Oxygenated amorphous carbon for resistive memory applications.

Carbon-based electronics is a promising alternative to traditional silicon-based electronics as it could enable faster, smaller and cheaper transistors, interconnects and memory devices. However, the development of carbon-based memory devices has been hampered either by the complex fabrication methods of crystalline carbon allotropes or by poor performance. Here we present an oxygenated amorphous carbon (a-COx) produced by physical vapour deposition that has several properties in common with graphite oxide. Moreover, its simple fabrication method ensures excellent reproducibility and tuning of its properties. Memory devices based on a-COx exhibit outstanding non-volatile resistive memory performance, such as switching times on the order of 10 ns and cycling endurance in excess of 10(4) times. A detailed investigation of the pristine, SET and RESET states indicates a switching mechanism based on the electrochemical redox reaction of carbon. These results suggest that a-COx could play a key role in non-volatile memory technology and carbon-based electronics.

Selective actuation of arrays of carbon nanotubes using magnetic resonance.

We introduce the use of ferromagnetic resonance (FMR) to actuate mechanical resonances in as grown arrays of carbon nanotubes (CNTs) loaded with Ni particles (Ni-CNTs). This contactless method is closely related to the magnetic resonance force microscopy technique and provides spatial selectivity of actuation along the array. The Ni-CNT arrays are grown by chemical vapor deposition and are composed of homogeneous CNTs with uniform length (~600 nm) and almost equal diameter (~20 nm), which are loaded with Ni catalyst particles at their tips due to the tip growth mode. The vibrations of the Ni-CNTs are actuated by relying on the driving force that appears due to the FMR excited at about 2 GHz in the Ni particles (diameter ~100 nm). The Ni-CNT oscillations (frequency ~40 MHz) are detected mechanically by atomic force microscopy. The acquired oscillation images of the Ni-CNT uniform array reveal clear maxima in the spatial distribution of the oscillation amplitudes. We attribute these maxima to the "sensitive slices", i.e., the spatial regions of the Ni-CNT array where the FMR condition is met. Similar to magnetic resonance imaging, the sensitive slice is determined by the magnetic field gradient and moves along the Ni-CNT array as the applied magnetic field is ramped. Our excitation method does not require the presence of any additional microfabricated electrodes or coils near the CNTs and is particularly advantageous in cases where the traditional electrical actuation methods are not effective or cannot be implemented. The remote actuation can be effectively implemented also for arrays of other magnetic nanomechanical resonators.

Growth and characterization of horizontally suspended CNTs across TiN electrode gaps.

A technique is proposed to grow horizontal carbon nanotubes (CNTs) bridging metal electrodes and to assess their electrical properties. A test structure was utilized that allows for selective electrochemical sidewall catalyst placement. The selectivity of the technique is based on the connection of the desired metal electrodes to the silicon substrate where the potential for electrochemical deposition was applied. Control over the Ni catalyst size (15-30 nm) and density (up to 3 x 10(11) particles cm(-2)) is demonstrated. Horizontal CNTs with controlled diameter and density were obtained by CVD growth perpendicular to the sidewalls of patterned TiN electrode structures. Electrode gaps with spacings from 200 nm up to 5 microm could be bridged by both direct CNT-electrode contact and CNT-CNT entanglement. The TiN-CNT-TiN and TiN-CNT-CNT-TiN bridges were electrically characterized without any further post-growth contacting. Resistance values as low as 40 Omega were measured for the smallest gap spacing and depended mainly on the number and configuration of the CNT bridges. The proposed method could be implemented for CNT-based horizontal interconnections and be a route to make different nanoelectronic devices such as chemical and electromechanical sensors.