RESUMO
Thermoelectric performance in the layered Zintl phase n-type Mg3+δ (Sb,Bi)2 is reported. Insertion of the excess Mg into the compounds is crucial for realizing n-type carrier transport with multivalley and isotropic character. An excellent ZT of 1.51 ± 0.06 at 716 K is achieved in the sintered polycrystals at the composition of Mg3.2 Sb1.5 Bi0.49 Te0.01 .
RESUMO
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO3 and TiO2-terminated SrTiO3 (STO; refs 1, 2). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.
RESUMO
The photocarrier relaxation dynamics of an n-type LaAlO3/SrTiO3 heterointerface is investigated using femtosecond transient absorption (TA) spectroscopy at low temperatures. In both LaAlO3/SrTiO3 heterostructures and electron-doped SrTiO3 bulk crystals, the TA spectrum shows a Drude-like free carrier absorption immediately after excitation. In addition, a broad absorption band gradually appears within 40 ps, which corresponds to the energy relaxation of photoexcited free electrons into self-trapped polaron states. We reveal that the polaron formation time is enhanced considerably at the LaAlO3/SrTiO3 heterointerface as compared to bulk crystals. Further, we discuss the interface effects on the electron relaxation dynamics in conjunction with the splitting of the t2g subbands due to the interface potential.
RESUMO
Manipulation of magnetism is a longstanding goal of research in exotic materials. In this work, we demonstrate that the small ferromagnetic patches in LaAlO(3)/SrTiO(3) heterostructures can be dramatically changed by in situ contact of a scanning probe. Our results provide a platform for manipulation of small magnets through either a strong magneto-elastic coupling or sensitivity to surface modification. The ability to locally control magnetism is particularly interesting due to the presence of superconductivity with strong spin-orbit coupling in LaAlO(3)/SrTiO(3).
RESUMO
In LaAlO(3)/SrTiO(3) heterointerfaces, charge carriers migrate from the LaAlO(3) to the interface in an electronic reconstruction. Magnetism has been observed in LaAlO(3)/SrTiO(3), but its relationship to the interface conductivity is unknown. Here we show that reconstruction is necessary, but not sufficient, for the formation of magnetism. Using scanning superconducting quantum interference device microscopy we find that magnetism appears only above a critical LaAlO(3) thickness, similar to the conductivity. We observe no change in ferromagnetism with gate voltage, and detect ferromagnetism in a non-conducting p-type sample. These observations indicate that the carriers at the interface do not need to be itinerant to generate magnetism. The ferromagnetism appears in isolated patches whose density varies greatly between samples. This inhomogeneity strongly suggests that disorder or local strain generates magnetism in a population of the interface carriers.
