Inversion Boundaries and Phonon Scattering in Ga:ZnO Thermoelectric Compounds.

We investigated the high-temperature thermoelectric properties of Ga:ZnO bulk compounds, synthesized using a simple and scalable solid-state process. The effects of a low gallium content (x ≤ 0.04 in Zn1-xGaxO1+x/2) on the structural features and electrical/thermal properties are reviewed. Transmission electron microscopy analyses showed that 2D, nonperiodic defects had formed from a doping content as low as x = 0.01 Ga. The structural description of these nanoscale interfaces is, for the first time, carefully investigated in such low-Ga-content samples by HAADF-STEM analyses combined with structural modeling. It was found that the formation of head-to-head inversion twin (h-IT) boundaries and tail-to tail inversion boundaries (t-IB) in the bulk compounds is responsible for strong phonon scattering, while maintaining relatively good electrical conductivity and thereby enhancing the thermoelectric properties. The absolute value of the Seebeck coefficient decreases abruptly from 475 µV/K for x = 0 down to 60 µV/K for x = 0.005 at 350 K. At the same time, the electrical resistivity drops from 1 ohm cm for x = 0 to 1.7 × 10-3 ohm cm for x = 0.005. For higher Ga additions (x > 0.01), the increase in electrical resistivity is likely linked to the formation of interface defects at a larger extent in the wurtzite structure. The thermal conductivity also drops sharply with the increase in the Ga content from ∼33 W/m K for x = 0 to ∼8 for x = 0.04 at 350 K. This study is progress toward the synthesis of other thermoelectric materials where nanoscale interfaces in bulk compounds provide tremendous opportunities for further enhancing both the phonon scattering and the overall figure of merit.

Tuning the thermoelectric properties of A-site deficient SrTiO3 ceramics by vacancies and carrier concentration.

Ceramics based on Sr0.8La0.067Ti0.8Nb0.2O3-δ have been prepared by the mixed oxide route. The La1/3NbO3 component generates ∼13.4% A-site vacancies; this was fixed for all samples. Powders were sintered under air and reducing conditions at 1450 to 1700 K; products were of high density (>90% theoretical). Processing under reducing conditions led to the formation of a Ti1-xNbxO2-y second phase, core-shell structures and oxygen deficiency. X-ray diffraction (XRD) confirmed a simple cubic structure with space group Pm3[combining macron]m. Transmission electron microscopy revealed a high density of dislocations while analytical scanning transmission electron microscopy at atomic resolution demonstrated a uniform distribution of La, Nb and vacancies in the lattice. X-ray photoemission spectroscopy and thermogravimetry showed the oxygen deficiency (δ value) to be ∼0.08 in reduced samples with enhanced carrier concentrations ∼2 × 1021 cm-3. Both carrier concentration and carrier mobility increased with sintering time, giving a maximum figure of merit (ZT) of 0.25. Selective additional doping by La or Nb, with no additional A site vacancies, led to the creation of additional carriers and reduced electrical resistivity. Together these led to enhanced ZT values of 0.345 at 1000 K. The contributions from oxygen vacancies and charge carriers have been investigated independently.

Synthesis and Structural Characterization of the New Clathrates K8Cd4Ge42, Rb8Cd4Ge42, and Cs8Cd4Ge42.

This paper presents results from our exploratory work in the systems K-Cd-Ge, Rb-Cd-Ge, and Cs-Cd-Ge, which yielded the novel type-I clathrates with refined compositions K8Cd3.77(7)Ge42.23, Rb8Cd3.65(7)Ge42.35, and Cs7.80(1)Cd3.65(6)Ge42.35. The three compounds represent rare examples of clathrates of germanium with the alkali metals, where a d10 element substitutes a group 14 element. The three structures, established by single-crystal X-ray diffraction, indicate that the framework-building Ge atoms are randomly substituted by Cd atoms on only one of the three possible crystallographic sites. This and several other details of the crystal chemistry are elaborated.

Synthesis and structure determination of seven ternary bismuthides: crystal chemistry of the RELi3Bi2 family (RE = La-Nd, Sm, Gd, and Tb).

Zintl phases are renowned for their diverse crystal structures with rich structural chemistry and have recently exhibited some remarkable heat- and charge-transport properties. The ternary bismuthides RELi3Bi2 (RE = La-Nd, Sm, Gd, and Tb) (namely, lanthanum trilithium dibismuthide, LaLi3Bi2, cerium trilithium dibismuthide, CeLi3Bi2, praseodymium trilithium dibismuthide, PrLi3Bi2, neodymium trilithium dibismuthide, NdLi3Bi2, samarium trilithium dibismuthide, SmLi3Bi2, gadolinium trilithium dibismuthide, GdLi3Bi2, and terbium trilithium dibismuthide, TbLi3Bi2) were synthesized by high-temperature reactions of the elements in sealed Nb ampoules. Single-crystal X-ray diffraction analysis shows that all seven compounds are isostructural and crystallize in the LaLi3Sb2 type structure in the trigonal space group P-3m1 (Pearson symbol hP6). The unit-cell volumes decrease monotonically on moving from the La to the Tb compound, owing to the lanthanide contraction. The structure features a rare-earth metal atom and one Li atom in a nearly perfect octahedral coordination by six Bi atoms. The second crystallographically unique Li atom is surrounded by four Bi atoms in a slightly distorted tetrahedral geometry. The atomic arrangements are best described as layered structures consisting of two-dimensional layers of fused LiBi4 tetrahedra and LiBi6 octahedra, separated by rare-earth metal cations. As such, these compounds are expected to be valance-precise semiconductors, whose formulae can be represented as (RE(3+))(Li(1+))3(Bi(3-))2.

Synthesis and crystal chemistry of new ternary pnictides containing lithium--adding structural complexity one step at a time.

This study focuses on the exploration of the ternary systems A-Li-Pn with A = Ca-Ba, Eu and Yb and Pn = As-Bi resulting in the extensions of the ALiPn series (A = Ca, Sr, Eu and Yb; Pn = As-Bi; orthorhombic Pnma) with the MgSrSi structure type and of the A3Li4Pn4 family (A = Ba, Eu; Pn = As-Bi; orthorhombic Immm) with the Zr3Cu4Si4 structure type, as well as the novel compound Eu4Li7Bi6 (monoclinic, C2/m) with its own structure type. The relevant structural relationships are discussed. The building blocks and the topology of the polyanionic networks among the three different structures are compared side-by-side. Electronic band structure calculations for EuLiSb, Eu3Li4Sb4 and Eu4Li7Bi6 are discussed; the magnetic susceptibility and resistivity of single-crystalline Eu3Li4Sb4 are also presented.

On the possibility for Rb- and Eu-cation ordering in type-I clathrates: synthesis and homogeneity range of the novel compounds Rb(8-x)Eu(x)(In,Ge)46 (0.6 ≤ x ≤ 1.8).

Studies in the Rb-Eu-In-Ge system confirm the existence of the phase Rb(8-x)Eu(x)(In,Ge)46 (0.6 ≤ x ≤ 1.8), crystallizing with the cubic clathrate type-I structure. The In and Ge content can be varied, concomitant with changes in the Rb-Eu ratio. Two of the three framework sites are occupied by statistical mixtures of Ge and In atoms, while the site with the lowest multiplicity is taken by the In atoms only. Based on the three refined formulae [heptarubidium europium nonaindium heptatriacontagermanide, Rb7.39(3)Eu0.61(3)In8.88(5)Ge37.12(5), and two forms of hexarubidium dieuropium decaindium hexatriacontagermanide, Rb6.30(3)Eu1.70(3)In9.76(4)Ge36.24(4) and Rb6.24(2)Eu1.76(2)In10.16(5)Ge35.84(5)] and the explored different synthetic routes, it can be suggested that the known ternary phase Rb8In8Ge38 and the hypothetical quaternary phase Rb6Eu2In10Ge36 represent the boundaries of the homogeneity range. In the former limiting composition, both the (Ge,In)20 and the (Ge,In)24 cages are fully occupied by Rb atoms only, whereas Rb6Eu2In10Ge36 has Rb atoms encapsulated in the larger tetrakaidecahedra, with Eu atoms filling the smaller pentagonal dodecahedra. For the solid solutions Rb(8-x)Eu(x)(In,Ge)46, Rb and Eu are statistically disordered in the dodecahedral cage, and the tetrakaidecahedral cage is only occupied by Rb atoms.

Tetra-yttrium difluoride disilicate orthosilicate, Y4F2[Si2O7][SiO4].

In the crystal structure of Y4F2[Si2O7][SiO4], three fundamental building blocks are present, viz. anionic disilicate and orthosilicate units ([Si2O7](6-) and [SiO4](4-)) and cationic [F2Y4](10+) entities. The latter are built up by two [FY3](8+) triangles sharing a common edge. The four crystallographically independent Y(3+) cations display coordination numbers of eight for one and of seven for the other three cations, provided by oxide and fluoride anions. The overall arrangement of the building blocks can be considered as layer-like parallel to the ac plane.

K and Ba distribution in the structures of the clathrate compounds K(x)Ba(16-x)(Ga,Sn)136 (x = 0.8, 4.4, and 12.9) and K(x)Ba(8-x)(Ga,Sn)46 (x = 0.3).

Studies of the K-Ba-Ga-Sn system produced the clathrate compounds K(0.8(2))Ba(15.2(2))Ga(31.0(5))Sn(105.0(5)) [a = 17.0178 (4) Å], K(4.3(3))Ba(11.7(3))Ga(27.4(4))Sn(108.6(4)) [a = 17.0709 (6) Å] and K(12.9(2))Ba(3.1(2))Ga(19.5(4))Sn(116.5(4)) [a = 17.1946 (8) Å], with the type-II structure (cubic, space group Fd3m), and K(7.7(1))Ba(0.3(1))Ga(8.3(4))Sn(37.7(4)) [a = 11.9447 (4) Å], with the type-I structure (cubic, space group Pm3n). For the type-II structures, only the smaller (Ga,Sn)24 pentagonal dodecahedral cages are filled, while the (Ga,Sn)28 hexakaidecahedral cages remain empty. The unit-cell volume is directly correlated with the K:Ba ratio, since an increasing amount of monovalent K occupying the cages causes a decreasing substitution of the smaller Ga in the framework. All three formulae have an electron count that is in good agreement with the Zintl-Klemm rules. For the type-I compound, all framework sites are occupied by a mixture of Ga and Sn atoms, with Ga showing a preference for Wyckoff site 6c. The (Ga,Sn)20 pentagonal dodecahedral cages are occupied by statistically disordered K and Ba atoms, while the (Ga,Sn)24 tetrakaidecahedral cages encapsulate only K atoms. Large anisotropic displacement parameters for K in the latter cages suggest an off-centering of the guest atoms.

Tin clathrates with the type II structure.

For a very long time, Ba(16)Ga(32)Sn(104) has been the sole representative of tin clathrates with the type II structure. Herein, we present several new members of this structural family: Cs(8)Ba(16)Ga(39.7(3))Sn(96.3(3)), Rb(9.9(5))Ba(13.3(2))Ga(36.4(3))Sn(99.6(3)), and K(2.0(4))Ba(14.0(4))Ga(30.4(2))Sn(105.6(4)). The successful synthesis of these novel compounds was facilitated through the use of alkali and alkaline-earth metals, which selectively fill the available cages.