Realizing avalanche criticality in neuromorphic networks on a 2D hBN platform.

Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate a system comprising of multilayer hexagonal boron nitride (hBN) films contacted with silver (Ag), which can uniquely host two different self-assembled networks, which are self-organized at criticality (SOC). This system shows bipolar resistive switching between the high resistance state (HRS) and the low resistance state (LRS). In the HRS, Ag clusters (nodes) intercalate in the van der Waals gaps of hBN forming a network of tunnel junctions, whereas the LRS contains a network of Ag filaments. The temporal avalanche dynamics in both these states exhibit power-law scaling, long-range temporal correlation, and SOC. These networks can be tuned from one to another with voltage as a control parameter. For the first time, two different neural networks are realized in a single CMOS compatible, 2D material platform.

Performance tunability of field-effect transistors using MoS2(1-x)Se2xalloys.

Ultra-thin channel materials with excellent tunability of their electronic properties are necessary for the scaling of electronic devices. Two-dimensional materials such as transition metal dichalcogenides (TMDs) are ideal candidates for this due to their layered nature and great electrostatic control. Ternary alloys of these TMDs show composition-dependent electronic structure, promising excellent tunability of their properties. Here, we systematically compare molybdenum sulphoselenide (MoS2(1-x)Se2x) alloys, MoS1Se1and MoS0.4Se1.6. We observe variations in strain and carrier concentration with their composition. Using them, we demonstrate n-channel field-effect transistors (FETs) with SiO2and high-kHfO2as gate dielectrics, and show tunability in threshold voltage, subthreshold slope (SS), drain current, and mobility. MoS1Se1shows better promise for low-power FETs with a minimum SS of 70 mV dec-1, whereas MoS0.4Se1.6, with its higher mobility, is suitable for faster operations. Using HfO2as gate dielectric, there is an order of magnitude reduction in interface traps and 2× improvement in mobility and drain current, compared to SiO2. In contrast to MoS2, the FETs on HfO2also display enhancement-mode operation, making them better suited for CMOS applications.