Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties.

Unabated, worldwide trends in CO2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO2 mitigating benefits of a worldwide smart grid (~ 18% reduction for the United States alone). Even state-of-the-art SiC high voltage junction devices are inefficient because of slow transition times (~ 0.5-µs) and limited switching rates at high voltage (~ 20-kHz at ≥ 15-kV) resulting from the intrinsically limited charge carrier drift speed (< 2 × 107-cm-s-1). Slow transition times and limited switch rates waste energy through transition loss and hysteresis loss in external magnetic components. Bulk conduction devices, where carriers are generated and controlled nearly simultaneously throughout the device volume, minimize this loss. Such devices are possible using below bandgap excitation of semi-insulating (SI) SiC single crystals. We explored carrier dynamics with a 75-fs single wavelength pump/supercontinuum probe and a modified transient spectroscopy technique and also demonstrated a new class of efficient, high-speed, high-gain, bi-directional, optically-controlled transistor-like power device. At a performance level six times that of existing devices, for the first time we demonstrated prototype operation at multi-10s of kW and 20-kV, 125-kHz in a bulk conduction transistor-like device using direct photon-carrier excitation with below bandgap light.

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Metallic iron for environmental remediation: learning from electrocoagulation.

The interpretation of processes yielding aqueous contaminant removal in the presence of elemental iron (e.g. in Fe(0)/H(2)O systems) is subject to numerous complications. Reductive transformations by Fe(0) and its primary corrosion products (Fe(II) and H/H(2)) as well as adsorption onto and co-precipitation with secondary and tertiary iron corrosion products (iron hydroxides, oxyhydroxides, and mixed valence Fe(II)/Fe(III) green rusts) are considered the main removal mechanisms on a case-to-case basis. Recent progress involving adsorption and co-precipitation as fundamental contaminant removal mechanisms have faced a certain scepticism. This work shows that results from electrocoagulation (EC), using iron as sacrificial electrode, support the adsorption/co-precipitation concept. It is reiterated that despite a century of commercial use of EC, the scientific understanding of the complex chemical and physical processes involved is still incomplete.

Fe0-based alloys for environmental remediation: thinking outside the box.

A review of the approach used by environmental remediation researchers to evaluate the reactivity of Fe(0)-based alloys reveals the lack of consideration of the results available from other branches of science. This paper discusses the limitations of the current approach. The discussion provided here suggests that the current assumption that redox-sensitive species serve as corrosive agents for Fe(0) maybe incorrect because water as the solvent is also corrosive. A new approach is proposed in which water is considered as the primary Fe(0) oxidizing agent and the impact of individual relevant solutes (including contaminants) should be assessed in long-term laboratory experiments. It is expected that the application of the proposed approach will help to reliably characterize the reactivity of Fe(0) materials within a few years.

Mechanism of uranium removal from the aqueous solution by elemental iron.

The effectiveness of elemental iron (Fe(0)) to remove uranium (U) from the aqueous phase has been demonstrated. While the mitigation effect is sure, discrepancies in the removal mechanism have been reported. The objective of this study was to investigate the mechanism of U(VI) removal from aqueous phases by Fe(0). For this purpose, a systematic sequence of bulk experiments was conducted to characterize the effects of the availability and the abundance of corrosion products on U(VI) removal. Results indicated that U(VI) removal reactions did not primary occur at the surface of the metallic iron. It is determined that U(VI) co-precipitation with aging corrosion products is a plausible explanation for the irreversible fixation under experimental conditions. Results of XRD analyses did no show any U phases, whereas SEM-EDX analyses showed that U tended to associate with rusted areas on the surface of Fe(0). Recovering U with different leaching solutions varied upon the dissolution capacity of the individual solutions for corrosion products, showing that the irreversibility of the removal depends on the stability of the corrosion products. U(VI) co-precipitation as removal mechanism enables a better discussion of reported discrepancies.