies continue to rise, raising their prospects for solar energy conversion. However, researchers have long considered how to suppress the loss of free carriers by recombination-poor diffusion and significant Coulombic attraction can cause electrons and holes to encounter each other at interfaces close to where they were photogenerated. Using femtosecond transient spectroscopies, we report the nanosecond grow-in of a large transient Stark effect, caused by nanoscale electric fields of ∼487 kV/cm between photogenerated free carriers in the device active layer. We find that particular morphologies of the active layer lead to an energetic cascade for charge carriers, suppressing pathways to recombination, which is ∼2000 times less than predicted by Langevin theory. This in turn leads to the buildup of electric charge in donor and acceptor domains-away from the interface-resistant to bimolecular recombination. Interestingly, this signal is only experimentally obvious in thick films due to the different scaling of electroabsorption and photoinduced absorption signals in transient absorption spectroscopy. Rather than inhibiting device performance, we show that devices up to 600 nm thick maintain efficiencies of >8% because domains can afford much higher carrier densities. These observations suggest that with particular nanoscale morphologies the bulk heterojunction can go beyond its established role in charge photogeneration and can act as a capacitor, where adjacent free charges are held away from the interface and can be protected from bimolecular recombination.

Doping-induced carrier profiles in organic semiconductors determined from capacitive extraction-current transients.

A method to determine the doping induced charge carrier profiles in lightly and moderately doped organic semiconductor thin films is presented. The theory of the method of Charge Extraction by a Linearly Increasing Voltage technique in the doping-induced capacitive regime (doping-CELIV) is extended to the case with non-uniform doping profiles and the analytical description is verified with drift-diffusion simulations. The method is demonstrated experimentally on evaporated organic small-molecule thin films with a controlled doping profile, and solution-processed thin films where the non-uniform doping profile is unintentional, probably induced during the deposition process, and a priori unknown. Furthermore, the method offers a possibility of directly probing charge-density distributions at interfaces between highly doped and lightly doped or undoped layers.

Impact of Film Thickness of Ultrathin Dip-Coated Compact TiO2 Layers on the Performance of Mesoscopic Perovskite Solar Cells.

Uniform and pinhole-free electron-selective TiO2 layers are of utmost importance for efficient perovskite solar cells. Here we used a scalable and low-cost dip-coating method to prepare uniform and ultrathin (5-50 nm) compact TiO2 films on fluorine-doped tin oxide (FTO) glass substrates. The thickness of the film was tuned by changing the TiCl4 precursor concentration. The formed TiO2 follows the texture of the underlying FTO substrates, but at higher TiCl4 concentrations, the surface roughness is substantially decreased. This change occurs at a film thickness close to 20-30 nm. A similar TiCl4 concentration is needed to produce crystalline TiO2 films. Furthermore, below this film thickness, the underlying FTO might be exposed resulting in pinholes in the compact TiO2 layer. When integrated into mesoscopic perovskite solar cells there appears to be a similar critical compact TiO2 layer thickness above which the devices perform more optimally. The power conversion efficiency was improved by more than 50% (from 5.5% to ∼8.6%) when inserting a compact TiO2 layer. Devices without or with very thin compact TiO2 layers display J-V curves with an "s-shaped" feature in the negative voltage range, which could be attributed to immobilized negative ions at the electron-extracting interface. A strong correlation between the magnitude of the s-shaped feature and the exposed FTO seen in the X-ray photoelectron spectroscopy measurements indicates that the s-shape is related to pinholes in the compact TiO2 layer when it is too thin.

Determination of Surface Recombination Velocities at Contacts in Organic Semiconductor Devices Using Injected Carrier Reservoirs.

A method to determine surface recombination velocities at collecting contacts in interface-limited organic semiconductor devices, based on the extraction of injected carrier reservoirs in a single-carrier sandwich-type structure, is presented. The analytical framework is derived and verified with drift-diffusion simulations. The method is demonstrated on solution-processed organic semiconductor devices with hole-blocking TiO_{2}/organic and SiO_{2}/organic interfaces, relevant for solar cell and transistor applications, respectively.