RESUMO
The bulk properties of the bilayer quantum Hall state at total filling factor one have been intensively studied in experiment. Correlation induced phenomena such as Josephson-like tunneling and zero Hall resistance have been reported. In contrast, the edge of this bilayer state remains largely unexplored. Here, we address this edge physics by realizing quasiparticle tunneling across a quantum point contact. The tunneling manifests itself as a zero bias peak that grows with decreasing temperature. Its shape agrees quantitatively with the formula for weak quasiparticle tunneling frequently deployed in the fractional quantum Hall regime in single layer systems, consistent with theory. Interestingly, we extract a fractional charge of only a few percent of the free electron charge, which may be a signature of the theoretically predicted leakage between the chiral edge and the bulk mediated by gapless excitations.
RESUMO
Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate that under optimized growth stoichiometry the growth temperature is the key parameter to control its incorporation and that an increase by 55 °C leads to an oxygen reduction by one order of magnitude. Quantitatively this reduction and the resulting optical and electrical properties are analyzed by secondary ion mass spectroscopy, photoluminescence, capacitance versus voltage measurements, low temperature magneto-transport and parasitic current paths in lateral transistor test structures based on two-dimensional electron gases. At a growth temperature of 665 °C the residual charge carrier concentration is decreased to below 1015 cm-3, resulting in insulating behavior and thus making the material suitable for beyond state-of-the-art device applications.
