Monolithic radio frequency SiN x self-rolled-up nanomembrane interdigital capacitor modeling and fabrication.

Monolithic capacitors operating at radio frequencies (RF) serve as critical components in integrated circuits for wireless communication. Design and fabrication innovations for high capacitance density RF capacitors are highly desired for the miniaturization of RFIC chips. However, practical and simple solutions are limited by existing capabilities in three-dimensional (3D) structure construction and the effective configuration of electrodes. We report a unique route to achieve unprecedentedly high capacitance density at a high operating frequency through a capacitor configuration of 3D coil interdigital electrodes using planar semiconductor processing compatible materials and fabrication methods. A systematic mechanical-electrical design principle is demonstrated, and fabricated devices show a maximum 21.5 pF capacitance, which is 17.2× larger after rolling up. The corresponding capacitance density is as large as 371 pF mm-2, with resonant frequency of 1.5 GHz. The performance could be improved significantly by simply rolling up more turns with minimal change to the area footprint.

Ultra-Small, High-Frequency, and Substrate-Immune Microtube Inductors Transformed from 2D to 3D.

Monolithic on-chip inductors are key passive devices in radio frequency integrated circuits (RFICs). Currently, 70-80% of the on-wafer area of most RFIC chips is occupied by the sprawling planar spiral inductors, and its operation frequency is limited to a few GHz. With continuous scaling of the transistor technology, miniaturization and high frequency operation of inductors have become the bottleneck to meet future demands of wireless communication systems. Here we report on-chip self-rolled-up 3D microtube inductors with extremely small footprint, unprecedented high frequency performance and weak dependence on substrate conductivity. The serpentine metal strips are deposited on an oppositely strained silicon nitrides (SiNx) bilayer. After releasing from the sacrificial layer underneath, the metal/SiNx layer is scrolled into a 3D hollow tubular structure by the strain induced unidirectional self-rolled-up technology. Compared to the planar spiral inductors with similar inductances and quality (Q) factors, the footprint of tube inductors is reduced by as much as two orders of magnitude, and the frequency at peak Q factor improves more than 5 times on doped substrates. The self-rolled-up 3D nanotechnology platform employed here, that "processes in 2D but functions in 3D", is positioned to serve as a global solution for extreme RFIC miniaturization with improved performance.