Carbon stock increases up to old growth forest along a secondary succession in Mediterranean island ecosystems.

The occurrence of old-growth forests is quite limited in Mediterranean islands, which have been subject to particularly pronounced human impacts. Little is known about the carbon stocks of such peculiar ecosystems compared with different stages of secondary succession. We investigated the carbon variation in aboveground woody biomass, in litter and soil, and the nitrogen variation in litter and soil, in a 100 years long secondary succession in Mediterranean ecosystems. A vineyard, three stages of plant succession (high maquis, maquis-forest, and forest-maquis), and an old growth forest were compared. Soil samples at two soil depths (0-15 and 15-30 cm), and two litter types, relatively undecomposed and partly decomposed, were collected. Carbon stock in aboveground woody biomass increased from 6 Mg ha-1 in the vineyard to 105 Mg ha-1 in old growth forest. Along the secondary succession, soil carbon considerably increased from about 33 Mg ha-1 in the vineyard to about 69 Mg ha-1 in old growth forest. Soil nitrogen has more than doubled, ranging from 4.1 Mg ha-1 in the vineyard to 8.8 Mg ha-1 in old growth forest. Both soil parameters were found to be affected by successional stage and soil depth but not by their interaction. While the C/N ratio in the soil remained relatively constant during the succession, the C/N ratio of the litter strongly decreased, probably following the progressive increase in the holm oak contribution. While carbon content in litter decreased along the succession, nitrogen content slightly increased. Overall, carbon stock in aboveground woody biomass, litter and soil increased from about 48 Mg ha-1 in the vineyard to about 198 Mg ha-1 in old growth forest. The results of this study indicate that, even in Mediterranean environments, considerable amounts of carbon may be stored through secondary succession processes up to old growth forest.

GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications.

We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.

Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices.

Single-quantum emitters are an important resource for photonic quantum technologies, constituting building blocks for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of such functions is achieved through systems that provide both strong light-matter interactions and a low-loss interface between emitters and optical fields. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we develop a heterogeneous photonic integration platform that provides such capabilities in a scalable on-chip implementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots-a mature class of solid-state quantum emitter-with low-loss Si3N4 waveguides. We demonstrate a highly efficient optical interface between Si3N4 waveguides and single-quantum dots in GaAs geometries, with performance approaching that of devices optimized for each material individually. This includes quantum dot radiative rate enhancement in microcavities, and a path for reaching the non-perturbative strong-coupling regime.Effective use of single emitters in quantum photonics requires coherent emission, strong light-matter coupling, low losses and scalable fabrication. Here, Davanco et al. stride toward this goal by hybrid on-chip integration of Si3N4 waveguides and GaAs nanophotonic geometries with InAs quantum dots.

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Cryogenic photoluminescence imaging system for nanoscale positioning of single quantum emitters.

We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4 K closed-cycle cryostat by a high numerical aperture (NA = 0.9, 100× magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locations of single InAs/GaAs quantum dots within a >50 µm × 50 µm field of view are determined with ≈4.5 nm uncertainty (one standard deviation) in a 1 s long acquisition. The uncertainty is determined through a combination of a maximum likelihood estimate for localizing the quantum dot emission, and a cross correlation method for determining the alignment mark center. This location technique can be an important step in the high-throughput creation of nanophotonic devices that rely upon the interaction of highly confined optical modes with single quantum emitters.

Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission.

Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of QDs, presenting a challenge in creating devices that exploit the strong interaction of single QDs with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single QDs with respect to alignment features with an average position uncertainty <30 nm (<10 nm when using a solid-immersion lens), which represents an enabling technology for the creation of optimized single QD devices. To that end, we create QD single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48%±5% into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50%), low multiphoton probability (g(2)(0) <1%), and a significant Purcell enhancement factor (≈3).

Spectral broadening and shaping of nanosecond pulses: toward shaping of single photons from quantum emitters.

We experimentally demonstrate spectral broadening and shaping of exponentially-decaying nanosecond pulses via nonlinear mixing with a phase-modulated pump in a periodically poled lithium niobate (PPLN) waveguide. 1550 nm pump light is imprinted with a temporal phase and used to upconvert a weak 980 nm pulse to 600 nm while simultaneously broadening the spectrum to that of a Lorentzian pulse up to 10 times shorter. While the current experimental demonstration is for spectral shaping, we also provide a numerical study showing the feasibility of subsequent spectral phase correction to achieve temporal compression and reshaping of a 1 ns mono-exponentially decaying pulse to a 250 ps Lorentzian, which would constitute a complete spectrotemporal waveform shaping protocol. This method, which uses quantum frequency conversion in PPLN with >100:1 signal-to-noise ratio, is compatible with single photon states of light.

Statistical measurements of quantum emitters coupled to Anderson-localized modes in disordered photonic-crystal waveguides.

We present a statistical study of the Purcell enhancement of the light emission from quantum dots coupled to Anderson-localized cavities formed in disordered photonic-crystal waveguides. We measure the time-resolved light emission from both single quantum emitters coupled to Anderson-localized cavities and directly from the cavities that are fed by multiple quantum dots. Strongly inhibited and enhanced decay rates are observed relative to the rate of spontaneous emission in a homogeneous medium. From a statistical analysis, we report an average Purcell factor of 4.5 ± 0.4 without applying any spectral tuning. By spectrally tuning individual quantum dots into resonance with Anderson-localized modes, a maximum Purcell factor of 23.8 ± 1.5 is recorded, which is at the onset of the strong-coupling regime. Our data quantify the potential of Anderson-localized cavities for controlling and enhancing the light-matter interaction strength in a photonic-crystal waveguide, which is of relevance for cavity quantum-electrodynamics experiments, efficient energy harvesting and random lasing.

Statistical theory of a quantum emitter strongly coupled to Anderson-localized modes.

A statistical theory of the coupling between a quantum emitter and Anderson-localized cavity modes is presented based on a dyadic Green's function formalism. The probability of achieving the strong light-matter coupling regime is extracted for an experimentally realistic system composed of InAs quantum dots embedded in a disordered photonic crystal waveguide. We demonstrate that by engineering the relevant parameters that define the quality of light confinement, i.e., the light localization length and the loss length, strong coupling between a single quantum dot and an Anderson-localized cavity is within experimental reach. As a consequence, confining light by disorder provides a novel platform for quantum electrodynamics experiments.

Cavity quantum electrodynamics with Anderson-localized modes.

A major challenge in quantum optics and quantum information technology is to enhance the interaction between single photons and single quantum emitters. This requires highly engineered optical cavities that are inherently sensitive to fabrication imperfections. We have demonstrated a fundamentally different approach in which disorder is used as a resource rather than a nuisance. We generated strongly confined Anderson-localized cavity modes by deliberately adding disorder to photonic crystal waveguides. The emission rate of a semiconductor quantum dot embedded in the waveguide was enhanced by a factor of 15 on resonance with the Anderson-localized mode, and 94% of the emitted single photons coupled to the mode. Disordered photonic media thus provide an efficient platform for quantum electrodynamics, offering an approach to inherently disorder-robust quantum information devices.