Plasmonic hot carrier injection from single gold nanoparticles into topological insulator Bi2Se3 nanoribbons.

Plasmonic gold nanoparticles injecting hot carriers into the topological insulator (TI) interface of Bi2Se3 nanoribbons are studied by resonant Raman spectroscopy. We resolve the impact of individual gold particles with sizes ranging from 140 nm down to less than 40 nm on the topological surface states of the nanoribbons. In resonance at 1.96 eV (633 nm), we find distinct phonon renormalization in the Eg2- and A1g2-modes that can be associated with plasmonic hot carrier injection. The phonon modes are strongly enhanced by a factor of 350 when tuning the excitation wavelengths into interband transition and in resonance with the surface plasmon of gold nanoparticles. At 633 nm wavelength, a plasmonic enhancement factor of 18 is observed indicating a contribution of hot carriers injected from the gold nanoparticles into the TI interface. Raman studies as a function of gold nanoparticle size reveal the strongest hot carrier injection for particles with size of 108 nm in agreement with the resonance energy of its surface plasmon. Hot carrier injection opens the opportunity to locally control the electronic properties of the TI by metal nanoparticles attached to the surface of nanoribbons.

Carrier Injection Observed by Interface-Enhanced Raman Scattering from Topological Insulators on Gold Substrates.

The electron-phonon interaction at the interface between topological insulator (TI), namely, Bi2Se3 and Bi2Te3 two-dimensional (2D) nanoflakes, to a gold substrate as a function of TI flake thickness is studied by means of Raman scattering. We reveal the presence of interface-enhanced Raman scattering and a strong phonon renormalization induced by carriers injected from the gold substrate to the topological surface in contact. We derive the change of the electron-phonon coupling showing a nearly linear behavior as a function of layer thickness. The strongly nonlinear change of the Raman scattering cross section as a function of flake thickness can be associated with band bending effects at the metal-TI interface. Our results provide spectroscopic evidence for a strongly modified band structure in the first few quintuple layers of Bi2Se3 and Bi2Te3 in contact with gold.

Conductance-strain behavior in silver-nanowire composites: network properties of a tunable strain sensor.

Highly flexible and conductive nano-composite materials are promising candidates for stretchable and flexible electronics. We report on the strain-resistance relation of a silver-nanowire photopolymer composite during repetitive stretching. Resistance measurements reveal a gradual change of the hysteretic resistance curves towards a linear and non-hysteretic behavior. Furthermore, a decrease in resistance and an increase in electrical sensitivity to strain over the first five stretching cycles can be observed. Sensitivity gauge factors between 10 and 500 at 23% strain were found depending on the nanowire concentration and stretching cycle. We model the electrical behavior of the investigated silver nanowire composites upon repetitive stretching considering the strain induced changes in the local force distribution within the polymer matrix and the tunnel resistance between the nanowires by using a Monte Carlo method.