RESUMO
The new thioapatite Ba5(VO4-αSα)3X (X = F, Cl, I) series of compounds was prepared and characterized. Compared to known apatite phases built from unconnected vanadate VO4 groups separated by Ba2+ cations delimiting halide-filled channels, their crystal structure is built from mixed anion thiovanadate VO4-αSα, where V5+ is surrounded by both O and S, therefore exhibiting a triple anion lattice. Here, the strategy consisting in incorporating a chalcogenide anion aims at raising the valence band to bring the band gap to the visible range in order to reach photoactive materials under visible light. Both the halide anion nature and the S/O ratio impact the materials' photoconductivity. While the photocurrent response is comparable to that found in the recently investigated apatite phase Pb5(VO4)3I, a short carrier lifetime is detected as well as a shift of the activity toward the visible light. This apatite series combining thiovanadate and halide-filled channels opens new perspectives in the extended field of apatites and their applications.
RESUMO
We present the results of synchrotron X-ray diffraction (XRD) measurements on powdered single-crystal samples of BaFe(2-x)Ru(x)As2, as a function of Ru content, and as a function of temperature, across the spin-density wave transition in BaFe(1.9)Ru(0.1)As2. The Rietveld refinements reveal that with Ru substitution, while the a-axis increases, the c-axis decreases. In addition, the variation of positional coordinates of As (z(As)), the Fe-As bond length and the As-Fe-As bond angles have also been determined. In the sample with x = 0.1, temperature-dependent XRD measurements indicate that the orthorhombicity shows the characteristic increase with a decrease in temperature, below the magnetic transition. It is seen that the c-axis, the As-Fe-As bond angles, Fe-As bond length and positional coordinates of the As show definite anomalies close to the structural transition. The observed anomalies in structural parameters are analysed in conjunction with restricted geometric optimization of the structure using ab initio electronic structure calculations.
